本文選題：光輔助電化學(xué) + 相干多孔硅　； 參考：《長春理工大學(xué)》2017年碩士論文

【摘要】：相干多孔硅(Coherent Porous Silicon,CPS)是空間規(guī)則性排列的,孔徑尺寸大小均勻有序的多孔硅陣列。背部形貌良好的高長徑比相干多孔硅在硅微通道板、環(huán)路熱管和微針等領(lǐng)域被廣泛應(yīng)用。本文針對相干多孔硅的制備實驗展開研究,以n型硅為研究對象,自主設(shè)計搭建光電化學(xué)實驗裝置。研究過程中,采用不同的工藝參數(shù)進行光電化學(xué)實驗,經(jīng)過機械拋光處理后,用金相顯微鏡觀察刻蝕后相干多孔硅的背部形貌,研究刻蝕電壓、電解液溫度、HF濃度、光照強度等工藝參數(shù)對相干多孔硅背部形貌的影響;同時研究通道尺寸與刻蝕電流密度之間的關(guān)系,在考慮電解液擴散限制和暗電流對孔徑控制影響的情況下,根據(jù)實驗數(shù)據(jù)擬合得到等徑相干多孔硅刻蝕電流的控制曲線。研究表明:刻蝕電壓為0.6V,電解液溫度為23℃,HF濃度為5wt%,光照強度為85mW/cm2的實驗條件下制備的相干多孔硅背部形貌良好;并在最優(yōu)實驗條件下,根據(jù)刻蝕電流控制曲線控制光照強度,制備出形貌良好的相干多孔硅陣列。
[Abstract]:Coherent porous silicon (Coherent Porous silicon) is a regularly spaced porous silicon array with uniform pore size and ordered size. High aspect ratio coherent porous silicon with good back shape is widely used in silicon microchannel plate, loop heat pipe and microneedle. In this paper, the preparation experiment of coherent porous silicon is studied. Taking n-type silicon as the research object, the photoelectric chemical experimental device is designed and built independently. In the course of the study, photochemical experiments were carried out with different process parameters. After mechanical polishing, the back morphology of coherent porous silicon after etching was observed by metallographic microscope, and the etching voltage, electrolyte temperature and HF concentration were studied. The influence of process parameters such as light intensity on the back morphology of coherent porous silicon and the relationship between channel size and etching current density are studied. The influence of electrolyte diffusion and dark current on pore size control is considered. According to the experimental data fitting, the control curve of etching current of equal-diameter coherent porous silicon is obtained. The experimental results show that the back morphology of the coherent porous silicon prepared under the conditions of etching voltage of 0.6 V, electrolyte temperature of 23 鈩，

本文編號：1944576