本文選題：PAN-PZT + 場(chǎng)致應(yīng)變��； 參考：《上海師范大學(xué)》2015年碩士論文

【摘要】：具有良好壓電、介電和機(jī)電耦合性能的PZT系列陶瓷到目前為止在壓電材料應(yīng)用領(lǐng)域一直占主導(dǎo)地位。為提高其鐵電壓電性能,PZT基二元陶瓷逐漸向三元和四元等多元組分系統(tǒng)發(fā)展。目前主要有兩種摻雜方式可以實(shí)現(xiàn)多元組分系統(tǒng)材料的制備。一種是向PZT中添加已知的壓電陶瓷材料,以綜合了兩者的優(yōu)異性能,這種摻雜方式容易通過(guò)改變各成分含量和元素來(lái)調(diào)控材料性能;另一種是通過(guò)等價(jià)置換、硬性摻雜或軟性摻雜來(lái)優(yōu)化鐵電材料的性能,例如PZT中Fe3+取代Zr4+或者Ti4+之后,由于晶體內(nèi)部產(chǎn)生的內(nèi)置電場(chǎng)抵消了部分外部電場(chǎng),將會(huì)對(duì)摻雜后樣品的電滯回線產(chǎn)生顯著的影響。經(jīng)優(yōu)化后的材料是制造多層壓電陶瓷電容器、精密微位移器、傳感器、制動(dòng)器、醫(yī)用超聲換能器等功能器件的理想材料。目前的研究大多集中在PZT基三元陶瓷上,比如Pb(Fe1/2Nb1/2)O3-Pb(Mg1/2Nb1/2)O3-Pb(Zr0.52Ti0.48)O3,Pb(Mn1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3-Pb(Zr0.52Ti0.48)O3和Pb(Yb1/2Nb1/2)O3-Pb(Mn1/3Nb2/3)O3-Pb(Zr0.52Ti0.48)O3等,至今關(guān)于Pb Sr(Al1/2Nb1/2)O3-Pb(Zr0.52Ti0.48)O3的研究很少被報(bào)道。本論文第一部分主要對(duì)x PAN-PZT體系鐵電陶瓷進(jìn)行制備和表征,利用復(fù)合粒子(Al0.5Nb0.5)4+對(duì)PZT進(jìn)行摻雜改性。采用固相反應(yīng)法制備了x PANPZT體系鐵電陶瓷,并對(duì)其結(jié)構(gòu)和電學(xué)性能進(jìn)行了表征。通過(guò)測(cè)試我們發(fā)現(xiàn);隨著x的增加,x PZN-PZT體系的相結(jié)構(gòu)從四方相向三方相轉(zhuǎn)變,經(jīng)分析得出x PAN-PZT體系的準(zhǔn)同型相界MPB在x=0.1-0.12附近。x=0.1的組分在室溫下的最大應(yīng)變量Stotal=0.33%,準(zhǔn)靜態(tài)壓電系數(shù)d33為365 p C/N,剩余極化強(qiáng)度Pr為42μC/cm2,等效壓電系數(shù)Smax/Emax為493 pm/V;對(duì)比各組分的性能,我們發(fā)現(xiàn)0.1PAN-0.9PZT的綜合性能最為優(yōu)異。本論文第二部分在上述最優(yōu)組分的基礎(chǔ)上通過(guò)A位等價(jià)替代方式摻雜Sr2+離子,然后系統(tǒng)研究摻雜量對(duì)材料相結(jié)構(gòu)、壓電、鐵電和介電性能等方面影響。實(shí)驗(yàn)結(jié)果表明,Sr2+的摻雜對(duì)PAN-PZT體系的結(jié)構(gòu)影響不大,沒(méi)有觀察到相變,但對(duì)性能有顯著的影響。Sr2+的摻雜使得陶瓷的居里溫度和最大相對(duì)介電常數(shù)直線下降。當(dāng)Sr2+置換量為0.05 mol%時(shí),試樣的介電、壓電鐵電性能較優(yōu)異,準(zhǔn)靜態(tài)壓電系數(shù)d33=470 p C/N,剩余極化強(qiáng)度Pr為32.5μC/cm2,當(dāng)Sr2+置換量為0.1 mol%時(shí)Stotal=0.34%,Spol=0.21%,但居里溫度較低,Tm為220℃。
[Abstract]:PZT series ceramics with good piezoelectric, dielectric and electromechanical coupling properties have been dominant in the application of piezoelectric materials up to now. In order to improve its ferroelectric properties, PZT-based binary ceramics are gradually developed into ternary and quaternary multicomponent systems. At present, there are two kinds of doping methods to achieve the preparation of multicomponent system materials. One is to add known piezoelectric ceramic materials to PZT to synthesize the excellent properties of the two materials, which are easily controlled by changing the contents and elements of each component, and the other is by equivalent substitution. In order to optimize the properties of ferroelectric materials by hard doping or soft doping, for example, after Fe _ 3 replaces Zr _ 4 or Ti _ 4 in PZT, part of the external electric field is offset by the built-in electric field generated in the crystal. The hysteresis loop of doped samples will be significantly affected. The optimized material is an ideal material for the fabrication of multi-layer piezoelectric ceramic capacitors, precision micro-displacement devices, sensors, brakes, medical ultrasonic transducers and other functional devices. 鐩墠鐨勭爺絀跺ぇ澶氶泦涓湪PZT鍩轟笁鍏冮櫠鐡蜂笂,姣斿Pb(Fe1/2Nb1/2)O3-Pb(Mg1/2Nb1/2)O3-Pb(Zr0.52Ti0.48)O3,Pb(Mn1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3-Pb(Zr0.52Ti0.48)O3鍜孭b(Yb1/2Nb1/2)O3-Pb(Mn1/3Nb2/3)O3-Pb(Zr0.52Ti0.48)O3絳，

本文編號(hào)：1999136