【摘要】：利用斜光刻技術(shù)替代傳統(tǒng)的直光刻技術(shù)在相同底面積的基礎(chǔ)上增大微陣列比表面積制備了高比表面積三維微陣列結(jié)構(gòu),。首先,利用MATLAB仿真對微陣列排布方式進行分析,確定最佳單個柱體寬度及陣列間距。實驗中,采用兩次甩膠法將SU-8光刻膠均勻旋涂在2寸硅基底上,甩膠轉(zhuǎn)速設(shè)為1500 r/min,旋涂時間設(shè)為35 s;分別置于65℃烘臺上保持20 min和95℃烘臺上保持70 min進行兩次前烘處理;隨后進行雙向斜曝光,微柱寬度為20μm,陣列間距為30μm,光刻角度為20°。最后,再通過高低溫后烘處理并顯影30 min成功制備出了結(jié)構(gòu)穩(wěn)定的"X"型三維微陣列結(jié)構(gòu)。
[Abstract]:The 3D microarray structure with high specific surface area was prepared by using oblique lithography instead of traditional direct lithography on the basis of increasing the specific surface area of microarray on the basis of the same bottom area. Firstly, the microarray arrangement is analyzed by MATLAB simulation, and the optimum single cylinder width and array spacing are determined. In the experiment, SU-8 photoresist was evenly coated on 2 inch silicon substrate by two times of gel rejection method, the rotating speed of the adhesive was set to 1500 r 路min, and the spinning time was set to 35 s. The drying table was kept at 65 鈩，

本文編號：2487086