本文關(guān)鍵詞： 鎘 硅 烤煙 鎘積累 鎘形態(tài)　出處：《貴州大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：本研究通過(guò)盆栽試驗(yàn)與土壤培養(yǎng)試驗(yàn)相結(jié)合的方式研究了硅對(duì)烤煙鎘吸收積累、植煙土壤鎘形態(tài)的變化規(guī)律。具體研究結(jié)果如下:1.鎘污染會(huì)抑制烤煙生長(zhǎng)。一定濃度的硅能促進(jìn)鎘污染下烤煙株高、莖圍、最大葉葉面積、鮮重的增加。這種促進(jìn)也與鎘濃度有關(guān),鎘污染濃度較低時(shí),硅對(duì)烤煙生長(zhǎng)有一定的促進(jìn)作用,鎘污染濃度較高時(shí),高硅濃度反而抑制烤煙生長(zhǎng)。2.鎘污染會(huì)使烤煙葉片中葉綠素a,葉綠素b,類胡蘿卜素的含量下降,丙二醛含量,SOD活性及可溶性蛋白含量增加,與前人研究結(jié)果基本一致。一定濃度的硅能緩解鎘污染對(duì)烤煙葉片的葉綠素、SOD、MDA及可溶性蛋白的脅迫影響。3.在Cd0處理中,在團(tuán)棵期及旺長(zhǎng)期,烤煙鎘含量為根葉莖,而在現(xiàn)蕾期和成熟期烤煙鎘含量為葉根莖。在Cd1處理中,在四個(gè)時(shí)期植株鎘含量為葉根莖。在Cd5處理中,在旺長(zhǎng)期烤煙鎘含量表現(xiàn)為葉根莖,在團(tuán)棵期,現(xiàn)蕾期及成熟期烤煙植株鎘含量表現(xiàn)為葉莖根。4.烤煙的生長(zhǎng)周期中鎘積累速率不同,鎘積累速率表現(xiàn)為旺長(zhǎng)期-現(xiàn)蕾期團(tuán)棵期-旺長(zhǎng)期現(xiàn)蕾期-成熟期,在Cd0,Cd1處理中,鎘積累量表現(xiàn)為葉根莖,而Cd5處理中鎘積累量表現(xiàn)為葉莖根,在現(xiàn)蕾期、成熟期葉片鎘積累基本表現(xiàn)為上部葉中部葉下部葉。加硅處理能夠降低烤煙總鎘積累量。5.在土壤--烤煙系統(tǒng)中鎘移動(dòng)指數(shù)表現(xiàn)為莖-葉移動(dòng)指數(shù)MIs-l土-根移動(dòng)指數(shù)MIs-r根-莖移動(dòng)指數(shù)MIr-s,鎘處理濃度越高,鎘越容易向烤煙葉部轉(zhuǎn)移。硅的添加使土壤--烤煙系統(tǒng)中鎘更多的截留在了根部,抑制了鎘向葉片的運(yùn)輸富集。6.在Cd0處理中,殘?jiān)鼞B(tài)鎘含量占全鎘90%左右,弱酸提取態(tài)鎘及可還原態(tài)鎘所占百分比較小;在Cd1、Cd5處理中,殘?jiān)鼞B(tài)鎘含量占全鎘百分比小于Cd0處理,弱酸提取態(tài)鎘及可還原態(tài)鎘所占百分比高于Cd0處理,且各形態(tài)鎘百分含量表現(xiàn)為弱酸提取態(tài)鎘可還原態(tài)鎘殘?jiān)鼞B(tài)鎘。在Cd1、Cd5處理中,和Si0處理相比,施硅處理的弱酸提取態(tài)鎘百分含量有所下降,下降程度與硅的添加量有關(guān)。7.在土壤培養(yǎng)試驗(yàn)中,Cd1處理中,硅的添加能降低土壤中有效鎘的含量,硅添加濃度越高,有效鎘含量越低,隨著土壤培養(yǎng)時(shí)間的增加,Cd1處理中的有效鎘呈先增加后降低的趨勢(shì)。Cd5處理中,硅的添加對(duì)土壤中有效鎘的含量無(wú)明顯降低的效果。土壤有效磷含量表現(xiàn)為Cd5處理Cd1處理,不同硅添加的濃度會(huì)使培養(yǎng)土壤的pH值含量增高。
[Abstract]:The absorption and accumulation of cadmium by silicon in flue-cured tobacco were studied by means of pot experiment and soil culture experiment. The specific results are as follows: 1. Cadmium pollution can inhibit the growth of flue-cured tobacco. A certain concentration of silicon can promote the plant height, stem circumference and maximum leaf area of flue-cured tobacco under cadmium pollution. The increase of fresh weight is also related to the concentration of cadmium. When the concentration of cadmium pollution is low, silicon can promote the growth of flue-cured tobacco to some extent, and when the concentration of cadmium pollution is higher, the growth of flue-cured tobacco can be promoted by silicon. On the contrary, high silicon concentration inhibited the growth of flue-cured tobacco. Cadmium pollution decreased the contents of chlorophyll a, chlorophyll b, carotenoid in flue-cured tobacco leaves, and increased the content of malondialdehyde (MDA) and soluble protein. The results were consistent with those of previous studies. A certain concentration of silicon could alleviate the stress of cadmium pollution on chlorophyll SODN MDA and soluble protein in flue-cured tobacco leaves. 