本文關(guān)鍵詞：X射線衍射法測(cè)量藍(lán)寶石單晶殘余應(yīng)力的研究　出處：《哈爾濱工業(yè)大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 藍(lán)寶石單晶 殘余應(yīng)力 X射線衍射 多重線性回歸方法

【摘要】：藍(lán)寶石單晶具有特殊的晶體結(jié)構(gòu),決定其具備優(yōu)異的力學(xué)、光學(xué)和化學(xué)等性能,廣泛應(yīng)用在軍事和民用領(lǐng)域。但在藍(lán)寶石單晶的生長(zhǎng)、加工和使用過程中,產(chǎn)生的殘余應(yīng)力會(huì)引入微裂紋、位錯(cuò)等缺陷,制約了其使用性能。特別是作為光學(xué)窗口材料,在振動(dòng)環(huán)境下,使材料發(fā)生低應(yīng)力脆性斷裂,導(dǎo)致災(zāi)難性的后果。因此,開展藍(lán)寶石單晶殘余應(yīng)力的研究,具有十分重要的意義。目前,X射線衍射法是測(cè)量單晶材料殘余應(yīng)力的主要方法,具有無損、快捷、高精度等優(yōu)點(diǎn)。本文選擇用L-XRD應(yīng)力衍射儀測(cè)量的極圖計(jì)算藍(lán)寶石單晶的殘余應(yīng)力。探究和分析多重線性回歸方法測(cè)量藍(lán)寶石單晶殘余應(yīng)力的理論過程；通過測(cè)量單晶鐵和單晶硅的殘余應(yīng)力,驗(yàn)證多重線性回歸方法的正確性；通過誤差、方差分析晶面組數(shù)以及晶面族對(duì)測(cè)量結(jié)果的影響；用多重線性回歸法計(jì)算藍(lán)寶石單晶的殘余應(yīng)力。實(shí)驗(yàn)結(jié)果表明：多重線性回歸方法不需要知道材料無應(yīng)力下的點(diǎn)陣常數(shù)d0和布拉格衍射角2θ_0的精確值,避免d_0和2θ_0的不精確性帶來的誤差,提高該方法的精確性；L-XRD應(yīng)力衍射儀測(cè)量單晶鐵和單晶硅的殘余應(yīng)力數(shù)據(jù)與多重線性回歸方法計(jì)算數(shù)據(jù)在誤差范圍內(nèi)相符,原理推導(dǎo)正確；多重線性回歸方法測(cè)定單晶殘余應(yīng)力至少需要4個(gè)晶面組數(shù),當(dāng)晶面組數(shù)大于等于6時(shí),計(jì)算結(jié)果趨于穩(wěn)定。多重線性回歸方法計(jì)算藍(lán)寶石單晶的殘余應(yīng)力,{330}晶面族計(jì)算結(jié)果為σ_(11),=-241.7766MPa,σ_(12)=-1487.6718MPa,σ_(22)=-3394.2589MPa；{4010}計(jì)算結(jié)果為σ_(11)=-253.0348MPa,σ_(12)=-1439.0512MPa,σ_(22)=-3330.1074MPa,2θ_0=143.0012°。
[Abstract]:The sapphire crystal has special crystal structure, the excellent mechanical, optical and chemical properties, are widely used in military and civil fields. But in the sapphire crystal growth, processing and use of the process, the residual stress will introduce micro cracks, defects such as dislocations, restricting its use especially performance. As the optical window materials in vibration environment, makes the material of low stress brittle fracture, lead to disastrous consequences. Therefore, to carry out the research of sapphire crystal and residual stress, has very important significance. At present, X ray diffraction method is the main method for measuring residual stress of single crystal material is nondestructive, fast. High precision. The residual calculation of sapphire crystal with L-XRD pole figure force diffraction measurements of the stress in this paper. Research and analysis of multiple linear regression method to measure the residual stress of the sapphire crystal theory Cheng; through measuring the residual stress of single crystal iron and silicon, verify the correctness of multiple linear regression method; the error analysis of variance effect of crystal surface and crystal plane group group number on the measurement results; the residual regression method to calculate the sapphire crystal with multiple linear stress. The experimental results show that the lattice constant of multiple linear d0 the regression method does not need to know the material stress and Prague diffraction angle 2 theta _0 the exact value of d_0 and avoid errors due to imprecise 2 0 _0, to improve the accuracy of the proposed method; L-XRD residual force diffraction measurements on single crystal silicon and iron stress data and multiple linear regression method the data are in the range of error, the principle is correct; Determination of stress requires at least 4 sets of single crystal crystal surface residual multiple linear regression method, when the plane number is greater than or equal to 6, the results of multiple lines tend to be stable. The residual calculation of single crystal sapphire regression method of the stress calculation results, {330} family of sigma _ (11), =-241.7766MPa (12) =-1487.6718MPa _, sigma sigma, _ (22) =-3394.2589MPa; {4010} results of sigma _ (11) =-253.0348MPa (12) =-1439.0512MPa _, sigma sigma, _ (22) =-3330.1074MPa 2, theta _0=143.0012 degrees.

【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：O733
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本文編號(hào)：1384956