本文關(guān)鍵詞： 摻氮N 型納米金剛石薄膜 微波場發(fā)射 微波等離子體化學(xué)氣相沉積　出處：《西南科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：金剛石由于其優(yōu)異的物理化學(xué)性能引起人們的關(guān)注,特別是CVD金剛石薄膜技術(shù)的發(fā)展,通過對金剛石薄膜進(jìn)行不同雜質(zhì)的摻雜,獲得所需要特定性能的金剛石薄膜,在電子束源以及半導(dǎo)體領(lǐng)域有著非常重要的意義。采用微波等離子體化學(xué)氣象沉積(MPCVD)方法在單晶Si基底上制備不同生長條件的摻氮N型納米金剛石(NCD)薄膜,通過場發(fā)射電子顯微鏡(FESEM)、激光Raman光譜、原子力探針顯微鏡(AFM)和X射線衍射儀分析了所制備樣品的表面形貌和組成結(jié)構(gòu),詳細(xì)研究了不同反應(yīng)氣壓、溫度、Ar含量和CH4濃度對摻氮NCD薄膜性能的影響,結(jié)果表明:在Ar-CH4-C3H6N6的體系下,隨著反應(yīng)氣壓和CH4濃度的增加,薄膜的顆粒尺寸和表面粗糙度均先減小后增加,而薄膜中SP2相含量則呈增加趨勢;隨著反應(yīng)溫度的增加,薄膜中的顆粒尺寸減小,而薄膜中SP2相則先減小,后增加;隨著Ar含量的增加,顆粒尺寸和薄膜中金剛石相含量均減少。并在脈寬3.2μs、峰值場強極值為85 V/μm的微波場以及10-5 Pa真空環(huán)境條件下測試分析不同CH4含量制備的摻氮NCD薄膜樣品的電場發(fā)射特性,并比較了微波場發(fā)射前后的SEM和Raman的變化,結(jié)果表明:低CH4濃度下制備的摻氮NCD薄膜具有較好的場發(fā)射性能,而且所有樣品的F-N曲線均為直線,可知這些樣品的發(fā)射遵循經(jīng)典的場致發(fā)射電子特征規(guī)律,在67.7 V/?m電場下,最高發(fā)射電流密度為144.8 mA/cm2;比較場發(fā)射前后的薄膜表面形貌與物相組成,均變化較小,可知所制備的摻氮NCD薄膜在微波場發(fā)射下具有很好的穩(wěn)定性。
[Abstract]:Diamond has attracted much attention because of its excellent physical and chemical properties. Especially with the development of CVD diamond film technology, diamond films are doped with different impurities. The diamond films with specific properties are obtained. It is of great significance in the field of electron beam sources and semiconductors. Microwave plasma chemical meteorological deposition (MPCVD). Methods Nitrogen-doped N-type nanocrystalline diamond (NCD) films were prepared on single crystal Si substrates under different growth conditions. The surface morphology and structure of the samples were analyzed by field emission electron microscopy (FESE), laser Raman spectroscopy, atomic force probe microscopy (AFM) and X-ray diffractometer (XRD). The effects of different reaction pressure, temperature, ar content and CH4 concentration on the properties of nitrogen-doped NCD films were studied in detail. The results showed that: in the system of Ar-CH4-C3H6N6. With the increase of reaction pressure and CH4 concentration, the particle size and surface roughness of the film decrease first and then increase, while the content of SP2 phase in the film increases. With the increase of the reaction temperature, the particle size in the film decreases, while the SP2 phase in the film decreases first and then increases. With the increase of ar content, both the particle size and the diamond phase content in the film decrease, and the pulse width is 3.2 渭 s. The electric field emission characteristics of nitrogen-doped NCD thin films prepared with different CH4 content were measured and analyzed under microwave field with peak field intensity of 85 V / 渭 m and vacuum environment of 10 ~ (-5) Pa. The changes of SEM and Raman before and after microwave field emission were compared. The results showed that the nitrogen-doped NCD films prepared at low CH4 concentration had better field emission properties. Moreover, the F-N curves of all samples are straight line. The emission of these samples follows the classical field emission electron characteristic law, at 67.7 V /? Under m electric field, the maximum emission current density is 144.8 Ma / cm ~ 2; Compared with the surface morphology and phase composition of the films before and after field emission, the results show that the nitrogen-doped NCD films have good stability under microwave field emission.
【學(xué)位授予單位】：西南科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ163;TB383.2

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本文編號：1489392