本文選題：SiC + 納米線　； 參考：《陶瓷學(xué)報》2017年03期

【摘要】：采用流化床化學(xué)氣相沉積法,以甲基三氯硅烷為前軀體,二茂鐵為催化劑成功制備出SiC納米線。利用X射線衍射儀分析產(chǎn)物的物相,利用掃描電子顯微鏡和透射電子顯微鏡觀察樣品的顯微形貌。結(jié)果表明,在1200 ℃的制備條件下,所得納米線為立方相β-SiC,納米線直徑為50-100 nm,長度大于100μm,具有非常高的長徑比。單根納米線具有單晶特征,生長方向為111方向,并存在堆垛層錯。提高制備溫度至1300 ℃,在所制備的納米線中,還發(fā)現(xiàn)了竹節(jié)狀和堆垛狀納米線,表明流化床體系中復(fù)雜的沉積環(huán)境。通過連續(xù)的氣體載帶,可以實現(xiàn)SiC納米線的連續(xù)制備,在50 mm直徑的流化管中可獲得2.0 g/h的產(chǎn)量。通過后續(xù)優(yōu)化和放大,本方法具有非常好的工業(yè)化前景。
[Abstract]:Sic nanowires were prepared by fluidized bed chemical vapor deposition with methyl trichlorosilane as precursor and ferrocene as catalyst. The phase of the product was analyzed by X-ray diffractometer, and the morphology of the sample was observed by scanning electron microscope and transmission electron microscope. The results show that the nanowires are cubic phase 尾 -SiC at 1200 鈩，

本文編號：2070130