本文選題：砷化鎵納米線陣列 + 感應(yīng)耦合等離子刻蝕　； 參考：《東華理工大學(xué)》2015年碩士論文

【摘要】：砷化鎵(GaAs)納米線陣列負電子親和勢光陰極因其較高的量子效率,較低的暗電流,良好的長波響應(yīng),禁帶寬度較窄等特點,成為最有前景的光電發(fā)射材料之一,廣泛應(yīng)用在微光夜視,高能光電倍增管等領(lǐng)域,將有機會成為下一代電子加速器電子源。近些年國內(nèi)外對GaAs光陰極薄膜結(jié)構(gòu)的優(yōu)化和改進已經(jīng)進行了大量的研究,同時在納米線陣列結(jié)構(gòu)的特性研究方面也取得了重大的進展,但是對GaAs納米線陣列光陰極的研究工作還鮮有報道。基于此,本文對GaAs納米線陣列光陰極制備工藝及優(yōu)化,性能表征測試,理論模型仿真等方向展開研究。本文采用感應(yīng)耦合等離子(ICP)刻蝕法制備GaAs納米線陣列、變組分AlGaAs納米線陣列,分析ICP刻蝕法制備GaAs納米線陣列頂部出現(xiàn)剝離現(xiàn)象的原因,并對制備工藝進行了優(yōu)化;利用掃描電子顯微鏡,微區(qū)光致發(fā)光譜,漫反射譜等研究了GaAs納米線陣列光陰極的光學(xué)特性,發(fā)現(xiàn)其反射率遠低于薄膜材料結(jié)構(gòu),光的“捕獲效應(yīng)”明顯。GaAs納米線陣列光陰極微區(qū)光致發(fā)光譜的波峰像近紅外波段偏移,表明其結(jié)構(gòu)的禁帶寬度變窄,對長波吸收更好。在實驗的基礎(chǔ)上,針對GaAs納米線陣列光陰極的性能表征測試,根據(jù)Spicer提出的“三步走”光電發(fā)射模型,建立GaAs納米線陣列光陰極的光電發(fā)射模型,通過三維仿真軟件,對其進行理論分析,研究入射光的角度,入射光的波長,納米線直徑對GaAs納米線陣列光陰極的影響。仿真結(jié)果表明隨著入射光與垂直方向夾角的增大,GaAs納米線陣列光陰極的光譜響應(yīng)先增大后減小,這個特性與薄膜結(jié)構(gòu)有很大的不同,而且GaAs納米線陣列光陰極具有比薄膜材料更高的光譜效應(yīng)。
[Abstract]:Because of its high quantum efficiency, low dark current, good long wave response and narrow band gap, GaAs nanowire array photocathode has become one of the most promising photoemission materials. Widely used in low-light night vision, high-energy photomultiplier tubes and other fields, there will be a chance to become the next generation electron accelerator electron source. In recent years, a great deal of research has been done on the optimization and improvement of GaAs thin film structure, and great progress has been made in the study of the characteristics of nanowire arrays. However, there are few reports on the photocathode of GaAs nanowire arrays. Based on this, the preparation process and optimization of photocathode for GaAs nanowire array, performance characterization test, theoretical model simulation and so on are studied in this paper. In this paper, GaAs nanowire arrays and AlGaAs nanowire arrays with variable components were prepared by inductively coupled plasma etching. The causes of the peeling at the top of GaAs nanowire arrays prepared by ICP etching were analyzed, and the preparation process was optimized. The optical properties of GaAs nanowire array photocathode were studied by scanning electron microscope, microphotoluminescence and diffuse reflectance spectra. The reflectivity of the photocathode was much lower than that of the thin film structure. The "capture effect" of light is obvious. The near infrared band migration of photoluminescence spectrum in photocathode microregion of GaAs nanowire array shows that the band gap of the structure becomes narrower and the absorption of long wave is better. Based on the experiment, according to the three-step photoemission model proposed by Spicer, the photoemission model of GaAs nanowire array photocathode is established according to the performance characterization test of GaAs nanowire array photocathode, and the three-dimensional simulation software is used to simulate the photoemission model of GaAs nanowire array photocathode. The influence of the angle of incident light, the wavelength of incident light and the diameter of nanowire on the photocathode of GaAs nanowire array is studied. The simulation results show that the spectral response of photocathode of GaAs nanowire array first increases and then decreases with the increase of the angle between incident light and vertical direction, which is very different from the structure of the thin film. Moreover, the photocathode of GaAs nanowire array has higher spectral effect than the thin film material.
【學(xué)位授予單位】：東華理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ133.51;TB383.1

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