本文選題：相變存儲(chǔ)器　切入點(diǎn)：五層非對(duì)稱結(jié)構(gòu)存儲(chǔ)單元　出處：《華中科技大學(xué)》2012年碩士論文

【摘要】：相變存儲(chǔ)器PCRAM(phase change random access memory)是一種以硫系化合物為存儲(chǔ)介質(zhì)的隨機(jī)存儲(chǔ)器。其利用電能使材料在晶態(tài)和非晶態(tài)之間相互變換實(shí)現(xiàn)數(shù)據(jù)的寫入與擦除。相比現(xiàn)存的其他類型存儲(chǔ)器，相變存儲(chǔ)器具有非易失性、循環(huán)壽命長、元件尺寸小、功耗低、多級(jí)存儲(chǔ)特點(diǎn)，在數(shù)據(jù)讀寫速度可擦寫次數(shù)讀取方式工作電壓以及工藝兼容性等各項(xiàng)性能指標(biāo)上有著獨(dú)特的優(yōu)勢(shì)�；谄涓鞣矫鎯�(yōu)勢(shì)，相變存儲(chǔ)器被認(rèn)為是下一代存儲(chǔ)器的主流產(chǎn)品。 PCRAM的研究過程中遇到的最大問題便是操作電流過大。為了改善寫信息脈沖電流過高制約相變隨機(jī)存儲(chǔ)器實(shí)用化的狀況，，本文在運(yùn)用有限元分析軟件ANSYS模擬計(jì)算和對(duì)比了傳統(tǒng)T型結(jié)構(gòu)和非對(duì)稱結(jié)構(gòu)的熱學(xué)性能和電學(xué)性能之后，得到非對(duì)稱結(jié)構(gòu)的寫電流要優(yōu)于前者的結(jié)論。在此基礎(chǔ)上本文設(shè)計(jì)相變存儲(chǔ)器五層非對(duì)稱結(jié)構(gòu)的基本單元，運(yùn)用光刻、濺射以及剝離等工藝實(shí)現(xiàn)了器件單元的制備。 測試結(jié)果表明，采用光刻、濺射以及剝離等工藝制備的相變存儲(chǔ)器五層非對(duì)稱結(jié)構(gòu)單元導(dǎo)通且能反復(fù)擦寫，I-V特性曲線表明發(fā)生了相變，很好的滿足了相變存儲(chǔ)器的重要性能參數(shù)。另外，分別對(duì)單元的第二層、第三層膜厚和非對(duì)稱位移量對(duì)單元寫電流的性能影響進(jìn)行研究，得到相對(duì)有利于降低存儲(chǔ)器寫電流的非對(duì)稱結(jié)構(gòu)。
[Abstract]:Phase change memory (PCRAM(phase change random access memory) is a random access memory in which sulfur compounds are used as storage media. It uses electrical energy to transform materials between crystalline and amorphous states to write and erase data. Phase change memory has the characteristics of non-volatile, long cycle life, small element size, low power consumption, multilevel storage, and high speed in data reading and writing. Erasable number of times? How to read? Because of its advantages, phase change memory is considered as the main product of next generation memory. The biggest problem encountered in the research of PCRAM is that the operating current is too large. In order to improve the condition that the pulse current of writing information is too high to restrict the application of phase-change random access memory, In this paper, the thermal and electrical properties of traditional T-type structures and asymmetric structures are simulated and compared by using finite element analysis software ANSYS. Based on the conclusion that the write current of asymmetric structure is superior to that of the former, the basic elements of phase change memory (PCM) five-layer asymmetric structure are designed in this paper. The fabrication of device cells is realized by photolithography, sputtering and stripping techniques. The experimental results show that the phase change memory (PCM), which is fabricated by photolithography, sputtering and peeling, can be switched on and can repeatedly erase the I-V characteristic curve of phase change memory. In addition, the effects of the second layer, the third layer thickness and the asymmetric displacement on the performance of the cell write current are studied. An asymmetric structure is obtained which is relatively conducive to reducing the write current of the memory.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2012
【分類號(hào)】：TP333

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