發(fā)布時(shí)間：2018-07-09 15:50

  本文選題：機(jī)械制造工藝與設(shè)備 + 電火花成形加工　； 參考：《兵工學(xué)報(bào)》2017年09期

【摘要】：針對(duì)電火花加工過(guò)程中材料去除率、表面粗糙度和電極損耗這3個(gè)工藝目標(biāo)不能同時(shí)兼顧的問(wèn)題,以P型單晶硅為試驗(yàn)加工對(duì)象,采用中心組合設(shè)計(jì)試驗(yàn)考察峰值電流、脈沖寬度、脈沖間隔對(duì)單晶硅電火花成形加工過(guò)程中材料去除率、表面粗糙度以及電極損耗的影響,引入響應(yīng)曲面法建立材料去除率、表面粗糙度和電極損耗的2階關(guān)系模型,方差分析結(jié)果表明響應(yīng)模型具有很好的擬合程度和適應(yīng)性。進(jìn)一步分析實(shí)際加工條件對(duì)工藝參數(shù)的約束,以提高材料去除率,降低表面粗糙度和電極損耗為目標(biāo)建立工藝參數(shù)優(yōu)化模型,設(shè)計(jì)基于帶精英策略的非支配排序遺傳算法對(duì)優(yōu)化問(wèn)題進(jìn)行求解。在最優(yōu)解條件下材料去除率的驗(yàn)證結(jié)果與理論最優(yōu)值的平均相對(duì)誤差為4.9%,表面粗糙度的驗(yàn)證結(jié)果與理論最優(yōu)值的平均相對(duì)誤差為5.2%,電極損耗的驗(yàn)證結(jié)果與理論最優(yōu)值的平均相對(duì)誤差為5.7%.驗(yàn)證試驗(yàn)表明,該算法能實(shí)現(xiàn)硅材料放電成形加工過(guò)程的工藝參數(shù)優(yōu)化。
[Abstract]:In order to solve the problem that the material removal rate, surface roughness and electrode loss can not be taken into account simultaneously in EDM, P-type monocrystalline silicon is taken as the experimental processing object, and the peak current is investigated by the central combination design test. The effects of pulse width and pulse interval on material removal rate, surface roughness and electrode loss in EDM process were studied. The second order model of material removal rate, surface roughness and electrode loss was established by using response surface method. The results of variance analysis show that the response model has good fitting degree and adaptability. In order to improve the material removal rate, reduce the surface roughness and electrode loss, the optimization model of the process parameters is established by further analyzing the constraints of the actual processing conditions on the process parameters. An undominated sorting genetic algorithm with elitist strategy is designed to solve the optimization problem. The average relative error between the material removal efficiency and the theoretical optimal value is 4.9, the average relative error between the surface roughness verification result and the theoretical optimal value is 5.2, and the electrode loss verification result is the theoretical one. The average relative error of the best value is 5.7. The experimental results show that the algorithm can optimize the process parameters of the discharge forming process of silicon material.
【作者單位】： 西安理工大學(xué)機(jī)械與精密儀器工程學(xué)院;西安現(xiàn)代控制技術(shù)研究所;
【基金】：國(guó)家自然科學(xué)基金項(xiàng)目(51575442) 陜西省自然科學(xué)基金項(xiàng)目(2016JZ011) 陜西省教育廳基金項(xiàng)目(2014SZS10-Z01)
【分類號(hào)】：TQ127.2
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本文編號(hào)：2109865