【摘要】：早在20世紀(jì)80年代,人們就發(fā)現(xiàn)了CsI(Tl)晶體在光學(xué)領(lǐng)域應(yīng)用的優(yōu)點(diǎn)。隨著CsI(TI)應(yīng)用領(lǐng)域的不斷拓展,如何獲得優(yōu)良的表面質(zhì)量以滿足應(yīng)用的需要就顯得十分重要。但是由于CsI(TI)具有質(zhì)軟、易水解、對(duì)溫度和光變化敏感等特點(diǎn),這些特點(diǎn)對(duì)加工造成了一定的難度。傳統(tǒng)的加工方法是采用含有磨料的拋光液對(duì)材料表面進(jìn)行超精密加工。雖然傳統(tǒng)加工方式因?yàn)橛心チ洗嬖诘年P(guān)系而能夠產(chǎn)生較大的材料去除率。但是固體磨料普遍分散性差而且易于發(fā)生黏結(jié),會(huì)在表面產(chǎn)生劃痕和凹坑,使被加工表面的拋光質(zhì)量被惡化,降低材料的使用性能。因此在改進(jìn)原有CsI(TI)晶體超精密加工方法的同時(shí),也需要努力探索新的CsI(TI)晶體超精密加工技術(shù),以滿足實(shí)際應(yīng)用的需要。本文提出一種利用水解作用對(duì)CsI(TI)晶體進(jìn)行超精密加工的新技術(shù),即CsI(TI)晶體水解拋光技術(shù)。首先綜述了CsI(TI)晶體的傳統(tǒng)加工技術(shù)和化學(xué)機(jī)械拋光的發(fā)展現(xiàn)狀,在此基礎(chǔ)之上,根據(jù)CsI(TI)晶體的易水解性質(zhì),并借鑒化學(xué)機(jī)械拋光(CMP)中材料的去除機(jī)制,提出了CsI(TI)晶體水解拋光的新技術(shù)。然后,對(duì)水解拋光的拋光液成分和配比進(jìn)行了研究,得到了適合本加工技術(shù)的拋光液配方。通過CsI(TI)晶體水解拋光實(shí)驗(yàn),對(duì)拋光液水解作用的控制進(jìn)行了驗(yàn)證,并檢驗(yàn)了所研制拋光液的使用性能。同時(shí)研究了拋光時(shí)間、拋光盤轉(zhuǎn)數(shù)和拋光壓強(qiáng)等變量參數(shù)對(duì)CsI(TI)晶體水解拋光的材料去除率和表面粗糙度的影響,得到了較優(yōu)的工藝參數(shù)組合。最后,對(duì)CsI(TI)晶體進(jìn)行了傳統(tǒng)的無水解拋光實(shí)驗(yàn),選取了CeO2和SiO2兩種磨粒分別對(duì)CsI(TI)晶體進(jìn)行單因素實(shí)驗(yàn),研究了不同磨粒固含量、拋光盤轉(zhuǎn)數(shù)和拋光壓強(qiáng)等輸入變量對(duì)CsI(TI)晶體無水解拋光的材料去除率和表面粗糙度的影響,得到了較優(yōu)的工藝參數(shù)組合,并對(duì)無水解拋光和水解拋光后的表面形貌進(jìn)行了對(duì)比分析。證明了水解拋光的優(yōu)越性。
[Abstract]:In the early 1980s, the advantages of CsI (Tl) crystals were found in the optical field. With the development of the application field of CsI (TI), it is very important to get good surface quality to meet the needs of the application. However, CsI (TI) has the characteristics of soft, easy to hydrolyze, sensitive to temperature and light. The traditional processing method comprises the following steps of: carrying out ultra-precision processing on the surface of the material by using the polishing solution containing the abrasive. While the conventional processing method is capable of producing a large material removal rate due to the relationship of the abrasive present. But the solid abrasive is generally poor in dispersibility and is easy to adhere, and scratches and pits are generated on the surface, so that the polishing quality of the processed surface is deteriorated, and the service performance of the material is reduced. In order to meet the needs of practical application, the new CsI (TI) crystal superprecision machining technology is also needed to improve the ultra-precision machining method of the original CsI (TI) crystal. In this paper, a new technique for ultra-precision machining of CsI (TI) crystals by hydrolysis is proposed, that is, CsI (TI) crystal hydrolysis and polishing technology. In this paper, the traditional processing technology of CsI (TI) crystal and the development of chemical mechanical polishing are reviewed. On this basis, the new technology of CsI (TI) crystal hydrolysis and polishing is put forward based on the easy hydrolysis of CsI (TI) crystal and the removal mechanism of the material in chemical mechanical polishing (CMP). Then, the composition and the proportion of the polishing solution to be hydrolyzed and polished are researched, and a polishing solution formula suitable for the processing technology is obtained. The control of the hydrolysis of the polishing solution was verified by the crystal hydrolysis and polishing experiment of CsI (TI), and the service performance of the polishing solution was tested. The effects of the parameters such as the polishing time, the number of revolutions of the polishing disk and the polishing pressure on the removal rate and the surface roughness of the CsI (TI) crystal are studied. The optimum combination of process parameters is obtained. In the end, the conventional hydrolysis-free polishing experiment was carried out on the CsI (TI) crystal, and the single-factor experiment was carried out on the CsI (TI) crystal by using the two kinds of abrasive grains of CeO2 and SiO2 respectively, and the solid content of different abrasive grains was studied. The effects of the input variables such as the number of revolutions of the polishing disk and the polishing pressure on the removal rate and the surface roughness of the CsI (TI) crystal without the hydrolysis and polishing are affected, and a better combination of the process parameters is obtained, and the surface morphology after the no-hydrolysis polishing and the hydrolysis and polishing is compared and analyzed. And the advantages of the hydrolysis and polishing are proved.
【學(xué)位授予單位】：沈陽(yáng)理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O786

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