發(fā)布時間：2018-10-05 20:17

【摘要】：通過電導率測量、金相觀察、掃描電鏡分析(SEM)和X線衍射分析(XRD),研究Si和Cu對Al-Si系合金晶格常數(shù)和電性能的影響規(guī)律。研究結(jié)果表明:隨著Si和Cu質(zhì)量分數(shù)的增大,Al基體晶格畸變程度增大,Al-Si合金電導率下降;Cu對Al-Si合金電導率的影響比Si對合金電導率的影響顯著;經(jīng)過450℃×5 h+250℃×2 h熱處理工藝,Al基體晶格畸變程度明顯降低,Al-Si合金電導率明顯提高,增幅最高可達32.36%;Si和Cu對Al-Si合金電導率的影響機制不同,Si質(zhì)量分數(shù)的變化對Al基體晶格畸變程度影響較小,Si對Al-Si合金電導率的影響可依據(jù)復(fù)合材料電阻率計算公式推導,而Cu的影響可根據(jù)Al晶格常數(shù)偏離量來推導。
[Abstract]:The effects of Si and Cu on the lattice constants and electrical properties of Al-Si alloys were studied by means of conductivity measurement, metallographic observation, scanning electron microscopy (SEM) and X-ray diffraction (XRD),) analysis. The results show that with the increase of mass fraction of Si and Cu, the lattice distortion degree of Al matrix increases and the conductivity of Al-Si alloy decreases. The effect of Cu on the conductivity of Al-Si alloy is more significant than that of Si on the conductivity of Al-Si alloy. After 450 鈩，

本文編號：2254736