本文選題：CMP + 化學(xué)反應(yīng)活化能　； 參考：《摩擦學(xué)學(xué)報(bào)》2017年03期

【摘要】：基于靜態(tài)腐蝕試驗(yàn)和Arrhenius公式,探討了緩蝕劑1,2,4-三唑在銅晶圓表面的吸附機(jī)制,分析了其對(duì)銅晶圓表面化學(xué)反應(yīng)活化能的影響;結(jié)合CMP試驗(yàn),闡釋了BTA和1,2,4-三唑兩種緩蝕劑對(duì)CMP材料去除速率的影響.結(jié)果表明:在酸性拋光液中,緩蝕劑1,2,4-三唑主要存在兩種緩蝕機(jī)制:一是在銅表面形成吸附膜Cu:(1,2,4-TAH)_(ads),二是形成聚合物膜Cu(1,2,4-TA)_2.CMP過(guò)程中化學(xué)反應(yīng)活化能的降低量不隨拋光液中1,2,4-三唑的含量而變化.但是相對(duì)于BTA,使用含有1,2,4-三唑的拋光液時(shí)CMP過(guò)程中晶圓表面的化學(xué)反應(yīng)活化能降低量較大,表明機(jī)械促進(jìn)化學(xué)作用較強(qiáng).本研究結(jié)果為CMP過(guò)程中拋光液的優(yōu)化提供了理論支撐.
[Abstract]:Based on the static corrosion test and Arrhenius formula, the adsorption mechanism of corrosion inhibitor 1t2O4- triazole on the surface of copper wafer was discussed, and its effect on the activation energy of chemical reaction on the surface of copper wafer was analyzed. The effects of two corrosion inhibitors, BTA and 1 ~ 2H _ 4-triazole, on the removal rate of CMP materials were explained. The results show that in acid polishing solution, There are two kinds of corrosion inhibition mechanisms of corrosion inhibitor 1: 1) the adsorption film Cu1: 1 / 1 / 4-TAH4-TAH4-triazole is formed on the surface of copper. The second is that the reduction of the activation energy of chemical reaction does not change with the content of 1222 / 4- triazole in the polishing solution during the process of forming polymer membrane Cu1-2 + 2-TA2-TA2-TA2. CMP. However, compared with BTAs, the chemical activation energy of the wafer surface in the process of CMP using the polishing liquid containing 1k2m4- triazole is reduced by a large amount, which indicates that the mechanically promoted chemistry is stronger. The results provide theoretical support for the optimization of polishing solution in CMP process.
【作者單位】： 中國(guó)石油大學(xué)(華東)機(jī)電工程學(xué)院;清華大學(xué)摩擦學(xué)國(guó)家重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家自然科學(xué)基金項(xiàng)目(51405511) 中央高校基本科研業(yè)務(wù)費(fèi)專(zhuān)項(xiàng)資金(16CX02005A)資助~~
【分類(lèi)號(hào)】：TG174.42

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本文編號(hào)：1920943