取向銅、鎳鍍層對(duì)鍵合界面反應(yīng)的影響
發(fā)布時(shí)間：2019-03-29 13:04
【摘要】：隨著微電子產(chǎn)品向高密度、窄間距、短路徑的趨勢(shì)發(fā)展,應(yīng)用于三維疊層封裝的互連焊點(diǎn)尺寸也顯著減小。銅凸點(diǎn)由于具有良好機(jī)械性能和電學(xué)性能,被認(rèn)為可代替?zhèn)鹘y(tǒng)的焊球微凸點(diǎn),用于細(xì)節(jié)距高深寬比的高密度封裝技術(shù)中。在微小化條件下,單個(gè)凸點(diǎn)所含晶粒減少導(dǎo)致其晶體學(xué)取向?qū)︽I合界面反應(yīng)的影響愈發(fā)明顯,顯著影響界面金屬間化合物的形核與生長(zhǎng)。目前對(duì)于晶體學(xué)取向?qū)︽I合界面反應(yīng)的影響的研究多基于單晶基板,而單晶基板的制作不易、成本高昂,實(shí)際應(yīng)用中多應(yīng)用電沉積多晶凸點(diǎn)。因此,明確電沉積工藝參數(shù)對(duì)于鍍層擇優(yōu)取向的影響以及鍍層織構(gòu)對(duì)于界面金屬間化合物生長(zhǎng)的影響有著深刻的意義。為此,本課題探究鍍液添加劑、電流密度、脈沖電鍍等對(duì)于薄膜晶向擇優(yōu)性的影響。通過電沉積制備出具有兩種不同擇優(yōu)取向的銅薄膜和鎳薄膜,觀察和研究不同擇優(yōu)取向銅和錫及鎳和錫的鍵合界面反應(yīng),系統(tǒng)研究了鍍層晶體學(xué)擇優(yōu)取向?qū)饘匍g化合物生長(zhǎng)的影響。在電沉積過程中,通過控制添加劑、電流密度、電源類型等電沉積條件可以獲得具有特定擇優(yōu)取向的銅薄膜和鎳薄膜。添加劑P-68使得銅薄膜擇優(yōu)取向明顯表現(xiàn)為(220)方向。隨著電流密度的升高,鎳薄膜晶粒擇優(yōu)取向由(111)方向逐漸轉(zhuǎn)為(200)方向。在直流條件下鎳薄膜(200)晶面表現(xiàn)為明顯的擇優(yōu)取向,脈沖條件下使(111)晶面開始表現(xiàn)出一定的擇優(yōu)性。原子在不同晶面擴(kuò)散系數(shù)不同,當(dāng)鍍層取向存在擇優(yōu)性時(shí),原子在其中的擴(kuò)散也表現(xiàn)出各向異性。加之與固-液反應(yīng)(回流)相比,決定固-固界面反應(yīng)(時(shí)效)速率及生成物形貌的是反應(yīng)原子的擴(kuò)散速率。由于原子的擴(kuò)散速率具有各向異性,因此在擇優(yōu)取向不同的鍍層中具有不同的擴(kuò)散速率,從而影響了界面反應(yīng)產(chǎn)物的形貌和生長(zhǎng)速率。(200)晶面上的原子排列比(220)晶面更為密排,因而原子在(200)晶面擴(kuò)散更困難,擴(kuò)散系數(shù)小于其在(220)晶面。Cu(200)-Sn界面處IMCs晶粒存在明顯的小刻面,小刻面呈不同角度排列形成多邊形花紋,且在晶粒間形成細(xì)小的孔,而在Cu(220)-Sn界面并未有類似現(xiàn)象。Cu3Sn優(yōu)先形核與Cu(220)-Cu6Sn5界面,在晶界處存在優(yōu)先形核長(zhǎng)大的現(xiàn)象。Ni(220)-Sn界面處形成厚度相同大小不一的薄片狀I(lǐng)MCs,而Ni(200)-Sn界面處的IMCs則呈等軸塊狀且晶粒大小均勻。Ni(220)-Sn界面薄片狀I(lǐng)MCs中Ni/Sn原子比大于Ni(200)-Sn界面處的IMCs,時(shí)效反應(yīng)充分進(jìn)行時(shí),兩種IMCs中的Ni/Sn原子比例均發(fā)生變化達(dá)到3:4,即形成常見的鎳錫金屬間化合物Ni3Sn4。長(zhǎng)時(shí)間時(shí)效,IMCs層持續(xù)生長(zhǎng),不斷地消耗中間的錫鍍層生成大塊狀金屬間化合物,甚至可以消耗區(qū)別Sn層從而貫穿整個(gè)界面,此時(shí)Ni(220)-Sn界面處的IMCs組織松散出現(xiàn)孔洞與裂縫,這將影響鍵合界面的機(jī)械性能和電學(xué)性能。
[Abstract]:With the development of micro-electronic products to high density, narrow spacing and short path, the size of interconnect solder joint used in 3D laminated packaging also decreases significantly. Due to its good mechanical and electrical properties, copper bump is considered to be a substitute for traditional solder ball micro-bumps, which can be used in high-density packaging technology with the aspect ratio of detail distance to depth. Under the condition of miniaturization, the crystal orientation of a single convex point has a more and more obvious effect on the interfacial reaction and the nucleation and growth of intermetallic compounds at the interface are greatly affected by the decrease of the grain content in the single convex point. At present, the research on the effect of crystallographic orientation on bonding interface reaction is mostly based on single crystal substrate. However, the fabrication of single crystal substrate is not easy and the cost is high. In practical application, polycrystalline convex points should be deposited by electrodeposition. Therefore, it is of great significance to clarify the effect of electrodeposition process parameters on the preferred orientation of the coating and the effect of the coating texture on the growth of intermetallic compounds at the interface. In this paper, the effects of bath additives, current