本文選題：二維原子晶體 + 掃描透射電子顯微學(xué)�。� 參考：《物理學(xué)報(bào)》2017年21期

【摘要】：二維原子晶體材料,如石墨烯和過渡金屬硫族化合物等,具有不同于其塊體的獨(dú)特性能,有望在二維半導(dǎo)體器件中得到廣泛應(yīng)用.晶體中的結(jié)構(gòu)缺陷對材料的物理化學(xué)性能有直接的影響,因此研究結(jié)構(gòu)缺陷和局域物性之間的關(guān)聯(lián)是當(dāng)前二維原子晶體研究中的重要內(nèi)容,需要高空間分辨率的結(jié)構(gòu)研究手段.由于絕大部分二維原子晶體在高能量高劑量的電子束輻照下容易發(fā)生結(jié)構(gòu)損傷,利用電子顯微方法對二維原子晶體缺陷的研究面臨諸多挑戰(zhàn).低電壓球差校正掃描透射電子顯微(STEM)技術(shù)的發(fā)展,一個(gè)主要目標(biāo)就是希望在不損傷結(jié)構(gòu)的前提下對二維原子晶體的本征結(jié)構(gòu)缺陷進(jìn)行研究.在STEM下,多種不同的信號能夠被同步采集,包括原子序數(shù)襯度高分辨像和電子能量損失譜等,是表征二維原子晶體缺陷的有力工具,不但能對材料的本征結(jié)構(gòu)進(jìn)行單原子尺度的成像和能譜分析,還能記錄材料結(jié)構(gòu)的動態(tài)變化.通過調(diào)節(jié)電子束加速電壓和電子輻照劑量,掃描透射電子顯微鏡也可以作為電子刻蝕二維原子晶體材料的平臺,用于加工新型納米結(jié)構(gòu)以及探索新型二維原子晶體的原位制備.本綜述主要以本課題組在石墨烯和二維過渡金屬硫族化合物體系的研究為例,介紹低電壓掃描透射電子顯微學(xué)在二維原子晶體材料研究中的實(shí)際應(yīng)用.
[Abstract]:Two-dimensional atomic crystal materials, such as graphene and transition metal sulfur compounds, are expected to be widely used in two-dimensional semiconductor devices due to their unique properties different from their bulk. The structural defects in crystals have a direct impact on the physical and chemical properties of the materials. Therefore, the study of the correlation between the structural defects and the local physical properties is an important part of the current two-dimensional atomic crystal research, which requires a high spatial resolution of the structural research methods. Because most two-dimensional atomic crystals are vulnerable to structural damage under high energy and high dose electron beam irradiation, the study of two-dimensional atomic crystal defects by electron microscopy is faced with many challenges. With the development of low-voltage spherical aberration correction scanning transmission electron microscopy (STEMEM), one of the main goals is to study the intrinsic structural defects of two-dimensional atomic crystals without damaging the structure. Under STEM, many different signals can be collected synchronously, including atomic number contrast high resolution image and electron energy loss spectrum, which is a powerful tool to characterize the defects of two-dimensional atomic crystal. Not only can the intrinsic structure of the material be imaged on a single atomic scale and the energy spectrum can be analyzed, but also the dynamic changes of the material structure can be recorded. By adjusting the electron beam acceleration voltage and the dose of electron irradiation, the scanning transmission electron microscope can also be used as a platform for electron etching of two-dimensional atomic crystal materials, for processing new nanostructures and for exploring the in-situ fabrication of new two-dimensional atomic crystals. In this review, the practical application of low voltage scanning transmission electron microscopy in the study of two-dimensional atomic crystal materials is introduced, taking the study of graphene and 2-D transition metal sulfur compounds as examples.
【作者單位】： 中國科學(xué)院大學(xué)物理科學(xué)學(xué)院;中國科學(xué)院大學(xué)中國科學(xué)院真空物理重點(diǎn)實(shí)驗(yàn)室;
【基金】：國家自然科學(xué)基金(批準(zhǔn)號:51622211) 中國科學(xué)院率先行動“百人計(jì)劃”資助的課題~~
【分類號】：O73;TN16

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