本文選題：黑磷烯 + 二維納米材料��； 參考：《哈爾濱工業(yè)大學(xué)》2015年碩士論文

【摘要】：黑磷作為一種新型的二維材料由于具有良好的電學(xué)與光電特性,因此受到科研工作者的廣泛關(guān)注。黑磷屬于雙極性的窄帶隙的半導(dǎo)體,其帶隙為直接帶隙,帶隙類型不隨著黑磷厚度的變化而改變;黑磷場效應(yīng)管器件的載流子遷移率可以達(dá)到10000 cm2V-1s-1,略低于石墨烯的載流子遷移率但遠(yuǎn)高于過渡金屬硫化物。此外,由于黑磷晶體結(jié)構(gòu)的各向異性,在外場的作用下可以對黑磷的帶隙在較寬的范圍內(nèi)進(jìn)行調(diào)控,因此黑磷在柔性光電探測器件領(lǐng)域具有廣闊的應(yīng)用前景�，F(xiàn)如今對于黑磷的研究尚處于初步階段,對于黑磷的電學(xué)性質(zhì)、力學(xué)性質(zhì)以及相關(guān)的光電異質(zhì)結(jié)器件的報道較少。本文針對以上的問題,采用掃描探針顯微鏡電學(xué)與力學(xué)模塊配合半導(dǎo)體器件探針臺對黑磷及其異質(zhì)結(jié)的電學(xué)力學(xué)性質(zhì)以及光電特性進(jìn)行了研究,此外透射電鏡以及微區(qū)拉曼光譜對于黑磷在退火條件下黑磷的相變行為進(jìn)行了初步的探索。研究表明,原始黑磷的表面電勢隨黑磷厚度的增大逐漸降低,塊狀黑磷的表面電勢約為-51.5 m V。此外,黑磷表面的磷氧化合物對于黑磷表面電勢的影響較大。黑磷在300 oC退火過程中發(fā)生了黑磷表面磷氧化合物以及黑磷本身的揮發(fā),此外還存在正交晶系的黑磷向單斜晶系的紫磷的相變過程。黑磷的相變過程導(dǎo)致了退火后黑磷表面電勢的明顯升高。退火處理后厚度為17.6 nm的紫磷為p型半導(dǎo)體,其空穴的載流子遷移率為226.3 cm2V-1s-1。本文利用掃描探針顯微鏡的力學(xué)模塊對黑磷的力學(xué)性質(zhì)進(jìn)行了分析。黑磷存在明顯的負(fù)泊松比材料的特性;而其楊氏模量隨黑磷厚度的增加而逐漸降低。當(dāng)黑磷的厚度為14.3 nm時,其楊氏模量為276±32.4 GPa。隨著黑磷厚度的增加,其楊氏模量值趨近于塊狀黑磷的楊氏模量值。此外黑磷的斷裂強(qiáng)度大于25GPa而斷裂應(yīng)變大于8%,滿足柔性器件的要求。此外本課題利用橫向力顯微鏡對黑磷表面摩擦力進(jìn)行了初步的探索,相比于各向同性的Mo S2,黑磷的表面摩擦力存在著明顯的各向異性。黑磷表面摩擦力最大值與最小值的方向呈90度角,對應(yīng)黑磷的[100]與[010]晶向的各向異性。通過建立黑磷表面摩擦力與晶體取向的關(guān)系,對今后制備黑磷電學(xué)器件有一定的指導(dǎo)意義。利用導(dǎo)電原子力顯微鏡對B-P/Si異質(zhì)結(jié)結(jié)構(gòu)的光電特性進(jìn)行了研究,B-P/p-Si異質(zhì)結(jié)結(jié)構(gòu)在光照的條件下,正向與負(fù)向均有光電流的產(chǎn)生,光電流的大小隨著光照強(qiáng)度的提高而提高,在入射光波長為460 nm,功率為106 m W/cm2的光照條件下,光電流達(dá)到最大值約為11 n A。B-P/p-Si異質(zhì)結(jié)結(jié)構(gòu)對于460 nm波長的光照較為敏感,其光響應(yīng)的大小可以達(dá)到4.5 A/W。而B-P/n-Si異質(zhì)結(jié)結(jié)構(gòu)的光電性能相比于B-P/p-Si性能較低,在正向偏壓作用下,B-P/n-Si異質(zhì)結(jié)結(jié)構(gòu)出現(xiàn)明顯的負(fù)微分效應(yīng)。最后建立了B-P/Si異質(zhì)結(jié)能帶結(jié)構(gòu)以及光生載流子分離規(guī)律。
[Abstract]:Black phosphorus, as a new two-dimensional material, is widely concerned by researchers because of its good electrical and photoelectric properties. Black phosphorus belongs to bipolar narrow band gap semiconductor, its band gap is direct band gap, the type of band gap does not change with the change of black phosphorus thickness. The carrier mobility of black phosphorus FET devices can reach 10000 cm2V-1s-1, which is slightly lower than that of graphene, but far higher than that of transition metal sulfides. In addition, due to the anisotropy of black phosphorus crystal structure, the band gap of black phosphorus can be adjusted in a wide range under the action of external field, so black phosphorus has a broad application prospect in the field of flexible photodetectors. At present, the study of black phosphorus is still in the preliminary stage. There are few reports on the electrical properties, mechanical properties and the related photovoltaic heterojunction devices of black phosphorus. In order to solve the above problems, the electrical and optical properties of black phosphorus and its heterojunction were studied by scanning probe microscope (SEM) and mechanical module combined with the semiconductor device probe bench. In addition, the phase transition behavior of black phosphorus under annealing condition was investigated by TEM and Raman spectroscopy. The results show that the surface potential