本文選題：鉬圓片　切入點：鎳薄膜　出處：《武漢科技大學》2016年碩士論文

【摘要】：鉬及鉬合金具有良好的導電導熱性、低熱膨脹系數(shù)、高溫強度和耐磨損等特性,使其在宇航、電子、化工等領域廣泛應用。但是鉬的抗氧化能力很差,容易在空氣中氧化,且生成的氧化物無法對鉬起到任何保護作用。鉬表面鍍一層鎳薄膜能夠有效的起到保護作用,能夠增強表面抗氧化以及耐蝕性等。目前,在鉬圓片表面鍍鎳膜主要有電鍍和化學鍍,但其使用到的化學液對環(huán)境會產生污染,且鍍覆過程穩(wěn)定性較差。利用磁控濺射技術在鉬圓片表面制備鎳薄膜,過程穩(wěn)定、安全無污染,適當工藝參數(shù)下制得的薄膜結構性能優(yōu)異。本文研究了濺射功率、濺射氣壓、負偏壓、沉積時間和沉積溫度對鉬圓片表面磁控濺射鍍鎳薄膜的影響,通過熒光測厚儀、百格法、掃描電鏡、X射線衍射儀、平面度儀以及電化學工作站等手段對鍍鎳樣品的形貌、結構及性能進行觀察分析。結果表明:最佳磁控濺射鍍鎳薄膜工藝參數(shù)為:濺射功率1.8KW,濺射氣壓0.3Pa,負偏壓450V,沉積溫度200℃,沉積時間10min。此工藝下鎳膜厚度為1.15um左右;薄膜與基體緊密連接,薄膜表面平整、連續(xù)、致密,表面起伏高度基本都在0.1μm左右;晶粒沿(111)晶面擇優(yōu)生長;相比未鍍基片,最佳工藝參數(shù)鍍鎳樣品的自腐蝕電流降低了一個數(shù)量級。針對鉬圓片表面鍍大膜厚(2μm以上)鎳膜的薄膜附著力極差的問題,通過實驗得到:對濺射鍍鎳樣品進行氫氣氣氛下850℃,保溫1h的熱處理過程,鍍層與基體會發(fā)生互相擴散滲透在界面處形成擴散層而明顯增大薄膜的附著力。目前,該磁控濺射鍍鎳鉬圓片已成功代替電鍍鎳鉬圓片應用在晶閘管等電子器件上,并取得良好的應用效果。
[Abstract]:Molybdenum and molybdenum alloys have good thermal conductivity, low thermal expansion coefficient, high temperature strength and wear resistance, which make them widely used in aerospace, electronics, chemical industry and other fields.But molybdenum has poor oxidation resistance and is easy to be oxidized in air.Nickel coating on molybdenum surface can effectively protect the surface from oxidation and corrosion resistance.At present, there are mainly electroplating and electroless plating on the surface of molybdenum wafer, but the electroless solution will pollute the environment, and the stability of the plating process is poor.Nickel thin films were prepared on molybdenum wafer by magnetron sputtering technique. The process was stable, safe and pollution-free, and the structure and properties of the films were excellent under appropriate process parameters.The effects of sputtering power, sputtering pressure, negative bias voltage, deposition time and deposition temperature on nickel film deposited on the surface of molybdenum wafer by magnetron sputtering were studied.The morphology, structure and properties of nickel plating samples were observed and analyzed by means of flatness meter and electrochemical workstation.The results show that the optimum technological parameters are as follows: sputtering power 1.8 KW, sputtering pressure 0.3 Pa, negative bias voltage 450 V, deposition temperature 200 鈩，

本文編號：1710830