本文關(guān)鍵詞： 過渡金屬二硫化物 熱蒸發(fā)法 二維納米結(jié)構(gòu) 拓?fù)浣^緣體 光電性能　出處：《湘潭大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著石墨烯的發(fā)現(xiàn)以及迅速發(fā)展,類石墨烯材料逐漸被越來越多的人研究和關(guān)注。其中過渡金屬二硫化物以其可調(diào)帶隙結(jié)構(gòu)以及優(yōu)異的光電性能,特別是在半導(dǎo)體領(lǐng)域中的高的載流子遷移率以及大的開關(guān)電流比,使得這類材料逐漸成為一種熱門的研究材料。而拓?fù)浣^緣體,它的體態(tài)是絕緣的,表面態(tài)卻呈現(xiàn)出金屬性,這源于它較強(qiáng)的自旋軌道耦合作用。拓?fù)浣^緣體的探究和發(fā)展將會推動(dòng)計(jì)算機(jī)領(lǐng)域的迅速發(fā)展。本文對過渡金屬二硫化物和拓?fù)浣^緣體納米結(jié)構(gòu)的制備、表征進(jìn)行了系統(tǒng)研究,探索了過渡金屬二硫化物的光電性能和拓?fù)浣^緣體的光響應(yīng)特性,并對獲得的實(shí)驗(yàn)結(jié)果進(jìn)行了系統(tǒng)分析。主要內(nèi)容如下:1.采用熱蒸發(fā)法在不同基底(二氧化硅和藍(lán)寶石)上成功地制備出過渡金屬二硫化物(WS2、WSe2)的納米片和大尺寸納米薄膜結(jié)構(gòu)。實(shí)驗(yàn)結(jié)果表明,過渡金屬二硫化物在藍(lán)寶石基底上更容易獲得優(yōu)異的納米結(jié)構(gòu),這跟藍(lán)寶石基底在實(shí)驗(yàn)過程中形成的結(jié)構(gòu)有關(guān)。實(shí)驗(yàn)得到的納米結(jié)構(gòu)的尺寸非常大,達(dá)到了微米甚至是厘米級別。同時(shí)我們對其生長演化機(jī)制也進(jìn)行了探究。采用開爾文力顯微鏡、拉曼光譜、掃描電子顯微鏡等表征手段對制備的樣品進(jìn)行了系統(tǒng)的研究。過渡金屬二硫化物作為新型半導(dǎo)體光電材料,探究其光電性能具有非常重要的現(xiàn)實(shí)意義。同時(shí)我們對得到的樣品的表面電勢分布以及光致發(fā)光性能進(jìn)行了研究,并嘗試解釋其產(chǎn)生相應(yīng)現(xiàn)象的原因。2.首先采用熱蒸發(fā)法成功制備出測試需要的拓?fù)浣^緣體納米材料。然后利用自制三電極光電測試系統(tǒng)探究其光響應(yīng)性能。通過對比Bi2Se3塊體和Bi2Se3納米片在模擬太陽光下的光響應(yīng)數(shù)據(jù),確定Bi2Se3納米片具有更好的導(dǎo)電性、光響應(yīng)循環(huán)穩(wěn)定性以及大的電流差。利用單色光源對Bi2Se3納米片的光響應(yīng)性能進(jìn)行光響應(yīng)的重復(fù)實(shí)驗(yàn)。發(fā)現(xiàn)其在光源波長為455 nm時(shí),具有最高的靈敏性,此時(shí)暗電流比在模擬太陽光下的暗電流低。在波長為655 nm的光源下時(shí),其靈敏性高于模擬太陽光條件下的靈敏性,而低于波長455 nm時(shí)的靈敏性,但是此時(shí)的暗電流在測試的數(shù)據(jù)中最小。同時(shí),我們也測試了Bi2Te3的光響應(yīng)特性。實(shí)驗(yàn)結(jié)果表明,拓?fù)浣^緣體納米結(jié)構(gòu)在光電傳感器領(lǐng)域具有一定的潛在應(yīng)用價(jià)值。
[Abstract]:With the discovery and rapid development of graphene, graphene like materials have been studied and paid more and more attention. Among them, transition metal disulfide is characterized by its tunable band gap structure and excellent optoelectronic properties. Especially in the field of semiconductor, the high carrier mobility and the large switching current ratio make these materials become a hot research material, and the topology insulator, its body state is insulating. The surface state, however, presents a gold attribute. This is due to its strong spin-orbit coupling. The exploration and development of topological insulators will promote the rapid development of the computer field. In this paper, transition metal disulfide and topological insulator nanostructures are prepared. The photoelectric properties of transition metal disulfide and the photoresponse characteristics of topological insulators were investigated. The experimental results are analyzed systematically. The main contents are as follows: 1. The transition metal disulfide (TMS) WS2 was successfully prepared on different substrates (silicon dioxide and sapphire) by thermal evaporation method. The experimental results show that transition metal disulfide is easier to obtain excellent nanostructures on sapphire substrates. This is related to the structure of the sapphire substrate formed during the experiment. The size of the nanostructures obtained is very large. At the same time, we also studied the mechanism of its growth and evolution. Using Kelvin force microscope, Raman spectroscopy. The transition metal disulfide (TME) as a new type of semiconductor optoelectronic material was systematically studied by means of scanning electron microscope (SEM). It is of great practical significance to explore the photoelectric properties of the samples. At the same time, we have studied the surface potential distribution and photoluminescence properties of the samples. First, the topological insulator nanomaterials were successfully prepared by thermal evaporation method, and then the photoresponse properties of these materials were investigated by using a self-made three-electrode photoelectric test system. The photoresponse data of Bi2Se3 block and Bi2Se3 nanochip under simulated solar light were compared. It is confirmed that Bi2Se3 nanoparticles have better electrical conductivity. Optical response cycle stability and large current difference. The photoresponse of Bi2Se3 nanoparticles was repeated with monochromatic light source. It was found that the light source wavelength was 455nm. It has the highest sensitivity, the dark current is lower than the dark current in the simulated solar light, and the sensitivity is higher at the wavelength of 655 nm than that under the simulated solar light. The sensitivity is lower than the wavelength of 455nm, but the dark current is the smallest in the measured data. At the same time, we have also tested the light response characteristics of Bi2Te3. The experimental results show that. Topological insulator nanostructures have potential application value in the field of optoelectronic sensors.
【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ127.11