of black phosphorus decreases with the increase of the thickness of black phosphorus, and the surface potential of bulk black phosphorus is about -51.5 MV. In addition, the surface potential of black phosphorus is greatly affected by phosphorus oxide compounds on the black phosphorus surface. The volatilization of phosphorus compounds on the surface of black phosphorus and black phosphorus itself occurs during the annealing of black phosphorus at 300oC. In addition, there is a phase transition process from black phosphorus of orthogonal crystal system to purple phosphorus of monoclinic system. The phase transition of black phosphorus leads to a significant increase in the surface potential of black phosphorus after annealing. After annealing, the thickness of purple phosphorus 17.6 nm is p-type semiconductor, and the carrier mobility of the hole is 226.3 cm2V-1s-1. In this paper, the mechanical properties of black phosphorus were analyzed by using the mechanical module of scanning probe microscope. Black phosphorus has the characteristic of negative Poisson's ratio, and its Young's modulus decreases with the increase of black phosphorus thickness. When the thickness of black phosphorus is 14.3 nm, its Young's modulus is 276 鹵32.4 GPA. With the increase of the thickness of black phosphorus, the Young's modulus of black phosphorus tends to be similar to that of bulk black phosphorus. In addition, the breaking strength of black phosphorus is more than 25 GPA and the fracture strain is more than 8, which meets the requirements of flexible devices. In addition, the surface friction of black phosphorus is studied by transverse force microscope. Compared with the isotropic MoS _ 2, the surface friction of black phosphorus has obvious anisotropy. The direction of maximum and minimum friction force on black phosphorus surface is 90 degrees, which corresponds to the anisotropy of [100] and [010] directions of black phosphorus. By establishing the relationship between the surface friction of black phosphorus and the crystal orientation, it has a certain guiding significance for the preparation of black phosphorus electrical devices in the future. The optoelectronic properties of B-P / Si heterojunction structure were studied by means of conductive atomic force microscope (AFM). Under the condition of illumination, both positive and negative photocurrent were produced, and the photocurrent increased with the increase of light intensity. When the incident wavelength is 460 nm and the power is 106 MW / cm ~ 2, the maximum photocurrent is about 11nA.B-P / p-Si heterojunction, which is sensitive to the illumination at 460 nm, and the light response can reach 4.5 A / W. The optoelectronic properties of B-P / n-Si heterojunction are lower than that of B-P / p-Si, and the negative differential effect of B-P / n-Si heterojunction is obvious under positive bias. Finally, the band structure of B-P / Si heterojunction and the separation of photogenerated carriers are established.
【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ126.31

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