density and pulse plating on the orientation selection of thin films were investigated. Copper and nickel films with two different preferred orientations were prepared by electrodeposition. The interfacial reactions of copper and tin and nickel and tin with different preferred orientations were observed and studied. The effect of crystallographic preferred orientation on the growth of intermetallic compounds was systematically studied. In the process of electrodeposition, copper and nickel films with specific orientation can be obtained by controlling the electrodeposition conditions such as additive, current density, power supply type and so on. The preferred orientation of copper film was (220). With the increase of current density, the preferred orientation of nickel films changed from (111) to (200). The (200) crystal plane of nickel thin film exhibits obvious preferred orientation under DC condition, and the (111) crystal plane begins to show a certain degree of preference under pulse condition. The diffusion coefficients of atoms in different crystal planes are different. When the orientation of the coating is preferred, the diffusion of atoms in the coating also shows anisotropy. In addition, compared with solid-liquid reaction (reflux), it is the diffusion rate of the reaction atom that determines the reaction rate (aging) and morphology of the solid-solid interface reaction. Because the diffusion rates of atoms are anisotropic, they have different diffusion rates in coatings with different preferred orientations. As a result, the morphology and growth rate of the interface reaction products are affected. (200) the arrangement of atoms on the crystal plane is more dense than that on the (220) plane, so the diffusion of atoms on the (200) crystal plane is more difficult. The diffusivity is smaller than that on the (220) crystal plane. There are obvious small facets in the IMCs grain at the Cu (200)-Sn interface, which are arranged at different angles to form polygonal patterns, and fine pores are formed between the grains. However, there was no similar phenomenon at the interface of Cu (220)-Sn. The preferential nucleation of Cu _ 3SN and the interface of Cu _ (220)-Cu6Sn5 existed at the grain boundary. A thin sheet IMCs, of the same thickness was formed at the interface of Ni _ (220)-Sn. IMCs at the interface of Ni _ (200)-Sn is equiaxed and the grain size is uniform. When the atomic ratio of Ni/Sn in the flake IMCs of Ni _ (200)-Sn interface is greater than that at the interface of Ni _ (200)-Sn, the aging reaction of IMCs, is fully carried out. The ratio of Ni/Sn atoms in the two kinds of IMCs changed to 3? 4, that is, the common nickel-tin intermetallic compound Ni3Sn4. was formed. Over a long period of time, the IMCs layer continues to grow, constantly consuming the tin coating in the middle to form large intermetallic compounds, and can even consume differentiated Sn layers that run through the entire interface. At the same time, holes and cracks appear in the loose structure of IMCs at the interface of Ni (220)-Sn, which will affect the mechanical and electrical properties of the bonding interface.
