本文選題：石墨烯量子點(diǎn) + 摻雜��； 參考：《哈爾濱工業(yè)大學(xué)》2017年碩士論文

【摘要】：石墨烯量子點(diǎn)作為一種新型的碳納米材料,一經(jīng)發(fā)現(xiàn)便廣受人們關(guān)注,它不僅繼承了石墨烯的比表面積大等優(yōu)異特性,兼具有量子點(diǎn)的某些特性,如量子限域效應(yīng)、邊緣效應(yīng)、小尺寸效應(yīng)等。原來帶隙為零的石墨烯經(jīng)切割變?yōu)榱孔狱c(diǎn)后,帶隙被打開了,使得其在光電領(lǐng)域有良好的應(yīng)用前景。本文主要研究摻雜型石墨烯量子點(diǎn)的制備,采用一步水熱法分別制備出了硫氮共摻雜的石墨烯量子點(diǎn)(S,N-GQDs)和氯摻雜的石墨烯量子點(diǎn)(Cl-GQDs)。討論分析了硫氮共摻雜和氯摻雜及不同制備參數(shù)(水熱溫度、水熱時(shí)間、摻雜比例)對(duì)石墨烯量子點(diǎn)光學(xué)性能的影響。利用TEM、AFM、XPS、FTIR、Raman、XRD、PL、EL等各種表征手段對(duì)所制得的S,N-GQDs和Cl-GQDs進(jìn)行分析研究。以檸檬酸為碳源,硫脲為摻雜源在水熱溫度160℃,水熱時(shí)間6 h,檸檬酸和硫脲配比為1:4的條件下制得的S,N-GQDs,粒徑均一,平均尺寸7 nm,厚度為1~2層石墨烯薄片,發(fā)光波長無明顯的激發(fā)依賴性,360 nm激發(fā)下發(fā)藍(lán)光,量子產(chǎn)率高達(dá)46.8%,熒光壽命可以被擬合成單指數(shù)曲線,說明S,N-GQDs是單一發(fā)色源。以β-環(huán)糊精為碳源,鹽酸為氯源,在水熱溫度160℃,水熱時(shí)間8 h,鹽酸摻雜量為1.5 ml的最優(yōu)條件下制備的Cl-GQDs粒徑比S,N-GQDs小,平均尺寸只有1.5 nm,厚度為2~3層石墨烯薄片,發(fā)光波長有明顯的激發(fā)依賴性,有兩個(gè)發(fā)射峰,且發(fā)光顏色是鮮有報(bào)道的白光。將紫外光激發(fā)下發(fā)藍(lán)光的S,N-GQDs和藍(lán)光激發(fā)下發(fā)黃光的熒光粉YAG:Ce3+在聚乙烯醇基體中混合制備S,N-GQDs/YAG:Ce3+/PVA薄膜,當(dāng)熒光粉YAG:Ce3+的摻雜量是0.1 g時(shí),薄膜在360 nm紫外光激發(fā)下是白光,色坐標(biāo)CIE(0.301,0.323),透過率高達(dá)76%,滿足光電領(lǐng)域的應(yīng)用要求。氯摻雜的石墨烯量子點(diǎn)(Cl-GQDs)與硅樹脂復(fù)合制成Cl-GQDs/硅樹脂發(fā)光薄膜。當(dāng)Cl-GQDs的加入量是1 ml時(shí),薄膜的發(fā)光強(qiáng)度最強(qiáng),也最接近白光,此時(shí)CIE(0.28,0.33),薄膜的透過率是76%。最終分別將S,N-GQDs/YAG:Ce3+/PVA薄膜和Cl-GQDs/硅樹脂薄膜與365 nm的紫外芯片結(jié)合在一起,組裝成遠(yuǎn)程白光LED器件,測試器件的電致發(fā)光性能,器件的發(fā)光亮度隨著注入電流的增加而增加,而器件的出光色坐標(biāo)則隨電流的增大而逐漸減小。此外,在不同工作電流下該遠(yuǎn)程白光LED器件的穩(wěn)定性較好,滿足高質(zhì)量照明領(lǐng)域的要求。
[Abstract]:As a new kind of carbon nanomaterials, graphene quantum dots (QDs) have attracted much attention once they have been discovered. They not only inherit the excellent properties of graphene, such as large specific surface area, but also have some properties of quantum dots, such as quantum limiting effect, edge effect, etc. Small size effect, etc. After cutting into quantum dots, the band gap of graphene with zero band gap has been opened, which makes it have a good application prospect in the field of photoelectricity. In this paper, the preparation of doped graphene quantum dots (QDs) has been studied. The sulfur-nitrogen co-doped graphene quantum dots (SN-GQDs) and chlorine-doped graphene quantum dots (Cl-GQDs) have been prepared by one-step hydrothermal method. The effects of sulfur and nitrogen co-doping and chlorine doping as well as different preparation parameters (hydrothermal temperature, hydrothermal time, doping ratio) on the optical properties of graphene quantum dots were discussed and analyzed. The Sn- GQDs and Cl-GQDs were prepared by means of various characterization methods, such as Tem AFM, XPS, FTIRN, Ramande, and PLEL, etc. Using citric acid as carbon source, thiourea as dopant source, under the conditions of hydrothermal temperature 160 鈩，

本文編號(hào)：1996361