本文選題：MPCVD　切入點(diǎn)：單晶金剛石　出處：《武漢工程大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：單晶金剛石擁有高硬度、高彈性模量、高熱導(dǎo)率、高耐磨耐腐蝕性等優(yōu)異性質(zhì),是一種制備加工工具的理想材料,尤其是在精密/超精密加工領(lǐng)域,單晶金剛石更是有著獨(dú)特的優(yōu)勢。微波等離子體化學(xué)氣相沉積(Microwave Plasma Chemical Vapor Deposition,MPCVD)技術(shù)被認(rèn)為是目前生長高質(zhì)量單晶金剛石的最佳選擇之一,在國外已有多家使用該技術(shù)進(jìn)行批量生產(chǎn)單晶金剛石的企業(yè)。相比之下,國內(nèi)受到設(shè)備和工藝的雙重困難,對CVD單晶金剛石的研究仍多數(shù)停留在實(shí)驗(yàn)室研究階段,使得生長速率和生長質(zhì)量難以達(dá)到工業(yè)化生產(chǎn)的要求。本研究利用國產(chǎn)的5kW MPCVD設(shè)備進(jìn)行了單晶金剛石生長工藝的研究,主要研究內(nèi)容如下:1.在CH_4/H_2氣氛中研究了甲烷濃度、沉積溫度、生長氣壓等因素對單晶金剛石生長速率和生長質(zhì)量的影響。2.分別研究了在CH_4/H_2氣氛中添加N_2,O_2,Ar對單晶金剛石生長的影響。3.在1.和2.的研究基礎(chǔ)上,進(jìn)行了大顆粒CVD單晶金剛石的生長。采用拉曼光譜儀、X射線衍射和光吸收光譜等手段對單晶金剛石的成分、結(jié)構(gòu)、結(jié)晶質(zhì)量等方面進(jìn)行表征。高性能實(shí)驗(yàn)裝置是合成高質(zhì)量單晶金剛石的保障,但是工藝條件的優(yōu)化也同樣重要。研究所用的MPCVD裝置雖然在性能上不如國外先進(jìn)裝置,但是經(jīng)過對工藝參數(shù)的研究和優(yōu)化,使用尺寸為7.0×7.0×0.3 mm~3的工具級CVD單晶金剛石作為籽晶,以較快速率(56μm/h)生長得到尺寸為8.3×8.3×2.0 mm~3的大單晶金剛石,產(chǎn)品質(zhì)量與籽晶的質(zhì)量相當(dāng)。
[Abstract]:Single crystal diamond with excellent properties such as high hardness, high modulus of elasticity, high thermal conductivity, high wear resistance and corrosion resistance is an ideal material for manufacturing tools, especially in the field of precision / ultra-precision machining. Microwave plasma chemical vapor deposition (MPCVD) technique is considered to be one of the best choice for the growth of high quality monocrystalline diamond. There are many enterprises abroad that use this technology to produce monocrystalline diamond in bulk. In contrast, the research on CVD single crystal diamond is still in the laboratory stage, because of the double difficulties of equipment and technology in our country. The growth rate and quality of monocrystalline diamond are difficult to meet the requirements of industrial production. In this study, the growth process of single crystal diamond was studied by using a domestic 5 kW MPCVD equipment. The main contents of the study were as follows: 1. The concentration of methane in CH_4/H_2 atmosphere was studied. Effects of deposition temperature, growth pressure and other factors on growth rate and quality of single crystal diamond. (2) the effect of adding N _ 2O _ 2A _ r into CH_4/H_2 atmosphere on growth of single crystal diamond was studied. The growth of large grain CVD single crystal diamond was carried out. The composition and structure of single crystal diamond were studied by means of Raman spectrometer X-ray diffraction and optical absorption spectrum. The high performance experimental device is the guarantee for the synthesis of high quality single crystal diamond, but the optimization of the process conditions is also important. Although the MPCVD device used in the research is inferior to the advanced equipment abroad in performance, However, through the study and optimization of the process parameters, using the tool grade CVD single crystal diamond with the size of 7.0 脳 7.0 脳 0.3 mm~3 as seed crystal, and growing at a faster rate of 56 渭 m / h, the large single crystal diamond with the size of 8.3 脳 8.3 脳 2.0 mm~3 was obtained, and the quality of the product was equal to that of the seed crystal.
【學(xué)位授予單位】：武漢工程大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ163

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