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單斜氧化鋯晶體壓痕的分子動力學模擬研究

發(fā)布時間:2018-05-09 02:30

  本文選題:分子動力學 + 單斜氧化鋯; 參考:《太原理工大學學報》2017年06期


【摘要】:利用分子動力學方法模擬研究了單斜氧化鋯晶體在不同晶面和不同加載速率時壓入的變形行為,并采用配位數(shù)方法分析了不同壓痕深度下基體原子組態(tài)和位錯的變化情況,比較了不同晶面壓痕的載荷-位移曲線和變形行為。結果表明,三個不同晶面壓入時單斜氧化鋯晶體呈現(xiàn)出3種不同的滑移面;(100)和(001)面的壓痕形貌分別表現(xiàn)出pile-up和sink-in現(xiàn)象,且在這兩個面的壓入響應均出現(xiàn)載荷-位移曲線的間斷波動。對(001)面不同加載速率壓痕的研究結果表明在低速率加載時應力馳豫現(xiàn)象對基體應變硬化與載荷波動現(xiàn)象影響顯著。
[Abstract]:The deformation behavior of monoclinic zirconia crystal under different crystal faces and loading rates was simulated by molecular dynamics method. The changes of matrix atomic configuration and dislocation at different indentation depths were analyzed by coordination number method. The load-displacement curves and deformation behaviors of different grain face indentation were compared. The results show that the indentation morphologies of the three different faces of monoclinic zirconia crystals show three different slip planes (100) and the indentation surfaces of the two surfaces show the phenomenon of pile-up and sink-in, respectively. The load-displacement curve fluctuates intermittently in the pressure-input response of both surfaces. The results of indentation at different loading rates on the surface show that stress relaxation has a significant effect on the strain hardening and load fluctuation of the matrix under low rate loading.
【作者單位】: 太原理工大學應用力學與生物醫(yī)學工程研究所;太原科技大學應用科學學院;
【基金】:國家自然科學基金資助項目(11390362)
【分類號】:TQ174.1

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1 王麗娜;王海霞;牛r,

本文編號:1864179


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