本文選題：憶阻器　切入點：阻變存儲器　出處：《國防科技》2016年06期 　論文類型：期刊論文

【摘要】：在納米電子器件時代,來自量子隧穿和電容耦合等問題的挑戰(zhàn),使得Flash半導(dǎo)體存儲器的發(fā)展遇到瓶頸。阻變存儲器是憶阻器在二值情況下的特殊應(yīng)用,因其結(jié)構(gòu)簡單、高密度、高速、低功耗、與CMOS工藝兼容以及具備三維集成能力,成為最具發(fā)展?jié)摿Φ南乱淮且资Т鎯夹g(shù)之一。在國內(nèi)外學(xué)者的共同努力下,阻變存儲器的研究已經(jīng)取得了諸多突破性的進展。本文主要綜述阻變存儲器的發(fā)展歷程、材料體系和阻變機理,并總結(jié)展望了阻變存儲器進一步發(fā)展的優(yōu)勢和面臨的挑戰(zhàn)。
[Abstract]:In the era of nanoscale electronic devices, the challenges of quantum tunneling and capacitive coupling make the development of Flash semiconductor memory meet the bottleneck. Resistive memory is a special application in binary case, because of its simple structure and high density. High speed, low power consumption, compatible with CMOS process and the ability of 3D integration, become one of the most promising next generation non-volatile memory technologies. Many breakthroughs have been made in the research of resistive memory. In this paper, the development history, material system and mechanism of resistive memory are reviewed, and the advantages and challenges of the further development of resistive memory are summarized.
【作者單位】： 中國科學(xué)院微電子器件與集成技術(shù)重點實驗室;國防科技大學(xué)電子科學(xué)與工程學(xué)院;
【分類號】：TP333
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本文編號：1600494