鈍化時(shí)間對Fe30Mn9Al合金鈍化膜半導(dǎo)體特性影響
發(fā)布時(shí)間:2019-04-28 14:37
【摘要】:運(yùn)用電化學(xué)陽極鈍化技術(shù)對Fe30Mn9Al合金在1 mol/L Na_2SO_4溶液中進(jìn)行不同時(shí)間的表面鈍化處理;利用俄歇電子能譜(AES)、X射線光電子能譜(XPS)表面分析技術(shù)及Mott-Schottky曲線測試技術(shù)研究鈍化時(shí)間對Fe30Mn9Al合金鈍化膜的組成結(jié)構(gòu)與半導(dǎo)體特性的影響。結(jié)果表明:Fe30Mn9Al合金在1 mol/L Na_2SO_4溶液中鈍化15 min所得鈍化膜分為內(nèi)外2層,外層具有n型半導(dǎo)體特征,由Fe_2O_3、Al_2O_3、Mn_2O_3、FeOOH和AlOOH組成,內(nèi)層具有p型半導(dǎo)體特征,由MnO組成。隨著鈍化時(shí)間由15 min增至5 h,鈍化膜中的MnO溶解,Mn含量降低,Fe、Al填充Mn留下的空位在膜內(nèi)富集,Fe、Al氧化物轉(zhuǎn)變?yōu)镕e、Al氫氧化物,鈍化膜由FeOOH、AlOOH和Mn_2O_3組成,具有n型半導(dǎo)體特征。與鈍化15 min所得鈍化膜相比,鈍化5 h所得鈍化膜的施主濃度ND由2.58′10~(21) cm~(-3)降至1.96′10~(21) cm~(-3),平帶電位Efb由 283 mV降至 366 mV,鈍化膜的保護(hù)性能提高。
[Abstract]:The surface passivation of Fe30Mn9Al alloy in 1 mol/ L Na _ 2SO _ 4 solution was carried out by electrochemical anodic passivation technique, and Auger electron spectroscopy (AES) was used. The effect of passivation time on the composition and semiconductor properties of the passivation film of Fe30Mn9Al alloy was studied by X-ray photoelectron spectroscopy (XPS) surface analysis technique and the Mott-Schottky curve test technique. The results show that the passivation film of Fe30Mn9Al alloy in 1 mol/ L Na _ 2SO _ 4 solution for 15 min is divided into inner and outer layers, and the outer layer has n-type semiconductor features, and consists of Fe _ 2O _ 3, Al _ 2O _ 3, Mn _ 2O _ 3, FeOOH and AlOOH, and the inner layer has p-type semiconductor features and is composed of MnO. As the passivation time is increased from 15 min to 5 h, the MnO in the passivation film is dissolved, the Mn content is reduced, and the vacancies left by the Fe and Al filled Mn are enriched in the film, and the Fe and Al oxide are converted into Fe and Al hydroxide, and the passivation film is composed of FeOOH, AlOOH and Mn _ 2O _ 3, and has an n-type semiconductor feature. 涓庨挐鍖,
本文編號:2467712
[Abstract]:The surface passivation of Fe30Mn9Al alloy in 1 mol/ L Na _ 2SO _ 4 solution was carried out by electrochemical anodic passivation technique, and Auger electron spectroscopy (AES) was used. The effect of passivation time on the composition and semiconductor properties of the passivation film of Fe30Mn9Al alloy was studied by X-ray photoelectron spectroscopy (XPS) surface analysis technique and the Mott-Schottky curve test technique. The results show that the passivation film of Fe30Mn9Al alloy in 1 mol/ L Na _ 2SO _ 4 solution for 15 min is divided into inner and outer layers, and the outer layer has n-type semiconductor features, and consists of Fe _ 2O _ 3, Al _ 2O _ 3, Mn _ 2O _ 3, FeOOH and AlOOH, and the inner layer has p-type semiconductor features and is composed of MnO. As the passivation time is increased from 15 min to 5 h, the MnO in the passivation film is dissolved, the Mn content is reduced, and the vacancies left by the Fe and Al filled Mn are enriched in the film, and the Fe and Al oxide are converted into Fe and Al hydroxide, and the passivation film is composed of FeOOH, AlOOH and Mn _ 2O _ 3, and has an n-type semiconductor feature. 涓庨挐鍖,
本文編號:2467712
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