【摘要】：本文以電子行業(yè)廣泛使用的超高純?yōu)R射靶材Al-0.5%Cu合金為研究對(duì)象,采用不同退火工藝以改善Al-0.5%Cu合金的微觀組織從而優(yōu)化靶材性能。對(duì)冷軋90%變形量的超高純Al-0.5%Cu采用慢速升溫(空氣爐)和快速升溫(油浴)兩種退火工藝進(jìn)行退火,退火溫度為200℃-300℃,退火時(shí)間為2.5min-80min。通過電子通道襯度像(ECC)、電子背散射衍射技術(shù)(EBSD),X射線衍射(XRD)結(jié)合顯微硬度等綜合分析手段,研究了不同退火工藝對(duì)超高純Al-0.5%Cu合金靶材再結(jié)晶溫度、微觀組織和再結(jié)晶行為的影響。本論文的主要結(jié)論如下:①快速升溫退火再結(jié)晶溫度為225℃,慢速升溫退火再結(jié)晶溫度為250℃�？焖偕郎赝嘶鹉軌蚪档统呒傾l-0.5%Cu的再結(jié)晶溫度。②升溫速率影響再結(jié)晶晶粒尺寸和織構(gòu):慢速升溫退火再結(jié)晶晶粒平均尺寸為23.7±17.5μm,而快速升溫退火為18.6±13.7μm,快速升溫退火細(xì)化再結(jié)晶晶粒,使晶粒分布更細(xì)小均勻;快速升溫退火形成隨機(jī)織構(gòu)。③慢速升溫退火再結(jié)晶激活能為81.31 KJ/mol,快速升溫退火再結(jié)晶激活能為64.26 KJ/mol,快速升溫退火降低超高純Al-0.5%Cu的再結(jié)晶激活能。④慢速升溫退火工藝制度應(yīng)采用250℃-80min,快速升溫退火采用225℃-80min。
[Abstract]:In this paper, the ultrahigh purity sputtering target Al-0.5%Cu alloy widely used in electronic industry is studied. Different annealing processes are used to improve the microstructure of Al-0.5%Cu alloy and optimize the properties of the target. The ultra-high purity Al-0.5%Cu with 90% deformation of cold rolling was annealed by two kinds of annealing processes: slow heating (air furnace) and rapid heating (oil bath). The annealing temperature was 200 鈩，

本文編號(hào)：2261496