本文選題：射頻模塊　切入點(diǎn)：影響因素　出處：《電子科技大學(xué)》2015年碩士論文

【摘要】：與傳統(tǒng)的封裝工藝技術(shù)相比,低溫共燒陶瓷(LTCC)技術(shù)因其具有優(yōu)良的高頻特性、小線寬和低阻抗而倍受矚目,但其工藝過程復(fù)雜,容易造成缺陷。造成缺陷的影響因素很多,研究主要影響因素與缺陷的關(guān)系是準(zhǔn)確控制工藝參數(shù)的基礎(chǔ),也是制造出高質(zhì)量產(chǎn)品的重要前提。本文針對某種射頻模塊,運(yùn)用理論分析與仿真實(shí)驗(yàn)相結(jié)合的方法對LTCC技術(shù)成型過程中的缺陷進(jìn)行分析,建立成型缺陷主要影響因素與缺陷評價(jià)指標(biāo)之間的關(guān)系模型,為工藝參數(shù)的優(yōu)化打下基礎(chǔ),提高射頻模塊的成型質(zhì)量。為此本文從以下幾個(gè)方面進(jìn)行了研究:(1)成型缺陷的仿真分析。根據(jù)試制樣件中存在的缺陷問題,檢測出四種主要成型缺陷:微通道變形、基板翹曲、層間垂直互聯(lián)錯(cuò)位、共晶焊接空洞,通過理論分析,研究缺陷的形成機(jī)制。根據(jù)成型缺陷的形成環(huán)境,利用ANSYS Workbench軟件完成對四種成型缺陷的有限元仿真分析。(2)成型缺陷影響因素分析。根據(jù)缺陷對樣件成型質(zhì)量和功能特性的影響程度,提取缺陷的尺寸特征、紋理特征、形狀特征等,確定缺陷的目標(biāo)函數(shù)。利用正交試驗(yàn)方法,完成多組工藝條件下的缺陷仿真分析,從各影響因素中提取成型缺陷的主要影響因素。(3)成型缺陷與工藝參數(shù)關(guān)系模型的建立。在識別出成型缺陷主要影響因素的基礎(chǔ)上,進(jìn)行多水平主要影響因素的正交試驗(yàn),而其它次要影響因素選取對成型質(zhì)量有利的值,基于響應(yīng)面法以及麥夸特法,建立起成型缺陷目標(biāo)函數(shù)與主要影響因素之間的關(guān)系模型。(4)關(guān)系模型準(zhǔn)確性的實(shí)驗(yàn)驗(yàn)證。為確保建模方法和仿真結(jié)果的正確性,在不同的工藝條件下試制樣件,利用相應(yīng)的檢測方法對成型缺陷進(jìn)行檢測。通過實(shí)驗(yàn)檢測結(jié)果與模型理論計(jì)算結(jié)果相比較,表明仿真分析結(jié)果可以接受,關(guān)系模型的準(zhǔn)確度優(yōu)于80%。
[Abstract]:Compared with the traditional packaging technology, low temperature co-fired ceramic LTCCs have attracted much attention because of their excellent high frequency characteristics, small linewidth and low impedance. However, the process is complex and easy to cause defects. The study of the relationship between the main influencing factors and the defects is the basis of accurate control of process parameters and an important prerequisite for the manufacture of high quality products. This paper analyzes the defects in the forming process of LTCC technology by combining theoretical analysis with simulation experiment, and establishes the relationship model between the main influencing factors of forming defects and the evaluation index of defects, which lays a foundation for the optimization of process parameters. In order to improve the forming quality of RF module, this paper studies the simulation analysis of the forming defects from the following aspects. According to the defects existing in the prototype, four main forming defects are detected: microchannel deformation, substrate warpage, Interlaminar vertical interconnection, eutectic welding voids, through theoretical analysis, the formation mechanism of defects. According to the forming environment of forming defects, ANSYS Workbench software is used to analyze the influencing factors of four kinds of forming defects. According to the influence degree of defects on forming quality and function, the size feature and texture feature of defects are extracted. Shape features, etc., to determine the objective function of defects. Using orthogonal test method, complete the simulation analysis of defects under multi-group process conditions. The relationship model between molding defects and process parameters was established by extracting the main influencing factors of forming defects from various influencing factors. Based on the identification of the main influencing factors of forming defects, orthogonal experiments were carried out on the main influencing factors at many levels. Other secondary factors are selected to benefit the molding quality, based on the response surface method and the McQuat method. In order to ensure the correctness of modeling method and simulation results, samples were manufactured under different technological conditions. By comparing the experimental results with the theoretical results, the simulation results are acceptable, and the accuracy of the relational model is better than that of the 80th model.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ174.6

【參考文獻(xiàn)】

相關(guān)期刊論文 前3條

1 吳申立;薄膜金屬化LTCC基板的薄膜阻礙層對共晶焊的影響[J];電子工藝技術(shù);2001年02期

2 陳波;丁榮崢;明雪飛;高娜燕;;共晶焊料焊接的孔隙率研究[J];電子與封裝;2012年11期

3 謝廉忠;;微波組件用帶腔體LTCC基板制造技術(shù)[J];現(xiàn)代雷達(dá);2006年06期

，

本文編號：1657232