本文選題：YBO_3:Eu~(3+)　切入點(diǎn)：Y_3BO_6:Eu~(3+)　出處：《浙江大學(xué)》2015年碩士論文

【摘要】：能源緊缺和環(huán)境污染是制約社會發(fā)展和提高人類生活質(zhì)量的瓶頸,因此發(fā)展節(jié)能器件和清潔能源具有迫切而重大的需求。太陽能是取之不盡,用之不竭的清潔能源。稀土發(fā)光材料和半導(dǎo)體材料是人們利用太陽能的主要載體,研究這類光電材料引起了研究人員很大的興趣。材料的光電性能往往受材料的體相和界面結(jié)構(gòu)的影響,因此,發(fā)展合適的方法研究材料的結(jié)構(gòu)對其光電性能的影響具有重要的科學(xué)意義。另外,發(fā)展簡單便宜的方法制備高質(zhì)量的薄膜是材料器件化應(yīng)用的關(guān)鍵。本論文以具有豐富結(jié)構(gòu)的硼酸鹽和具有紫外一可見光吸收的WO3為研究對象,以Eu3+作為發(fā)光源和結(jié)構(gòu)探針,發(fā)展簡單、廉價(jià)及易放大化的電沉積方法制備了Eu3+離子摻雜和修飾的硼酸鹽和WO3薄膜,探討了制備條件對薄膜的組成、結(jié)構(gòu)及光電化學(xué)性能的影響,初步研究了光電性能增強(qiáng)的可能機(jī)理。本論文的內(nèi)容分為以下兩個(gè)部分： (1)電沉積制備YBO3:Eu3+和Y3BO6:Eu3+薄膜及其發(fā)光性能。在含B3+、Y3+、Eu3+離子的溶液體系中,改變沉積電位,分別得到了YBO3:Eu3+和Y3BO6:Eu3+薄膜。通過IR、XRD.SEM及熒光發(fā)光等方法對兩種硼酸鹽進(jìn)行了表征,探討了其形成過程的機(jī)理和銪離子摻雜對其發(fā)光性能的影響。熒光發(fā)射光譜表明,Y3BO6:Eu3+薄膜的5D0→7F2躍遷比5D0→7F1躍遷強(qiáng),即紅橙比較大,這與Y3B06晶體結(jié)構(gòu)的不對稱性相一致。Y3BO6:Eu3+(5mol%)在591nm處的最長熒光壽命為2.24ms,而YBO3:Eu3+(1mol%)的最長熒光壽命為3.78ms。 (2) WO3/Eu2(WO4)3復(fù)合薄膜的制備及其光電化學(xué)性能。在電沉積制備的W03薄膜表面上摻雜少量的Eu3+離子,煅燒后得到復(fù)合薄膜電極。XRD、SEM、EDS測試發(fā)現(xiàn)銪摻雜前后薄膜的晶體結(jié)構(gòu)和形貌發(fā)生了變化。Eu3+離子以Eu2(WO4)3形式覆蓋在WO3電極表面。光電化學(xué)測試表明,當(dāng)Eu2(WO4)3層厚度為13nm時(shí),WO3/Eu2(WO4)3復(fù)合電極的光電氧化水的性能最好,其光生電流密度是純W03薄膜的6.5倍,入射光電轉(zhuǎn)換效率(IPCE)和吸收光電轉(zhuǎn)換效率(APCE)分別是純W03薄膜的5.5倍和5.3倍。
[Abstract]:Energy shortage and environmental pollution are the bottleneck of restricting the development of society and improving the quality of human life. Therefore, the development of energy-saving devices and clean energy has an urgent and important need. Rare-earth luminescent materials and semiconductor materials are the main carriers of solar energy. The study of such optoelectronic materials is of great interest to researchers. The optoelectronic properties of materials are often affected by the bulk and interface structure of the materials, so, It is of great scientific significance to develop appropriate methods to study the effects of the structure of materials on their photoelectric properties. The development of simple and inexpensive methods for the preparation of high quality thin films is the key to the application of devices. In this thesis, the borate with rich structure and WO3 with UV-Vis absorption are studied, and Eu3 is used as the light source and structural probe. Borate and WO3 films doped and modified with Eu3 ions were prepared by a simple, inexpensive and scalable electrodeposition method. The effects of preparation conditions on the composition, structure and photochemical properties of the films were discussed. The possible mechanism of optoelectronic performance enhancement is preliminarily studied. The content of this thesis is divided into the following two parts:. YBO3:Eu3 and Y3BO6:Eu3 thin films were prepared by electrodeposition and their luminescence properties. The YBO3:Eu3 and Y3BO6:Eu3 thin films were obtained by changing the deposition potential in the solution system containing B _ 3O _ 3Y _ 3 EU _ 3 ion. The two borates were characterized by IR XRD.SEM and fluorescence luminescence. The mechanism of its formation and the effect of EU ~ (3 +) doping on its luminescence properties were discussed. The fluorescence emission spectra show that the 5D0 of Y3BO6: EU3 thin films. 鈫，

本文編號：1656341