【摘要】：平帶電位(E_(fb))是半導(dǎo)體/電解質(zhì)溶液體系的重要概念,是半導(dǎo)體電極在平帶狀態(tài)時(shí)的電極電位,它是半導(dǎo)體電極特有的可以實(shí)驗(yàn)測(cè)定的物理量。利用Mott-Schottky曲線以及光電化學(xué)等方法可以測(cè)定平帶電位,判斷半導(dǎo)體的類型以及估算半導(dǎo)體的載流子濃度,其數(shù)值可用于推測(cè)半導(dǎo)體的能級(jí)結(jié)構(gòu),確定半導(dǎo)體材料的價(jià)帶或?qū)芗?jí)位置。這對(duì)于與太陽(yáng)能開發(fā)利用相關(guān)的半導(dǎo)體光催化和光電化學(xué)研究都是非常重要的。本文分析了半導(dǎo)體電極的能帶彎曲及影響因素,首次提出半導(dǎo)體界面層內(nèi)費(fèi)米能級(jí)彎曲,闡明半導(dǎo)體電極平帶電位的物理意義及其測(cè)定方法,以幫助初學(xué)者理解和應(yīng)用平帶電位。
[Abstract]:Flat band potential (E _ (fb) is an important concept of semiconductor / electrolyte solution system. It is the electrode potential of semiconductor electrode in flat band state. It is a unique physical quantity of semiconductor electrode which can be measured by experiment. The flat band potential can be measured by Mott-Schottky curve and photochemistry, the type of semiconductor can be judged and the carrier concentration of semiconductor can be estimated. The numerical value can be used to speculate the energy level structure of semiconductor. The valence band or conduction band energy level position of semiconductor material is determined. This is very important for semiconductor photocatalysis and photochemistry related to solar energy development and utilization. In this paper, the energy band bending of semiconductor electrode and its influencing factors are analyzed, and the Fermi energy level bending in semiconductor interface layer is put forward for the first time. The physical meaning and determination method of flat band potential of semiconductor electrode are expounded. To help beginners understand and apply flat band potentials.
【作者單位】： 復(fù)旦大學(xué)材料科學(xué)系;
【基金】：國(guó)家自然科學(xué)基金項(xiàng)目(21273047) 復(fù)旦大學(xué)教學(xué)改革重點(diǎn)項(xiàng)目(2017ZD018)資助
【分類號(hào)】：O646

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本文編號(hào)：2496998