本文選題：單晶硅 + 電火花線(xiàn)切割��； 參考：《西安理工大學(xué)》2017年碩士論文

【摘要】：單晶硅具有良好的物理、機(jī)械性能,但由于材料的特殊結(jié)構(gòu)導(dǎo)致其硬度高、脆性大,使得其加工過(guò)程很困難,目前大多采用線(xiàn)鋸切割,但由于切割過(guò)程中存在宏觀(guān)力的作用,使得切片表面的翹曲,劃痕無(wú)法避免。本文研究采用電火花線(xiàn)切割的加工方法切割單晶硅的過(guò)程,目的在于提高單晶硅表面質(zhì)量與切削效率。在分析電火花線(xiàn)切割單晶硅過(guò)程的基礎(chǔ)上。將電壓、脈寬、脈間、線(xiàn)速度作為影響電火花線(xiàn)切割單晶硅工藝目標(biāo)的變量參數(shù),設(shè)計(jì)單因素與多因素單目標(biāo)試驗(yàn),研究工藝參數(shù)對(duì)工藝目標(biāo)的影響,并對(duì)影響規(guī)律進(jìn)行深入分析。進(jìn)行單因素實(shí)驗(yàn),確定工藝目標(biāo)最優(yōu)時(shí)單個(gè)參數(shù)的范圍。進(jìn)行多因素實(shí)驗(yàn)由響應(yīng)曲面法建立關(guān)于工藝目標(biāo)與工藝參數(shù)的二階回歸模型并運(yùn)用最小二乘數(shù)法擬合模型方程。對(duì)模型方程進(jìn)行方差分析,確定關(guān)于工藝參數(shù)與工藝目標(biāo)的模型方程的有效性。由單目標(biāo)二元回歸方程建立多目?jī)?yōu)化模型的目標(biāo)函數(shù),選擇適合本文目標(biāo)函數(shù)的多目標(biāo)優(yōu)化算法。第二代非支配排序遺傳算的精英保留策略使得其能夠優(yōu)化很多種多目標(biāo)模型,故使用第二代非支配排序遺傳算法對(duì)本文的目標(biāo)函數(shù)進(jìn)行優(yōu)化。通過(guò)100代進(jìn)化得出關(guān)于切削效率與表面粗糙度的帕累托解集,將理論解與實(shí)驗(yàn)值進(jìn)行對(duì)比,驗(yàn)證理論解的可行性。第二代基于強(qiáng)度帕累托進(jìn)化算法由于其獨(dú)有的選擇策略與進(jìn)化策略使得其多目標(biāo)解集比其他算法的得出的解集更平穩(wěn)與均勻,故將此算法應(yīng)用到關(guān)于表面粗糙度與切削效率的多目標(biāo)優(yōu)化。將第二代基于強(qiáng)度帕累托進(jìn)化算法得出的帕累托解集與第二代非支配排序遺傳算法得出的帕累托解進(jìn)行對(duì)比驗(yàn)證。
[Abstract]:Monocrystalline silicon has good physical and mechanical properties, but because of its high hardness and high brittleness due to the special structure of the material, it is very difficult to process. At present, most of the monocrystalline silicon is cut by wire saw, but because of the macroscopical force in the cutting process, Make slice surface warp, scratches can not be avoided. The process of single crystal silicon cutting by WEDM is studied in this paper. The purpose is to improve the surface quality and cutting efficiency of monocrystalline silicon. Based on the analysis of EDM single crystal silicon process. Voltage, pulse width, interpulse and linear velocity are regarded as variable parameters that affect the target of WEDM single crystal silicon process. Single factor and multi factor single objective test are designed to study the influence of process parameters on the process target. The influence law is analyzed deeply. Single factor experiments were carried out to determine the range of single parameters when the process target was optimal. The second order regression model of process target and process parameters was established by response surface method and the model equation was fitted by least square multiplier method. The variance analysis of the model equation is carried out to determine the validity of the model equation about the process parameters and process objectives. The objective function of the multi-objective optimization model is established from the single-objective binary regression equation, and the multi-objective optimization algorithm suitable for the objective function in this paper is selected. The elite retention strategy of the second generation undominated sorting genetic algorithm makes it possible to optimize many kinds of multi-objective models, so the second generation non-dominated sorting genetic algorithm is used to optimize the objective function in this paper. The Pareto solution set on cutting efficiency and surface roughness is obtained through 100 generations evolution. The theoretical solution is compared with the experimental value to verify the feasibility of the theoretical solution. Because of its unique selection strategy and evolutionary strategy, the second generation Pareto evolutionary algorithm based on strength makes its multi-objective solution set more stable and uniform than the solution set obtained by other algorithms. Therefore, this algorithm is applied to the multi-objective optimization of surface roughness and cutting efficiency. The Pareto solution set of the second generation based on the intensity Pareto evolutionary algorithm is compared with the Pareto solution obtained by the second generation non-dominant sorting genetic algorithm.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TQ127.2

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 蔡錦達(dá);陳濤;王穎;陟俊杰;;半導(dǎo)體激光切割金屬薄板工藝[J];光電工程;2016年09期

2 潘慧君;劉志東;邱明波;田宗軍;;半導(dǎo)體電火花加工爬坡式電流現(xiàn)象研究[J];中國(guó)機(jī)械工程;2014年13期

3 王敬蕊;蔡曉晨;陳銳;蔣碧蕾;;太陽(yáng)能用硅片技術(shù)及其進(jìn)展[J];通信電源技術(shù);2013年02期

4 林健;;多線(xiàn)切割工藝中晶片翹曲度的控制[J];半導(dǎo)體技術(shù);2009年04期

5 白國(guó)應(yīng);關(guān)于半導(dǎo)體技術(shù)文獻(xiàn)分類(lèi)的研究[J];津圖學(xué)刊;2004年04期

6 解振華,魏昕,黃蕊慰,熊偉;半導(dǎo)體晶片的金剛石工具切割技術(shù)[J];金剛石與磨料磨具工程;2004年01期

7 袁根福,曾曉雁;單晶硅的激光銑削試驗(yàn)研究[J];激光技術(shù);2003年05期

8 蔣榮華,肖順珍;我國(guó)半導(dǎo)體硅材料的發(fā)展現(xiàn)狀[J];半導(dǎo)體情報(bào);2001年06期

9 朱立賢,林海;鍺的研究進(jìn)展[J];飼料研究;2000年03期

10 伍俊,李明輝;電火花加工中放電間隙狀態(tài)的識(shí)別技術(shù)研究[J];模具技術(shù);2000年01期

相關(guān)博士學(xué)位論文 前1條

1 邱明波;半導(dǎo)體晶體材料放電加工技術(shù)研究[D];南京航空航天大學(xué);2010年

相關(guān)碩士學(xué)位論文 前3條

1 吳法彥;多線(xiàn)電火花線(xiàn)切割加工裝置設(shè)計(jì)及實(shí)驗(yàn)研究[D];哈爾濱工業(yè)大學(xué);2014年

2 宋佳杰;高晶向精度的單晶硅定晶向放電切割進(jìn)電特性及工藝研究[D];南京航空航天大學(xué);2012年

3 張慧剛;電火花與激光加工表面質(zhì)量比較分析及評(píng)定研究[D];哈爾濱工程大學(xué);2012年

，

本文編號(hào)：2040911