本文選題：碳化硅 + 晶界　； 參考：《物理學報》2017年06期

【摘要】：SiC具有耐輻射、低感生放射性、耐高溫等特點,在先進核能系統(tǒng)中具有重要的應用.用1.5 MeV的Si離子在常溫下注入單晶六方SiC和多晶化學氣相沉積SiC,注量分別為1×10~(14)—2×10~(16)cm~(-2)和1×10~(15)—2×10~(16)cm~(-2),利用X射線衍射(XRD)儀和白光干涉儀測量材料的晶格常數和輻照腫脹隨著注量增大的變化規(guī)律.結果顯示:在1.5 MeV Si離子常溫輻照下,注量達到2×10~(15)cm~(-2)時,單晶六方SiC完全非晶化;注量在1×10~(15)—5×10~(15)cm~(-2),單晶六方SiC的輻照腫脹明顯高于多晶化學氣相沉積SiC的輻照腫脹;注量達到1×10~(16)cm~(-2)時,單晶六方SiC和多晶化學氣相沉積SiC的輻照腫脹達到飽和并趨于一致,腫脹結果表明常溫輻照環(huán)境下多晶化學氣相沉積SiC的非晶化閾值劑量大于單晶六方SiC.通過分析單晶六方SiC和多晶化學氣相沉積SiC常溫輻照腫脹差異的原因,研究了晶界對SiC材料非晶化腫脹規(guī)律的影響,并對XRD輻照腫脹測量方法的適用范圍進行了討論.
[Abstract]:SiC has the characteristics of radiation resistance, low induced radioactivity, high temperature resistance and so on. It has important applications in advanced nuclear energy systems. Using 1.5 MeV Si ions, single crystal six square SiC and polycrystalline chemical vapor deposition SiC are injected at normal temperature. The injection amount is 1 * 10~ (14) - 2 * 10~ (16) cm~ (-2) and 1 * 10~ (15) 2 x 10~ (16) cm~. The white light interferometer measured the lattice constant of the material and the variation of the irradiation swelling with the increase of injection. The results showed that when the injection amount reached 2 x 10~ (15) cm~ (-2) at 1.5 MeV Si ion temperature, the single crystal six square SiC was completely non crystallized; the injection amount was 1 * 10~ (15) - 5 * 10~ (15) cm~ (-2), and the irradiated swelling of the single crystal six party SiC was obviously higher than that of polycrystalline chemistry When the vapor deposition of SiC is irradiated and the injection amount reaches 1 * 10~ (16) cm~ (-2), the radiation swelling of the single crystal six square SiC and polycrystalline chemical vapor deposition SiC is saturated and tends to be consistent. The swelling results show that the amorphous threshold value of the polycrystalline chemical vapor deposition of SiC under ambient temperature irradiation is greater than that of the single crystal six square SiC. by analyzing the SiC and the more of the six square crystals of the single crystal. The reason of the difference in the swelling of crystal chemical vapor deposition (SiC) at normal temperature was studied. The effect of grain boundary on the non crystalline swelling of SiC materials was studied, and the scope of application of the measurement method of XRD irradiation swelling was discussed.
【作者單位】： 西安交通大學核科學與技術學院;
【基金】：國家自然科學基金(批準號:11405124) 國家教育部博士點專項基金(批準號:20130201120065) 陜西省自然科學基礎研究計劃(批準號:2015JQ1030)資助的課題~~
【分類號】：O613.72;O74

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