【摘要】：高價(jià)離子導(dǎo)電固體電解質(zhì)由于與周圍離子的靜電引力大,電導(dǎo)率普遍偏低,對(duì)具有NASICON型結(jié)構(gòu)的高價(jià)離子導(dǎo)體材料進(jìn)行異種離子摻雜,改善晶體結(jié)構(gòu)和擴(kuò)展離子傳導(dǎo)通道,提高其燒結(jié)性能,是增加其離子電導(dǎo)率的有效途徑。將具有三維NASICON型結(jié)構(gòu)的三價(jià)Al3+離子導(dǎo)電固體電解質(zhì)中的P位分別用V、Mo、B三種元素進(jìn)行部分取代,利用高溫固相反應(yīng)法合成了固體電解質(zhì)(Al0.15Zr0.85)4/3.85Nb P3-x Vx O12(0.0≤x≤0.2)、(Al0.2Zr0.8)(4-x)/3.8Nb P3-x Mox O12(0.0≤x≤0.2)和(Al0.2Zr0.8)(4+2x)/3.8Nb P3-x Bx O12(0.0≤x≤0.2),利用X射線衍射技術(shù)(XRD)和掃描電子顯微鏡技術(shù)(SEM)對(duì)樣品的相組成及微觀形貌進(jìn)行表征,結(jié)果表明,制備的固體電解質(zhì)材料具有三維NASICON型結(jié)構(gòu),與未摻雜的固體電解質(zhì)相比,其晶粒連接緊密,致密性明顯增強(qiáng)。通過(guò)直流極化法測(cè)試表明Al3+是主要傳導(dǎo)離子,電子傳導(dǎo)可忽略不計(jì)。利用摻雜制得的固體電解質(zhì)電性能也得到了極大改善,固體電解質(zhì)(Al0.15Zr0.85)4/3.85Nb P3-x Vx O12(x=0.1)的電導(dǎo)率600℃下為2.32×10-3 S·cm-1,比未摻雜的(Al0.15Zr0.85)4/3.85Nb(PO4)3提高了將近一個(gè)數(shù)量級(jí)。與未摻雜的鋁離子導(dǎo)電固體電解質(zhì)(Al0.2Zr0.8)4/3.8Nb(PO4)3相比,(Al0.2Zr0.8)(4-x)/3.8Nb P3-x Mox O12(x=0.15)和(Al0.2Zr0.8)(4+2x)/3.8Nb P3-x Bx O12(x=0.1)導(dǎo)電活化能降低,提高了其反應(yīng)活性,600℃下的電導(dǎo)率分別提高了2.38和1.09倍。以(Al0.15Zr0.85)4/3.85Nb P2.9V0.1O12為固體電解質(zhì),Na NO3為敏感材料制備了NO2傳感器,150℃為最佳工作溫度,且響應(yīng)穩(wěn)定性高,抗干擾性能良好。另外,分別以(Al0.2Zr0.8)3.85/3.8Nb P2.85Mo0.15O12和(Al0.2Zr0.8)4.2/3.8Nb P2.9B0.1O12為固體電解質(zhì),鋁含量為2 wt%的鋅鋁合金為參比電極制備的鋁傳感器在500℃下的響應(yīng)信號(hào)較穩(wěn)定,且響應(yīng)迅速,其電位響應(yīng)值與Al含量的對(duì)數(shù)有良好的線性關(guān)系,符合能斯特方程。
[Abstract]:Due to the large electrostatic attraction between the high valence ion conductive solid electrolyte and the surrounding ions, the conductivity is generally low. The high valence ion conductor materials with NASICON structure are doped with different ions to improve the crystal structure and expand the ion conduction channel. Improving its sintering performance is an effective way to increase its ionic conductivity. The P sites in trivalent Al3 ionic conductive solid electrolytes with 3-D NASICON structure were partially replaced by V, Mo and B elements, respectively. Solid electrolyte (Al0.15Zr0.85) 4/3.85Nb P _ 3x Vx O _ 12 (0.0 鈮，

本文編號(hào)：2462798