本文關(guān)鍵詞： 銅線鍵合 界面特性 強(qiáng)度演變 銅線懸臂鍵合　出處：《中南大學(xué)》2012年碩士論文　論文類型：學(xué)位論文

【摘要】：本論文以銅線鍵合為研究對象,觀察了鍵合界面微觀界面特性,確定了鍵合界面化合物成分,分析了鍵合界面化合物形成機(jī)理,探索了銅線鍵合過程中鍵合溫度、鍵合超聲能量、芯片鋁膜厚度對鍵合強(qiáng)度的影響,針對銅線鍵合在芯片懸臂鍵合過程中存在著大沖擊、大回彈的動態(tài)特性和銅線鍵合點低強(qiáng)度的問題,提出了使用2.8μm厚度鋁膜芯片代替1.0μm厚度鋁膜芯片的方法。 研究工作主要包括以下幾個部分： 1.通過Cu線鍵合界面的HRTEM測試結(jié)果分析,銅線鍵合溫度升高到340℃才出現(xiàn)Cu-Al金屬間化合物,同時X射線衍射分析結(jié)果顯示Cu-Al界面生成了CuA12、Cu9A14。Cu-Al金屬間化合物CuAl2、Cu9A14生成后,鍵合強(qiáng)度明顯增強(qiáng)。 2.試驗研究了鍵合溫度、超聲能量、鋁膜厚與鍵合強(qiáng)度的演變規(guī)律：隨著鍵合溫度升高到340℃,鍵合界面的韌窩區(qū)更明顯,鍵合更充分,鍵合強(qiáng)度更高；超聲電信號能量為5mJ左右時銅線鍵合強(qiáng)度最佳,而過低或者過高的超聲電信號能量都會導(dǎo)致銅線鍵合強(qiáng)度降低；鍵合芯片覆蓋2.8μm厚鋁膜能有效的降低芯片的硬度值,保證銅線鍵合更充分,提升銅線鍵合質(zhì)量。 3.針對銅線懸臂鍵合工藝存在著大沖擊、大回彈的動態(tài)特性和銅線鍵合點低強(qiáng)度的問題,提出了增厚鋁膜的方法。比較了2.81μm鋁膜厚度芯片與1.0μm鋁膜厚度芯片的動態(tài)特性和鍵合強(qiáng)度,實驗證明提高鋁膜厚度改善了銅線懸臂鍵合的撓度沖擊,從而增強(qiáng)了銅線懸臂鍵合強(qiáng)度。
[Abstract]:In this paper, copper wire bonding is taken as the research object, the microstructure of bonding interface is observed, the composition of bonding interface compound is determined, and the formation mechanism of bonding interface compound is analyzed. The effects of bonding temperature, bonding ultrasonic energy and thickness of aluminum film on bonding strength during copper wire bonding were investigated, and the impact of copper wire bonding on the chip cantilever bonding process was studied. The dynamic characteristics of large springback and the problem of low strength of copper wire bonding point are discussed. A method of replacing 1.0 渭 m thick aluminum film chip with 2.8 渭 m thick aluminum film chip is proposed. The research mainly includes the following parts: 1. Through the HRTEM analysis of Cu wire bonding interface, it is found that the copper wire bonding temperature rises to 340 鈩，

本文編號：1475472