本文選題：光解水制氫　切入點：離子注入技術(shù)　出處：《科學(xué)通報》2017年25期 　論文類型：期刊論文

【摘要】：半導(dǎo)體光催化分解水制氫是一種裝置簡單,相對廉價可靠的能源利用方式.開發(fā)具有高光制氫效率的光電極材料一直是材料科學(xué)研究領(lǐng)域的熱點.目前的半導(dǎo)體光催化材料普遍面臨缺乏可見光吸收和載流子分離效率低的問題.這些問題導(dǎo)致目前光解水制氫電極材料的效率較低,達(dá)不到商業(yè)應(yīng)用的要求.因此,發(fā)展改性的光電極材料尤為重要.離子注入技術(shù)作為一種重要的半導(dǎo)體改性技術(shù),相對于傳統(tǒng)的化學(xué)摻雜方法具有諸多優(yōu)點.離子注入方法能夠保證注入離子的純度,能夠通過控制注入離子的能量和劑量從而控制注入雜質(zhì)的濃度和深度分布.離子注入技術(shù)可以使摻雜不受擴散系數(shù)和化學(xué)結(jié)合力等因素的限制,各種元素均可摻雜.因此,離子注入技術(shù)在光電極材料改性方面具有很大的應(yīng)用前景.本文首先介紹了光解水制氫及離子注入技術(shù)的基本原理,然后結(jié)合本課題組及其他學(xué)者的工作,綜述了目前離子注入技術(shù)改性光電極材料的特點和研究進展,最后展望了離子注入技術(shù)在光解水電極改性應(yīng)用的未來發(fā)展方向.
[Abstract]:Semiconductor photocatalytic decomposition of water for hydrogen production is a simple device. The development of photoelectrode materials with high efficiency of hydrogen production has been a hot spot in the field of material science. Currently semiconductor photocatalytic materials are generally faced with the lack of visible light absorption and current carrier. Problems with low separation efficiency. These problems lead to low efficiency of the current photodissociated water electrode materials for hydrogen production. Therefore, the development of modified photoelectrode materials is particularly important. Ion implantation technology as an important semiconductor modification technology, Compared with the traditional chemical doping method, the ion implantation method can guarantee the purity of the implanted ion. The concentration and depth distribution of impurity can be controlled by controlling the energy and dose of implanted ions. The ion implantation technique can make the doping not limited by the factors such as diffusion coefficient and chemical binding force, and all elements can be doped. Ion implantation technology has great application prospect in the modification of optoelectronic electrode materials. In this paper, the basic principles of photolysis water hydrogen production and ion implantation technology are introduced, and then combined with the work of our group and other scholars, The characteristics and research progress of photoelectrode material modified by ion implantation technology are reviewed. Finally, the future development of ion implantation technology in the modification of photodissociated water electrode is prospected.
【作者單位】： 武漢大學(xué)物理科學(xué)與技術(shù)學(xué)院武漢大學(xué)離子束功能材料研究中心;
【基金】：國家自然科學(xué)基金(11522543,11475129,51571153) 江蘇省自然科學(xué)基金(BK20161247,BK20141212) 湖北省自然科學(xué)基金(2016CFA080)資助
【分類號】：TB34;TQ116.2
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本文編號：1592547