本文選題：納米摻碳氧化鋁薄膜 + 發(fā)光機(jī)理��； 參考：《新疆大學(xué)》2015年碩士論文

【摘要】：Al2O3:C晶體作為傳統(tǒng)輻射劑量材料已廣泛應(yīng)用于輻射劑量學(xué)領(lǐng)域,通過(guò)電化學(xué)法在草酸溶液中也可以制備出含有碳雜質(zhì)的納米多孔氧化鋁薄膜,本論文主要探究這種納米摻碳氧化鋁薄膜的發(fā)光機(jī)理以及熱釋光、光釋光、輻射發(fā)光特性。在草酸溶液中通過(guò)陽(yáng)極氧化法制備納米摻碳氧化鋁薄膜,利用掃描電鏡(SEM)觀測(cè)樣品的表面、截面形貌,結(jié)果顯示氧化鋁薄膜呈現(xiàn)均勻有序的多孔狀結(jié)構(gòu),孔徑在30~100nm之間,X射線能譜(EDS)和傅里葉變換紅外光譜(FTIR)測(cè)試表明制備的納米多孔氧化鋁薄膜中含有草酸雜質(zhì)且薄膜在500℃退火后草酸雜質(zhì)沒(méi)有全部分解;納米摻碳氧化鋁薄膜的形成機(jī)理分析表明在薄膜制備過(guò)程中引入了三種缺陷,分別為F+、F和草酸雜質(zhì)相關(guān)的缺陷,用波長(zhǎng)330nm的光激發(fā)薄膜,在約420nm處出現(xiàn)很強(qiáng)的發(fā)光峰,此發(fā)光峰為復(fù)合發(fā)光峰,借助高斯擬合研究表明薄膜發(fā)光是由F+、F和草酸雜質(zhì)相關(guān)發(fā)光中心引起,且F中心起主導(dǎo)作用。納米摻碳氧化鋁薄膜熱釋光測(cè)試結(jié)果表明:500℃退火后的樣品在低溫(約80℃)和高溫(約310℃)出現(xiàn)兩個(gè)熱釋光峰外,在190℃也出現(xiàn)熱釋光峰,而其它溫度下退火的樣品均在低溫和高溫出現(xiàn)兩個(gè)熱釋光峰,600℃退火后的樣品在約300℃處的發(fā)光峰最強(qiáng);對(duì)熱釋光曲線在200~500℃間的面積進(jìn)行積分,得到未退火,300、400、500、600℃退火后的樣品熱釋光劑量響應(yīng)曲線在劑量1~10Gy范圍內(nèi)具有很好的線性性,在劑量范圍10~120Gy內(nèi)出現(xiàn)超線性。光釋光測(cè)試表明:納米摻碳氧化鋁薄膜光釋光特性優(yōu)異,600℃退火后薄膜的光釋光最強(qiáng),不同溫度退火后的薄膜光釋光劑量響應(yīng)曲線在1~200Gy整體上具有很好的劑量線性關(guān)系。對(duì)晶體Al2O3:C輻射發(fā)光特性做了數(shù)值模擬,模擬結(jié)果能為進(jìn)一步的實(shí)驗(yàn)提供參考。這些都為納米摻碳氧化鋁薄膜成為輻射劑量材料提供了足夠的可能,也為進(jìn)一步的研究打下堅(jiān)定的基礎(chǔ)。
[Abstract]:Al2O3:C crystal has been widely used in the field of radiation dosimetry as a traditional radiation dose material. Nanometer porous alumina films containing carbon impurities can also be prepared by electrochemical method in oxalic acid solution.In this paper, the luminescence mechanism, thermoluminescence, photoluminescence and luminescence characteristics of the nano-carbon doped alumina thin films are studied.Carbon doped alumina films were prepared by anodizing method in oxalic acid solution. The surface and cross-section morphology of the samples were observed by scanning electron microscopy (SEM). The results showed that the alumina thin films showed a homogeneous and ordered porous structure.X-ray energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) measurements show that the nano-porous alumina films contain oxalic acid impurities and the oxalic acid impurities are not completely decomposed after annealing at 500 鈩，

本文編號(hào)：1735053