本文選題：氧化鋁陶瓷　切入點(diǎn)：基片　出處：《中國陶瓷》2017年07期

【摘要】：為了研究不同燒結(jié)工藝對電容式高溫壓力傳感器用氧化鋁陶瓷基片的影響,以納米α-Al_2O_3為主要原料,加入ZrO_2、MgO和Y_2O_3等粉料作為燒結(jié)助劑,采用流延成型、等靜壓成型和氣氛保護(hù)無壓燒結(jié)技術(shù)制備了氧化鋁陶瓷基片。分別對試樣的相對密度、抗彎強(qiáng)度、硬度及斷裂韌性進(jìn)行測試,并利用掃描電鏡(SEM)觀察其顯微組織形貌。結(jié)果表明:陶瓷基片的燒結(jié)不宜接觸O_2,因此在燒結(jié)過程中應(yīng)選用流動高純N_2對其進(jìn)行氣氛保護(hù)。為防止試樣燒結(jié)后變形翹曲,基片在裝載時應(yīng)適度施加壓蓋,提高平整度。此陶瓷基片的理想燒結(jié)溫度約為1550℃,對應(yīng)試樣的相對密度、抗彎強(qiáng)度、硬度及斷裂韌性數(shù)值分別達(dá)到了98.8%、766 MPa、17.2 GPa及4.2 MPa·m~(1/2)。1550℃燒結(jié)試樣顯微組織呈現(xiàn)韌窩狀,該結(jié)構(gòu)有助于提高陶瓷基體的致密度及強(qiáng)韌化程度。
[Abstract]:In order to study the effect of different sintering processes on alumina ceramic substrates for capacitive high temperature pressure sensors, 偽 -Al _ 2O _ 3 nanocrystalline was used as the main raw material, and ZrO _ 2MgO and Y_2O_3 were added as sintering auxiliaries.Alumina ceramic substrates were prepared by isostatic pressing and atmospheres-protected pressureless sintering.The relative density, bending strength, hardness and fracture toughness of the samples were measured, and the microstructure and morphology of the samples were observed by scanning electron microscopy (SEM).The results show that the sintering of ceramic substrates is not suitable for contact with O _ 2s. Therefore, flow high-purity N _ (2) should be used to protect the ceramic substrates in atmosphere during the sintering process.In order to prevent the specimen from warping after sintering, the substrate should be loaded with a proper pressure cover to improve the flatness.The ideal sintering temperature of the ceramic substrate is about 1550 鈩，

本文編號：1689964