本文選題：石墨烯 + 光譜表征　； 參考：《太原理工大學(xué)》2017年碩士論文

【摘要】：石墨烯因具有獨特的二維結(jié)構(gòu)以及優(yōu)異的性能,如高電荷遷移率、高透光率、高強度、高理論比表面積和優(yōu)良的熱傳導(dǎo)性等,因而廣泛應(yīng)用于電子器件、儲能器件、復(fù)合材料、傳感器等領(lǐng)域。隨著石墨烯制備和應(yīng)用逐步進入工業(yè)規(guī)�；a(chǎn)階段,對石墨烯的準(zhǔn)確測量的重要性日益凸顯。不同制備方法生產(chǎn)的石墨烯厚度(層數(shù))都是不均勻的,所得到的石墨烯質(zhì)量也不相同。只有準(zhǔn)確的對石墨烯進行表征,才能保證其性能和結(jié)構(gòu)的研究和應(yīng)用,才能為石墨烯的制備提供可靠的改進依據(jù)。石墨烯的光譜表征研究,有助于檢測和控制石墨烯的質(zhì)量,有效推動石墨烯在各個領(lǐng)域的廣泛應(yīng)用。目前可量產(chǎn)的石墨烯制備方法主要是化學(xué)氣相沉積法(CVD)和氧化還原法,本文針對這兩種方法制備的石墨烯薄膜和石墨烯粉體進行光譜表征研究。本文的主要研究內(nèi)容包括:1.針對CVD石墨烯薄膜的雜質(zhì)的快速準(zhǔn)確表征進行了研究。通過拉曼成像對石墨烯薄膜進行檢測,利用G峰峰位、2D峰峰位以及IG/I2D的拉曼成像圖來識別石墨烯薄膜的層數(shù);利用石墨烯薄膜的光學(xué)圖像以及IG和I2D的拉曼成像圖來識別單層石墨烯和折疊雙層石墨烯;利用ID/IG,來判斷出無定形碳和結(jié)晶碳等化學(xué)雜質(zhì);利用2D峰峰位、半峰寬和IG/I2D的拉曼成像圖來研究石墨烯的邊緣效應(yīng)。通過原子力顯微鏡對拉曼成像的表征結(jié)果進行驗證。拉曼成像技術(shù)可以實現(xiàn)CVD石墨烯薄膜層數(shù)測量、化學(xué)雜質(zhì)檢測、折疊結(jié)構(gòu)判定以及邊緣效應(yīng)的研究,為工廠提供了一種可以快速、簡單、準(zhǔn)確、無損分析的技術(shù)來檢測和控制石墨烯薄膜的質(zhì)量。2.針對溫度對堆疊雙層石墨烯的影響進行了研究。通過拉曼光譜表征研究了室溫下不同層數(shù)的堆疊石墨烯薄膜和CVD生長石墨烯薄膜的層間耦合狀態(tài);不同溫度下SiO2/Si基底對堆疊雙層石墨烯和CVD雙層石墨烯的影響;溫度對堆疊雙層石墨烯/基底和CVD雙層石墨烯/基底層間耦合狀態(tài)的影響,并計算了兩種材料分別在25℃-250℃和250℃-400℃之間的G峰峰位的溫度系數(shù)以及2D峰半峰寬的溫度系數(shù)。3.針對氧化石墨烯和還原氧化石墨烯粉體的區(qū)別進行了研究。使用拉曼光譜、紅外光譜、紫外-可見吸收光譜對氧化石墨烯和還原氧化石墨烯進行檢測分析,研究了二者在不同光譜表征中的區(qū)別。4.針對共焦顯微拉曼光譜儀空間分辨率進行了研究。利用尺寸為500 nm的聚苯乙烯微球(NIST標(biāo)準(zhǔn)物質(zhì))分別測試了相同條件下的真共焦和贗共焦顯微拉曼的三維成像圖。通過聚苯乙烯微球的三維拉曼成像實驗擬合出真共焦和贗共焦顯微拉曼在此條件下的橫向和軸向空間分辨率,通過理論計算公式求出同等條件下的橫向和軸向空間分辨率,并對兩種方式得出的空間分辨率進行比較。
[Abstract]:Graphene is widely used in electronic devices, energy storage devices and composites because of its unique two-dimensional structure and excellent properties, such as high charge mobility, high transmittance, high intensity, high theoretical surface area and excellent thermal conductivity. Sensors, etc. With the preparation and application of graphene, the importance of accurate measurement of graphene is becoming more and more important. The thickness (number of layers) of graphene produced by different preparation methods is not uniform, and the quality of graphene obtained is also different. Only by accurately characterizing graphene can the study and application of its properties and structures be guaranteed and the reliable basis for the preparation of graphene can be provided. The spectroscopic characterization of graphene is helpful to detect and control the quality of graphene and promote the wide application of graphene in various fields. At present, the main preparation methods of graphene are chemical vapor deposition (CVD) and redox method. In this paper, the graphene thin films and graphene powders prepared by these two methods are characterized by spectrum. The main contents of this paper include: 1. The fast and accurate characterization of impurities in CVD graphene films was studied. The graphene films were detected by Raman imaging, and the layers of graphene films were identified by G peak 2D peak position and IGR / I2D Raman imaging. Using optical images of graphene films and Raman images of IG and I2D to identify monolayer graphene and folded bilayer graphene, using ID / IGR to determine chemical impurities such as amorphous carbon and crystalline carbon, using 2D peak position, The edge effect of graphene is studied by half peak width and Raman imaging of IGR 2 D. The characterization results of Raman imaging were verified by atomic force microscope (AFM). Raman imaging technology can be used to measure the number of layers of CVD graphene films, detect chemical impurities, determine the folding structure and study the edge effect. It provides a fast, simple and accurate method for manufacturing. Nondestructive analysis techniques to detect and control the quality of graphene films. The effect of temperature on stacking double layer graphene was studied. The interlaminar coupling states of stacked graphene films with different layers at room temperature and that of CVD grown graphene films were investigated by Raman spectroscopy, and the effects of Sio _ 2 / Si substrate on stacked bilayer graphene and CVD bilayer graphene were investigated at different temperatures. The effect of temperature on the coupling state between stacked bilayer graphene / substrate and CVD bilayer graphene / substrate, The temperature coefficients of G peak and 2D peak width between 25 鈩，

本文編號：2013102