【摘要】：石墨烯材料自問世以來,一直處于學(xué)界研究的焦點(diǎn),在微電子器件領(lǐng)域,通過Si C襯底制備的近自由態(tài)石墨烯具有較大的應(yīng)用潛力。本文介紹了Si C熱解法制備石墨烯的優(yōu)勢(shì)與劣勢(shì),說明了近自由態(tài)石墨烯制備的原因。綜合闡述了目前制備近自由態(tài)石墨烯的常用方法,并對(duì)比了各種制備方法的特點(diǎn)。最后,概述了近自由態(tài)石墨烯的常用表征手段。
[Abstract]:Graphene materials have always been the focus of academic research since they came out. In the field of microelectronic devices, the near-free graphene prepared by Si C substrate has great application potential. This paper introduces the advantages and disadvantages of preparing graphene by Si C pyrolysis, and explains the reasons for the preparation of graphene in near free state. The common methods of preparing near free graphene are reviewed, and the characteristics of various preparation methods are compared. Finally, the common characterization methods of near free graphene are summarized.
【作者單位】： 山東大學(xué)晶體材料國(guó)家重點(diǎn)實(shí)驗(yàn)室;
【基金】：山東大學(xué)基本科研業(yè)務(wù)費(fèi)資助項(xiàng)目自然科學(xué)專項(xiàng)(2014QY005)
【分類號(hào)】：O613.71

【共引文獻(xiàn)】

相關(guān)期刊論文 前1條

1 李松榮;王愛國(guó);王龍;楊其;向章;曾瓊;曹q暑，

本文編號(hào)：2262321