本文選題：石墨烯 + 原位��； 參考：《中國地質(zhì)大學(xué)(北京)》2017年碩士論文

【摘要】：石墨烯具有原子尺寸的厚度和低剪切強度的層狀結(jié)構(gòu)、高的機械強度、低的表面能,同時具有良好的導(dǎo)熱導(dǎo)電能力和苛刻環(huán)境下的化學(xué)穩(wěn)定性,非常適宜作為微/納器件的納米潤滑薄膜,提高深空探測中微納米器件的可靠性。然而實際應(yīng)用中高質(zhì)量石墨烯的可控制備及轉(zhuǎn)移石墨烯與基底之間結(jié)合力不足限制了石墨烯在微納米接觸部件中的應(yīng)用。本文在具有催化金屬的基底硬質(zhì)合金和絕緣體Si片上,分別沉積SiC層及Co層和SiC層后退火,利用Co催化SiC薄膜原位生長石墨烯,研究了硬質(zhì)合金表面沉積的SiC薄膜在不同工藝參數(shù)下對生長石墨烯的影響,分析了Co催化SiC中石墨烯生成及變化的反應(yīng)機理;在Si片表面通過改變金屬層和固態(tài)碳源,探究了金屬層和固態(tài)碳源變化對石墨烯可控生長的影響。結(jié)果表明:(1)Co和SiC充分反應(yīng),隨著Si元素含量減少,石墨烯析出層的物相結(jié)構(gòu)發(fā)生變化,析出層呈CoSi化合物時,析出的碳原子難以形成石墨烯;由CoSi化合物向Co相的轉(zhuǎn)變過程中,生成石墨烯的層數(shù)先減少后增加,但石墨烯中缺陷含量一直減少。(2)Co層變化對生成石墨烯有明顯影響。Co層位于SiC薄膜表面時,在較短的退火時間下有利于石墨烯生成;Co層厚度增加,生成的石墨烯缺陷減少,質(zhì)量增加;SiC薄膜表面Co層預(yù)退火,對生成石墨烯沒有明顯影響。(3)SiC結(jié)晶狀態(tài)變化對石墨烯生成有明顯影響。非晶SiC薄膜退火后成分更加均勻,生成石墨烯中質(zhì)量提高,缺陷減少,結(jié)晶SiC結(jié)晶度提高,有利于提高生成石墨烯的質(zhì)量;結(jié)晶SiC薄膜內(nèi)C原子含量升高,有利于少層石墨烯的生成,同時生成石墨烯的質(zhì)量提高;利用金剛石作為固態(tài)碳源,生成的石墨烯層數(shù)較多。
[Abstract]:Graphene has atomic thickness and low shear strength layered structure, high mechanical strength, low surface energy, good thermal conductivity and chemical stability in harsh environment. It is very suitable for nano-lubricating film of micro / nano devices to improve the reliability of micro-nano devices in deep space exploration. However, the controllable preparation of high quality graphene and the lack of transfer bond between graphene and substrate in practical application limit the application of graphene in micro and nano contact parts. In this paper, SiC layer, Co layer and SiC layer were deposited on the substrate cemented carbide and insulator Si wafer with catalytic metal, respectively. In situ growth of graphene was carried out on SiC film catalyzed by Co. The effect of different technological parameters on the growth of graphene from SiC films deposited on the surface of cemented carbide was studied, and the reaction mechanism of the formation and change of graphene in SiC catalyzed by Co was analyzed, and the metal layer and solid carbon source were changed on the surface of Si. The effects of metal layer and solid carbon source on the controlled growth of graphene were investigated. The results showed that the phase structure of graphene precipitated layer changed with the decrease of Si content. When the precipitated layer was CoSi compound, it was difficult for the carbon atoms to form graphene, and in the process of transition from CoSi compound to Co phase, The number of graphene layers decreased first and then increased, but the defect content of graphene decreased continuously. The change of the layer of Co has a significant effect on the formation of graphene. The layer is located on the surface of SiC film. Under the short annealing time, the thickness of the formed Co layer of graphene is increased, the defects of the formed graphene are reduced, and the quality of the Co layer on the surface of sic thin film is increased, and the Co layer on the surface of sic film is preannealed. There is no obvious effect on the formation of graphene. The change of crystalline state of sic has obvious influence on the formation of graphene. After annealing, the composition of amorphous SiC films is more uniform, the quality of graphene is increased, the defects are reduced, the crystallinity of crystalline SiC is increased, and the quality of graphene is improved. The formation of graphene is beneficial to the formation of less layer graphene and the quality of the formation of graphene is improved, and diamond is used as the solid carbon source to produce more graphene layers.
【學(xué)位授予單位】：中國地質(zhì)大學(xué)(北京)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TQ127.11
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本文編號：1953184