本文關(guān)鍵詞： 鋁合金 陽(yáng)極氧化 電沉積 二氧化硅 熱控涂層　出處：《南昌航空大學(xué)》2016年碩士論文　論文類(lèi)型：學(xué)位論文

【摘要】：本文研究了鋁合金陽(yáng)極氧化以及電沉積二氧化硅制備熱控涂層。研究了鋁合金陽(yáng)極氧化工藝對(duì)光學(xué)性能αs/εH的影響,確定制備低比值αs/εH熱控涂層陽(yáng)極氧化工藝。在制備低比值αs/εH的陽(yáng)極氧化工藝基礎(chǔ)上,用兩種方法制備熱控涂層。第一種利用復(fù)合鹽封孔制備陽(yáng)極氧化膜熱控涂層,用正交實(shí)驗(yàn)研究制備低比值αs/εH的復(fù)合鹽封孔的熱控涂層工藝,同時(shí)比較復(fù)合鹽封孔、鎳鹽封孔和沸水封孔的耐蝕性。第二種則是電沉積二氧化硅制備熱控涂層,用動(dòng)電位極化曲線研究了鋁合金氧化膜表面電沉積二氧化硅工藝,并且利用Box-Behnken實(shí)驗(yàn)優(yōu)化制備低比值αs/εH熱控涂層的工藝,同時(shí)進(jìn)行腐蝕加速試驗(yàn)研究二氧化硅熱控涂層的耐蝕性。研究表明制備低比值的αs/εH熱控涂層的氧化最佳工藝為:電流密度1.0A/dm2,電解液溫度18℃,氧化時(shí)間30 min,氧化膜表面的粗糙度為0.58,此種工藝制備出的氧化膜的αs/εH比值最小為0.164。制備低比值αs/εH的復(fù)合鹽封孔的熱控涂層工藝:Ca2+濃度為1 g/L,Mg2+濃度為2.0 g/L,絡(luò)合劑濃度為12 g/L,表面活性劑濃度為0.6 g/L,封孔溫度為85℃,封孔時(shí)間為35 min,此工藝制備的熱控涂層的αs/εH比值達(dá)到最低為0.132。電化學(xué)分析得出復(fù)合鹽封孔的效果要明顯好于鎳鹽封孔和沸水封孔,且封孔可以改變氧化膜的αs/εH比值。復(fù)合鹽封孔的氧化膜表面均勻,其αs/εH比值最小,鎳鹽封孔降低了氧化膜的孔隙率,沸水封孔的氧化膜表面呈網(wǎng)狀結(jié)構(gòu),不利于制備低比值的αs/εH熱控涂層。通過(guò)動(dòng)電位極化曲線研究了電沉積二氧化硅工藝,同時(shí)利用響應(yīng)面軟件Design-Expert優(yōu)化制備熱控涂層的工藝。通過(guò)響應(yīng)面分析得到了制備熱控涂層的最佳條件:電壓4.7 v,pH=3.2,TEOS體積0.19 L,乙醇體積0.6 L,所得的二氧化硅熱控涂層的αs/εH比值最小為0.108。腐蝕加速試驗(yàn)表明二氧化硅熱控涂層能夠阻止腐蝕介質(zhì)進(jìn)入氧化膜表面,有效的保護(hù)基體免受腐蝕。從耐蝕性和制備低比值的αs/εH熱控涂層分析可知:電沉積二氧化硅涂層的耐蝕性?xún)?yōu)于復(fù)合鹽封孔制備的熱控涂層,且電沉積二氧化硅熱控涂層的αs/εH比值最小為0.108。
[Abstract]:In this paper, the anodic oxidation of aluminum alloy and the preparation of thermal control coating by electrodeposition of silicon dioxide were studied. The effect of anodic oxidation process on the optical properties of 偽 s / 蔚 H was studied. The anodizing process of low ratio 偽 s / 蔚 H thermal control coating was determined, and the anodic oxidation process of low ratio 偽 s / 蔚 H was prepared. The thermal control coating was prepared by two methods. Firstly, the thermal control coating of anodic oxide film was prepared by using compound salt to seal holes, and the thermal control coating with low ratio of 偽 s / 蔚 H was prepared by orthogonal experiment. At the same time, the corrosion resistance of composite salt sealing, nickel salt sealing and boiling water sealing was compared. The second was electrodeposition of silicon dioxide to prepare thermal control coating. The electrodeposition process of silicon dioxide on the surface of aluminum alloy oxide film was studied by potentiodynamic polarization curve, and the process of preparing low ratio 偽 s / 蔚 H thermal control coating was optimized by Box-Behnken experiment. At the same time, the corrosion resistance of SiO2 thermal control coating was studied by accelerated corrosion test. The results showed that the best oxidation process of 偽 s / 蔚 H thermal control coating with low ratio was as follows: current density 1.0 A / dm2. The surface roughness of the oxide film was 0.58 when the electrolyte temperature was 18 鈩，

本文編號(hào)：1451507