【共引文獻(xiàn)】

相關(guān)期刊論文 前1條

1 石夢燕;張曉鳳;王孝英;王文珠;蔣曉青;;直接液相剝離法制備無缺陷石墨烯[J];南京師范大學(xué)學(xué)報(bào)(工程技術(shù)版);2014年02期

相關(guān)博士學(xué)位論文 前2條

1 王睿;基于納米半導(dǎo)體構(gòu)建的電化學(xué)和光電化學(xué)傳感器用于環(huán)境污染物監(jiān)測研究[D];華中科技大學(xué);2014年

2 魏偉;石墨烯基雜化材料的結(jié)構(gòu)調(diào)控及其儲能機(jī)制研究[D];天津大學(xué);2014年

相關(guān)碩士學(xué)位論文 前6條

1 李擁虎;氧化石墨烯/殼聚糖復(fù)合材料的制備及其載藥性能研究[D];西南交通大學(xué);2013年

2 緱浩;石墨烯/氨基酸手性復(fù)合材料的合成及性能研究[D];西北師范大學(xué);2013年

3 李先業(yè);聚乳酸基復(fù)合材料的制備及其性能研究[D];南京理工大學(xué);2014年

4 孫光偉;基于石墨烯的聚苯乙烯復(fù)合材料的制備與性能研究[D];青島科技大學(xué);2013年

5 楊子平;石墨烯納米復(fù)合材料的制備及性能研究[D];復(fù)旦大學(xué);2013年

6 宋亞偉;光響應(yīng)性螺吡喃—傒二酰亞胺/石墨烯復(fù)合物的制備與表征[D];湖南大學(xué);2014年

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本文編號：1484887