3. In the Cd0 treatment, the cadmium content of flue-cured tobacco was root and leaf stem in root-leaf stem at rosette stage and peak stage. The cadmium content of flue-cured tobacco at budding stage and mature stage was leaf rhizome, in Cd1 treatment, CD content was leaf rhizome in four stages, in Cd5 treatment, CD content in flue-cured tobacco appeared as leaf rhizome in flourishing stage, and in rootstock stage in rosette stage. The CD content of flue-cured tobacco plants at budding stage and mature stage was as follows: leaf stem root. 4. The CD accumulation rate was different in the growth cycle of flue-cured tobacco. The CD accumulation rate of flue-cured tobacco was from rosette stage to budding stage to bud stage to mature stage, and it was treated with CD _ (0) CD _ (1). The accumulation of cadmium in leaves and stems was observed in leaves and stems, while in Cd5 treatment, the accumulation of cadmium in leaves, stems and roots, was observed at budding stage. The accumulation of cadmium in leaves at maturity stage was basically the lower leaves of middle leaves of upper leaves, and the total cadmium accumulation of flue-cured tobacco decreased by adding silicon. In the soil-flue-cured tobacco system, the cadmium movement index was shown as stem leaf movement index (MIs-l), soil-root movement index (MIs-l). The number of MIs-r root-stem movement index MIr-s, the higher the concentration of cadmium treatment, The more easily cadmium was transferred to the tobacco leaves, the more cadmium in the soil-flue-cured tobacco system was intercepted by adding silicon, which inhibited the transport and enrichment of cadmium to the leaves. In the Cd0 treatment, the residual cadmium content accounted for about 90% of the total cadmium. The percentage of residual cadmium in Cd0 treatment was lower than that in Cd0 treatment, and the percentage of weak acid extractable cadmium and reducible cadmium was higher than that of Cd0 treatment. In addition, the percentage of cadmium in each form was reduced to that of residual cadmium in the form of weak acid extractable cadmium. Compared with the treatment of Si0, the content of cadmium in the extracted form of weak acid was decreased in the treatment of CD _ (1) O _ (1) CD _ (5). In soil culture experiment, the addition of silicon can reduce the content of available cadmium in soil, the higher the concentration of silicon, the lower the content of available cadmium. With the increase of soil culture time, the available cadmium in the treatment of CD 1 increased first and then decreased. In the treatment of CD 5, the addition of silicon had no significant effect on the content of available cadmium in the soil. The content of available phosphorus in the soil showed that the content of available phosphorus in the soil was treated with Cd1 treatment with Cd5. The pH value of cultured soil was increased by adding different concentrations of silicon.
【學(xué)位授予單位】：貴州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：X53;S572

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本文編號(hào)：1540474