【摘要】：銦是一種稀有金屬,由于具有優(yōu)良的物理化學(xué)性能和機(jī)械性能被廣泛應(yīng)用于制造ITO靶材和電子行業(yè)。銦中的雜質(zhì)元素的含量影響其純度,進(jìn)而影響純銦的應(yīng)用。隨著半導(dǎo)體行業(yè)的快速發(fā)展,對高純金屬銦的要求也越來越高。因此對銦材料中雜質(zhì)元素含量快速準(zhǔn)確測定的研究日益引起人們的重視。本文綜述了銦的性質(zhì)、用途以及銦中雜質(zhì)元素的分析檢測方法等。以高純銦絲為基體材料,提出了采用在銦基體中加入高純金屬雜質(zhì)的方法制備實(shí)驗(yàn)室質(zhì)控樣品。制備質(zhì)控樣品的實(shí)驗(yàn)研究,分別考察了溫度、加熱攪拌時(shí)間、冷卻攪拌時(shí)間等參數(shù)對銦摻雜雜質(zhì)均勻性的影響,得到了制備實(shí)驗(yàn)室質(zhì)控樣品最合適的工藝條件:溫度為280℃、加熱攪拌時(shí)間3 h、冷卻攪拌時(shí)間6 min。針對實(shí)驗(yàn)室質(zhì)控樣品均勻性研究的測試方法-輝光放電質(zhì)譜(GD-MS)法進(jìn)行條件優(yōu)化,考察了放電電流、放電氣體流量、預(yù)濺射時(shí)間、分辨率等因素的影響,得到了儀器最佳優(yōu)化條件。采用F檢驗(yàn)法對均勻性測試數(shù)據(jù)進(jìn)行統(tǒng)計(jì)分析,計(jì)算得到F值,Al、Fe、Cu、Zn的F值分別為3.27、90、3.98、56.82,均大于臨界值2.77,由此判斷這些元素在銦基體中是不均勻的;Ag、Cd、Sn、Sb、Pb、Bi的F值分別為2.74、0.82、2.26、0.28、2.75、2.65,均小于臨界值2.77,表明這些元素在銦基體中分別相對均勻。利用電感耦合等離子體原子發(fā)射光譜儀(ICP-AES)對實(shí)驗(yàn)室質(zhì)控樣品進(jìn)行定值研究,并進(jìn)行了 ICP-AES法分析譜線的選擇、儀器工作條件優(yōu)化、標(biāo)液匹配基體與否的影響、精密度和準(zhǔn)確度等條件實(shí)驗(yàn)。根據(jù)Ag、Cd、Sn、Sb、Pb、Bi六個(gè)元素的定值結(jié)果,計(jì)算得到其相對靈敏度因子(RSF),分別為0.79、0.60、1.33、0.88、1.97、0.62,與GD-MS儀器內(nèi)置相對靈敏度因子進(jìn)行比較,Sn、Pb這兩個(gè)元素相差2.5倍以內(nèi),Ag、Cd、Sb、Bi這四個(gè)元素分別相差3～4倍,表明銦基體對雜質(zhì)元素的測定結(jié)果有較大影響。
[Abstract]:Indium is a rare metal, which is widely used in the manufacture of ITO targets and electronics because of its excellent physical and chemical properties and mechanical properties. The content of impurity elements in indium affects its purity and the application of pure indium. With the rapid development of semiconductor industry, the requirement of high-purity indium is becoming higher and higher. Therefore, rapid and accurate determination of impurity elements in indium materials has attracted more and more attention. The properties, applications and analytical methods of impurity elements in indium are reviewed in this paper. High purity indium wire was used as matrix material to prepare laboratory quality control samples by adding high purity metal impurities into indium matrix. The effects of temperature, heating agitation time and cooling stirring time on the homogeneity of indium doped impurity were investigated. The most suitable process conditions for the preparation of quality control samples were obtained as follows: temperature 280 鈩，

本文編號：2202619