ZnO納米柱結(jié)構(gòu)的制備與改性及其在太陽(yáng)能電池中的應(yīng)用
發(fā)布時(shí)間:2018-04-17 17:31
本文選題:氧化鋅 + 納米柱。 參考:《青島科技大學(xué)》2015年碩士論文
【摘要】:化石能源的過(guò)度消耗帶來(lái)了嚴(yán)重的能源和環(huán)境問(wèn)題,太陽(yáng)能電池作為可再生清潔能源可將太陽(yáng)能直接轉(zhuǎn)化為電能,從而成為人們關(guān)注的焦點(diǎn)。在太陽(yáng)能結(jié)構(gòu)中,電子傳輸層具有非常重要的作用,收集光吸收層產(chǎn)生的光生電子并將電子傳輸?shù)綄?dǎo)電電極,對(duì)器件的光電轉(zhuǎn)化效率有直接影響。近年來(lái)研究較多的電子傳輸層材料是多孔納米Ti02顆粒,而ZnO具有高穩(wěn)定性,優(yōu)異的光電性能,良好的形貌可控性等優(yōu)點(diǎn)而可以作為取代TiO2的材料。同時(shí),ZnO的電子遷移率高且易于制備成一維納米柱結(jié)構(gòu),可用作太陽(yáng)能電池的電子傳輸層。因此,對(duì)ZnO納米結(jié)構(gòu)的研究成為人們優(yōu)化太陽(yáng)能電池結(jié)構(gòu)的熱點(diǎn)之一。本文對(duì)應(yīng)用太陽(yáng)能電池的ZnO納米柱的制備工藝進(jìn)行探討,在優(yōu)化工藝條件下制備得到形貌整齊、尺寸均勻的ZnO納米柱陣列,在ZnO納米柱陣列基礎(chǔ)上,制備了ZnO:Al陣列和ZnO/ZnMgO納米結(jié)構(gòu),分別作為電子傳輸層材料組裝太陽(yáng)能電池器件,并對(duì)ZnO納米柱及優(yōu)化結(jié)構(gòu)和電池器件進(jìn)行表征和分析。得到的主要結(jié)果如下:Ⅰ.ZnO納米柱和納米管陣列的制備及光電性能表征采用水浴法在ZnO種子層上生長(zhǎng)ZnO納米柱陣列,從種子液濃度、種子膜層數(shù)、生長(zhǎng)液濃度、生長(zhǎng)時(shí)間以及生長(zhǎng)液是否添加PEI對(duì)ZnO納米柱形貌的影響進(jìn)行了研究,得出0.2 mol/L的種子液、種子膜層數(shù)為5層時(shí)得到的ZnO種子層在不添加PEI、生長(zhǎng)液濃度為0.02 mol/L、生長(zhǎng)3h時(shí)能夠獲得整齊的ZnO納米柱陣列,納米柱沿c軸取向生長(zhǎng),尺寸均勻,直徑約150 nm。采用二次水浴生長(zhǎng)的方式刻蝕得到ZnO納米管,二次水浴溫度為50℃、水浴時(shí)間為三小時(shí)時(shí)形成了中空的納米管結(jié)構(gòu),管壁較薄約為20 nm。采用兩步法制備結(jié)構(gòu)為Ag/P3HT/CH3NH3PbI3/ZnO/FTO的鈣鈦礦太陽(yáng)能電池器件。通過(guò)測(cè)試電池器件的伏安特性曲線來(lái)考察電池性能,得到ZnO最佳水浴生長(zhǎng)條件為75 rmin,器件的最高光轉(zhuǎn)化效率為4.72%,填充因子為0.43。Ⅱ.ZnO:Al納米柱陣列的制備及光電性能表征在ZnO納米柱陣列基礎(chǔ)上,采用水浴法制備了不同摻雜比例的ZnO:Al納米柱陣列并對(duì)其形貌、結(jié)構(gòu)和元素組成進(jìn)行表征。摻雜后,納米柱陣列光透過(guò)率提高且表面方塊電阻下降。將ZnO:Al納米柱陣列作為電子傳輸層應(yīng)用于PSCs器件中,在低摻雜濃度(1%)時(shí)得到最佳器件性能,光轉(zhuǎn)化效率達(dá)到5.78%,填充因子提高到0.54。Ⅲ.ZnO/ZnMgO納米結(jié)構(gòu)的制備及光電性能表征利用溶膠凝膠法在ZnO納米柱表面負(fù)載ZnMgO層,形成類“核殼結(jié)構(gòu)”的ZnO/ZnMgO納米結(jié)構(gòu)。實(shí)驗(yàn)證明:ZnMgO層的光學(xué)禁帶寬度要略大于ZnO納米柱。將ZnO/ZnMgO納米結(jié)構(gòu)作為電子傳輸層應(yīng)用于PSCs器件中,ZnO/Zn0.95Mg0.05O基電池器件的最高光轉(zhuǎn)化效率達(dá)到7.65%,填充因子提高到0.58。
[Abstract]:The excessive consumption of fossil energy has brought serious energy and environmental problems. As a renewable and clean energy, solar cells can directly convert solar energy into electric energy, which has become the focus of attention.The electron transport layer plays a very important role in the solar energy structure. Collecting the photogenerated electrons from the optical absorption layer and transmitting the electrons to the conductive electrode have a direct impact on the photoelectric conversion efficiency of the device.In recent years, more and more electron transport layer materials are porous nanometer Ti02 particles. ZnO can be used as a substitute for TiO2 because of its high stability, excellent optoelectronic properties and good morphology controllability.At the same time, ZnO can be used as the electron transport layer of solar cells because of its high electron mobility and easy preparation of one-dimensional nanocolumn structure.Therefore, the study of ZnO nanostructures has become one of the hot spots in the optimization of solar cell structure.In this paper, the preparation process of ZnO nano-column with solar cells is discussed. Under the optimized conditions, the ZnO nanoscale arrays with neat morphology and uniform size are prepared. On the basis of the ZnO nanoscale column array, the structure of the ZnO nanocolumn array is obtained.ZnO:Al arrays and ZnO/ZnMgO nanostructures were prepared, respectively, as electron transport layer materials to assemble solar cell devices. The ZnO nanocolumns, optimized structures and battery devices were characterized and analyzed.The main results obtained are as follows: 鈪,
本文編號(hào):1764568
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