本文選題：AZO薄膜　切入點：AZO陶瓷靶材　出處：《浙江大學》2015年碩士論文　論文類型：學位論文

【摘要】：近年來,隨著半導體、計算機、液晶顯示、有機電致發(fā)光顯示、等離子體顯示器以及太陽能等產(chǎn)業(yè)的發(fā)展,透明導電氧化物薄膜隨之蓬勃發(fā)展起來。其中,應用最為廣泛的為ITO薄膜,但因其中的In為稀有元素,并且有毒,因此尋找無銦的透明導電薄膜材料顯得尤為重要。20世紀80年代發(fā)展起來的摻A1的ZnO薄膜(AZO)成為最有發(fā)展前景的材料,它具有與ITO薄膜相比擬的光電性質(zhì),并且具有來源廣泛、價格低廉、無毒、在H等離子體中穩(wěn)定等ITO薄膜所無法相比的優(yōu)點。本文利用脈沖激光沉積(PLD)的方法在玻璃襯底上沉積AZO薄膜,通過X射線衍射(XRD)、掃描電子顯微鏡(SEM)、光電子能譜(XPS)、四探針以及分光光度計等分析方法,對薄膜的物相結構、表面形貌、電學以及光學性能進行表征。針對PLD設備對靶材尺寸的要求,通過常壓燒結的方法制備了AZO陶瓷靶材,并研究了靶材質(zhì)量對薄膜性能的影響規(guī)律。研究結果表明,在1200℃下燒結3小時的AZO陶瓷靶材制備的AZO薄膜具有較好的電學和光學性能。因此后面的實驗中用到的靶材均是1200℃下燒結3小時的AZO陶瓷靶材。系統(tǒng)研究了靶材中Al2O3含量、襯底溫度以及沉積時間等參數(shù)對AZO薄膜的結晶質(zhì)量、電學和光學性能的影響規(guī)律,獲得了性能優(yōu)異的AZO薄膜。研究表明,薄膜最佳沉積條件為：激光能量為250 mj、靶材到襯底的距離為60mm、襯底溫度為150℃、沉積時間60分鐘、靶材中A1203含量2wt%。制備的薄膜的晶粒尺寸較大約為32.2 nm,電阻率最低為1.5×10-4Ω·cm,1000-2500 nm波長范圍平均近紅外反射率高達55.3%。
[Abstract]:In recent years, with the development of semiconductor, computer, liquid crystal display, organic electroluminescent display, plasma display, solar energy and other industries, transparent conductive oxide films have developed rapidly. The most widely used films are ITO films, but because in is rare and toxic, Therefore, it is very important to find transparent conductive thin films without indium. In 80s, the Al doped ZnO thin film developed in the 20th century has become the most promising material. It has the optoelectronic properties comparable to ITO thin films, and has a wide range of sources. In this paper, AZO thin films on glass substrates have been deposited by pulsed laser deposition method, which has the advantages of low price, non-toxic and stable in H plasma. The phase structure and surface morphology of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray diffraction (SEM), photoelectron spectroscopy (XPS), four-probe and spectrophotometer. According to the requirements of PLD equipment for target size, AZO ceramic target was prepared by atmospheric pressure sintering, and the influence of target quality on film properties was studied. The AZO films sintered at 1200 鈩，

本文編號：1618334