發(fā)布時(shí)間：2018-04-29 04:34

  本文選題：氮化硅陶瓷 + 材料去除率��； 參考：《江南大學(xué)》2017年碩士論文

【摘要】：隨著新型陶瓷材料的不斷發(fā)展,氮化硅陶瓷材料以其優(yōu)良的性能在工業(yè)生產(chǎn)中得到越來越多的應(yīng)用;但是這種陶瓷材料本身的硬度比較高,在對其表面進(jìn)行超精密加工時(shí),一般的表面加工技術(shù)容易在陶瓷材料的表面產(chǎn)生各種表面缺陷,很難獲得高質(zhì)量的加工表面,而化學(xué)機(jī)械拋光技術(shù)由于其加工過程的高效率、加工表面的高質(zhì)量等優(yōu)點(diǎn),成為了對氮化硅陶瓷材料表面進(jìn)行超精密加工的極佳方式。超聲精細(xì)霧化施液拋光技術(shù)不僅能夠?qū)崿F(xiàn)傳統(tǒng)化學(xué)機(jī)械拋光技術(shù)的優(yōu)點(diǎn),而且還能夠減少加工成本,避免資源的浪費(fèi)。本文采用超聲波精細(xì)霧化施液拋光技術(shù)對氮化硅陶瓷基體進(jìn)行超精密加工,對拋光液成分、霧化拋光過程中的工藝參數(shù)以及霧化拋光氮化硅陶瓷基體的材料去除機(jī)理進(jìn)行了研究與分析,為工業(yè)生產(chǎn)中氮化硅陶瓷基體的超精密加工工藝奠定理論基礎(chǔ)。(1)對本課題在試驗(yàn)過程中用到的霧化拋光系統(tǒng)進(jìn)行了介紹研究,研究了拋光液中的單因素成分在拋光過程中對拋光效果的影響,以氮化硅陶瓷的材料去除率和拋光后基體的表面粗糙度為評價(jià)指標(biāo),通過單因素試驗(yàn)篩選出拋光液中各個(gè)成分因素對拋光氮化硅陶瓷基體結(jié)果影響的最優(yōu)值。(2)對所用拋光液的磨料質(zhì)量分?jǐn)?shù)、氧化劑質(zhì)量分?jǐn)?shù)、pH值大小等成分參數(shù)利用正交試驗(yàn)進(jìn)行了優(yōu)化,分析了拋光液中各成分值的大小對霧化拋光氮化硅陶瓷材料拋光結(jié)果的影響以及霧化拋光過程中的材料去除機(jī)理。優(yōu)化的拋光液成分組合是二氧化硅磨料的濃度為6 wt%,氧化劑雙氧水的含量為1 wt%,pH值為7。(3)在其他工藝參數(shù)一定的情況下,分別研究了霧液流量、拋光壓力和拋光盤轉(zhuǎn)速等三個(gè)工藝參數(shù)在單因素的試驗(yàn)條件下對霧化拋光氮化硅陶瓷基體拋光效果的影響,利用正交試驗(yàn)對三個(gè)工藝參數(shù)組合進(jìn)行了優(yōu)化并得到霧化拋光效果最好的一組工藝參數(shù)組合,即當(dāng)拋光壓力10.5 psi,霧液流量12.5 ml/min,拋光盤轉(zhuǎn)速80 r/min,霧化拋光氮化硅陶瓷基體的拋光效果最好。(4)在各種試驗(yàn)條件不變的情況下,用精細(xì)霧化化學(xué)機(jī)械拋光方法和傳統(tǒng)的化學(xué)機(jī)械拋光方法分別對氮化硅陶瓷基體進(jìn)行超精密加工,并對比兩種拋光方法下的試驗(yàn)結(jié)果。結(jié)果表明,使用傳統(tǒng)的化學(xué)機(jī)械拋光方法進(jìn)行加工時(shí)的拋光速率略高于精細(xì)霧化拋光方法的拋光速率,且兩種方法拋光后氮化硅陶瓷基體的表面質(zhì)量相差不大,但是霧化拋光所用拋光液用量僅為傳統(tǒng)拋光所用拋光液的1/8。
[Abstract]:With the development of new ceramic materials, silicon nitride ceramic materials have been used more and more in industrial production because of their excellent properties. General surface processing technology is easy to produce various surface defects on the surface of ceramic materials, and it is difficult to obtain high quality machined surfaces. However, chemical mechanical polishing technology has the advantages of high efficiency in machining process and high quality of machined surfaces. It has become an excellent way of ultra-precision machining of silicon nitride ceramic surface. Ultrasonic fine atomization polishing technology can not only realize the advantages of traditional chemical mechanical polishing technology, but also reduce the processing cost and avoid the waste of resources. In this paper, the ultra-precision machining of silicon nitride ceramic substrate was carried out by using ultrasonic fine atomization and liquid polishing technology. The process parameters and material removal mechanism of atomized polishing silicon nitride ceramic substrate were studied and analyzed. In this paper, the atomization polishing system used in the experiment is introduced and studied, which lays a theoretical foundation for the ultra-precision machining process of silicon nitride ceramic substrate in industrial production. The effect of single factor composition in polishing solution on polishing effect was studied. The material removal rate of silicon nitride ceramics and the surface roughness of polished matrix were used as the evaluation index. Through single factor test, the optimum value of the influence of each component factor in polishing solution on the results of polishing silicon nitride ceramic matrix was obtained. The mass fraction and pH value of oxidant were optimized by orthogonal test. The effect of the value of each component in the polishing liquid on the polishing results of silicon nitride ceramic materials and the material removal mechanism in the atomization polishing process were analyzed. The optimized composition of polishing liquid is that the concentration of silica abrasive is 6 wt, the content of oxidizer and hydrogen peroxide is 1 wtand the pH value is 7. 3) under the condition of certain other technological parameters, the flow rate of fog liquid is studied separately. The effect of three process parameters, such as polishing pressure and rotating speed of polishing disc, on the polishing effect of silicon nitride ceramic substrate was studied under the condition of single factor test. The combination of three process parameters was optimized by orthogonal test and a group of process parameters with the best effect of atomization polishing was obtained. That is, when the polishing pressure is 10.5 psii, the flow rate of the mist is 12.5 ml / min, the rotating speed of the diskette is 80 r / min, the polishing effect of atomized polishing silicon nitride ceramic substrate is the best. Ultraprecision machining of silicon nitride ceramic substrate was carried out by using fine atomization chemical mechanical polishing method and traditional chemical mechanical polishing method, and the experimental results under the two polishing methods were compared. The results show that the polishing rate of traditional chemical mechanical polishing method is slightly higher than that of fine atomization polishing method, and the surface quality of silicon nitride ceramic substrate after polishing by the two methods is not different. But the amount of polishing liquid used in atomization polishing is only 1 / 8 of that used in traditional polishing.
【學(xué)位授予單位】：江南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TQ174.6

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