本文關(guān)鍵詞： 石英晶片 剪切增稠拋光 拋光液轉(zhuǎn)速 工件傾斜角度 磨粒質(zhì)量分數(shù) 磨粒粒度　出處：《納米技術(shù)與精密工程》2017年03期 　論文類型：期刊論文

【摘要】：剪切增稠拋光(STP)是利用非牛頓流體拋光液在拋光過程中產(chǎn)生的剪切增稠效應實現(xiàn)工件表面高效、低損傷的拋光.本文以材料去除率和表面粗糙度作為評價指標;采用田口法對石英晶片剪切增稠拋光過程中的4個關(guān)鍵影響參數(shù):拋光液轉(zhuǎn)速、工件傾斜角度、磨粒粒度、磨粒質(zhì)量分數(shù)進行優(yōu)化實驗分析,得到最優(yōu)拋光參數(shù)組合以及各主要工藝參數(shù)對拋光效果的影響程度;通過實驗驗證了優(yōu)化結(jié)果的可靠性.對于材料去除率,工件傾斜角度的影響最明顯,拋光液轉(zhuǎn)速次之,再次是磨粒質(zhì)量分數(shù),磨粒粒度影響最小;對于表面粗糙度,拋光液轉(zhuǎn)速的影響最明顯,工件傾斜角度次之,再次是磨粒質(zhì)量分數(shù),磨粒粒度影響最小.通過信噪比平均響應分析,材料去除率優(yōu)化參數(shù)組合為:Al_2O_32 500#、磨粒質(zhì)量分數(shù)18%、拋光液轉(zhuǎn)速80 r/min、工件傾斜角度15°,石英晶片材料去除率最高達到12.25μm/h;石英晶片最佳表面粗糙度參數(shù)組合為:Al_2O_35 000#、磨粒質(zhì)量分數(shù)18%、拋光液轉(zhuǎn)速80 r/min、工件傾斜角度15°,拋光1 h后石英晶片表面粗糙度R_a由300.08 nm降低至4.26 nm.
[Abstract]:Shear thickening polishing (STP) is a kind of high efficiency and low damage polishing, which is realized by the shear thickening effect produced by non-Newtonian fluid polishing. In this paper, the material removal rate and surface roughness are taken as the evaluation index. Taguchi method was used to optimize the four key parameters in the process of shear thickening and polishing of quartz wafer: the rotational speed of polishing fluid, the angle of workpiece inclination, the particle size and the mass fraction of abrasive particles. The optimal polishing parameters combination and the influence of main process parameters on the polishing effect are obtained, and the reliability of the optimized results is verified by experiments. For the material removal rate, the influence of the workpiece tilt angle is the most obvious, and the polishing fluid rotation speed is the second. Thirdly, the effect of abrasive particle mass fraction is the least. For surface roughness, the effect of polishing fluid speed is the most obvious, the workpiece tilting angle is the second, and the second is the abrasive particle mass fraction, the second is the abrasive particle mass fraction, the second is the abrasive particle mass fraction. The effect of particle size is the least. Through the analysis of average SNR response, The optimized parameters of material removal rate are as follows: 1: al _ 2O _ 2O _ (32) 500 #.With mass fraction of abrasive particles 18, rotation speed of polishing liquid 80 r / min, angle of workpiece tilting 15 擄, removal rate of quartz wafer material up to 12.25 渭 m / h; optimum surface roughness parameter of quartz wafer is composed of:% Al _ 2O _ 2O _ 35 000 #k and abrasive mass. The surface roughness of quartz wafer decreased from 300.08 nm to 4.26 nm after 1 h of polishing, with the mass fraction of 18, the rotational speed of the polishing liquid 80 rpm, the angle of workpiece tilting 15 擄, and the surface roughness of quartz wafer reduced from 300.08 nm to 4.26 nm after 1 hour polishing.
【作者單位】： 浙江工業(yè)大學超精密加工研究中心;金華出入境檢驗檢疫局;
【基金】：國家自然科學基金資助項目(51175166,51275476) 浙江省科技計劃公益資助項目(2013C31014)
【分類號】：O786;TQ127.2

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