本文選題：晶硅切割廢砂漿 + 真空碳化　； 參考：《海南大學(xué)》2015年碩士論文

【摘要】：光伏產(chǎn)業(yè)晶硅切割廢砂漿的傳統(tǒng)回收工藝復(fù)雜且高純硅的分離難度大、回收率低。而將廢料提純后直接制備SiC及其復(fù)合材料不僅方法簡單、有效避開了硅難于分離的問題,且廢料利用充分、制品多樣化。 本文以光伏產(chǎn)業(yè)晶硅切割廢砂漿為主要原料,在通過物理和化學(xué)方法測定其組分含量的基礎(chǔ)上,確定了Si/C配比。利用真空碳化法制備了SiC粉末。探究了真空熱處理溫度、無機碳源種類、除碳處理等因素對產(chǎn)物粉末的物相組成、微觀組織及粒徑分布的影響。研究表明,在900-1100℃溫度范圍,隨著反應(yīng)溫度的升高,Si粉與活性炭的碳化反應(yīng)越來越完全,并在1100℃完全生成了SiC粉末。繼續(xù)升溫,X射線衍射峰的強度逐漸增高,SiC產(chǎn)物粉末的粒度越來越大。此外,不同碳源在相同條件的碳化反應(yīng)結(jié)果表明,活性炭作為碳源比石墨效果更佳。 采用放電等離子燒結(jié)的方法制備了SiC陶瓷材料。探究了球磨時間、燒結(jié)溫度以及燒結(jié)助劑等因素對SiC陶瓷密度、力學(xué)性能等的影響,并從放電等離子燒結(jié)過程、材料的物相組成、顯微結(jié)構(gòu)等方面對其進行分析。研究表明,球磨時間5h效果最佳,但引入的雜質(zhì)會導(dǎo)致樣品難以燒結(jié)。SiC在燒結(jié)過程中經(jīng)歷了膨脹、反應(yīng)、再次膨脹、致密化、穩(wěn)定等5個過程。Al2O3燒結(jié)助劑加入量10w%、溫度1800℃是燒結(jié)SiC致密陶瓷材料的合理條件,該條件下制備的SiC陶瓷相對密度為95.18%,維氏硬度約為HV2100。
[Abstract]:The traditional recovery technology of silicon cut waste mortar in photovoltaic industry is complex, the separation of high purity silicon is difficult and the recovery rate is low. The method of preparing SiC and its composites directly after purification of waste materials is not only simple, but also avoids the problem that silicon is difficult to separate, and the waste materials are fully utilized and the products are diversified. In this paper, using silicon cut waste mortar in photovoltaic industry as the main raw material, the proportion of Si/C was determined on the basis of physical and chemical methods. SiC powder was prepared by vacuum carbonization. The effects of vacuum heat treatment temperature, inorganic carbon source type and carbon removal treatment on the phase composition, microstructure and particle size distribution of the powder were investigated. The results show that at 900-1100 鈩，

本文編號：1812108