【學(xué)位授予單位】：上海交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ153
[Abstract]:With the development of micro-electronic products to high density, narrow spacing and short path, the size of interconnect solder joint used in 3D laminated packaging also decreases significantly. Due to its good mechanical and electrical properties, copper bump is considered to be a substitute for traditional solder ball micro-bumps, which can be used in high-density packaging technology with the aspect ratio of detail distance to depth. Under the condition of miniaturization, the crystal orientation of a single convex point has a more and more obvious effect on the interfacial reaction and the nucleation and growth of intermetallic compounds at the interface are greatly affected by the decrease of the grain content in the single convex point. At present, the research on the effect of crystallographic orientation on bonding interface reaction is mostly based on single crystal substrate. However, the fabrication of single crystal substrate is not easy and the cost is high. In practical application, polycrystalline convex points should be deposited by electrodeposition. Therefore, it is of great significance to clarify the effect of electrodeposition process parameters on the preferred orientation of the coating and the effect of the coating texture on the growth of intermetallic compounds at the interface. In this paper, the effects of bath additives, current density and pulse plating on the orientation selection of thin films were investigated. Copper and nickel films with two different preferred orientations were prepared by electrodeposition. The interfacial reactions of copper and tin and nickel and tin with different preferred orientations were observed and studied. The effect of crystallographic preferred orientation on the growth of intermetallic compounds was systematically studied. In the process of electrodeposition, copper and nickel films with specific orientation can be obtained by controlling the electrodeposition conditions such as additive, current density, power supply type and so on. The preferred orientation of copper film was (220). With the increase of current density, the preferred orientation of nickel films changed from (111) to (200). The (200) crystal plane of nickel thin film exhibits obvious preferred orientation under DC condition, and the (111) crystal plane begins to show a certain degree of preference under pulse condition. The diffusion coefficients of atoms in different crystal planes are different. When the orientation of the coating is preferred, the diffusion of atoms in the coating also shows anisotropy. In addition, compared with solid-liquid reaction (reflux), it is the diffusion rate of the reaction atom that determines the reaction rate (aging) and morphology of the solid-solid interface reaction. Because the diffusion rates of atoms are anisotropic, they have different diffusion rates in coatings with different preferred orientations. As a result, the morphology and growth rate of the interface reaction products are affected. (200) the arrangement of atoms on the crystal plane is more dense than that on the (220) plane, so the diffusion of atoms on the (200) crystal plane is more difficult. The diffusivity is smaller than that on the (220) crystal plane. There are obvious small facets in the IMCs grain at the Cu (200)-Sn interface, which are arranged at different angles to form polygonal patterns, and fine pores are formed between the grains. However, there was no similar phenomenon at the interface of Cu (220)-Sn. The preferential nucleation of Cu _ 3SN and the interface of Cu _ (220)-Cu6Sn5 existed at the grain boundary. A thin sheet IMCs, of the same thickness was formed at the interface of Ni _ (220)-Sn. IMCs at the interface of Ni _ (200)-Sn is equiaxed and the grain size is uniform. When the atomic ratio of Ni/Sn in the flake IMCs of Ni _ (200)-Sn interface is greater than that at the interface of Ni _ (200)-Sn, the aging reaction of IMCs, is fully carried out. The ratio of Ni/Sn atoms in the two kinds of IMCs changed to 3? 4, that is, the common nickel-tin intermetallic compound Ni3Sn4. was formed. Over a long period of time, the IMCs layer continues to grow, constantly consuming the tin coating in the middle to form large intermetallic compounds, and can even consume differentiated Sn layers that run through the entire interface. At the same time, holes and cracks appear in the loose structure of IMCs at the interface of Ni (220)-Sn, which will affect the mechanical and electrical properties of the bonding interface.
【學(xué)位授予單位】：上海交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ153
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