【摘要】：壓電陶瓷因其特有的機械能-電能相互轉化性能,在材料領域占有及其重要的地位。BCZT基無鉛壓電陶瓷因具有高的壓電性能,成為有望替代含鉛壓電陶瓷的新型壓電陶瓷材料。但BCZT基無鉛壓電陶瓷的居里溫度低、燒結溫度高等問題仍然沒有得到很大的改進。本文采用傳統(tǒng)固相燒結法制備BCZT基無鉛壓電陶瓷,分別研究了燒結溫度、La2O3、SnO2、Sm2O3摻雜對BCZT基無鉛壓電陶瓷的相結構、顯微結構以及電性能的影響。并進一步探討了SnO2、Sm2O3摻雜對BCZT無鉛壓電陶瓷的鐵電性能的影響。具體研究內(nèi)容如下:1.研究了燒結溫度對0.996 Ba0.85Ca0.15Zr0.1Ti0.9O3-0.004BiYO3陶瓷相結構、顯微結構以及電學性能的影響。結果發(fā)現(xiàn),當燒結溫度為1420 o C時,陶瓷具有致密的顯微結構,其電學性能:d33=130 pC/N,kp=18.2%,εr=4225,tanδ=1.95%。2.研究了La2O3摻雜對Ba0.85Ca0.15Zr0.1Ti0.9O3-0.8wt.%SiO2陶瓷相結構、顯微結構以及電學性能的影響。結果表明,當La2O3摻雜量為0.4 wt.%時,陶瓷樣品的晶粒均勻,氣孔率少,具有致密的晶粒結構。且在此時陶瓷具有最優(yōu)的電學性能:d33=153 pC/N,εr=4487,tanδ=2.44%。3.研究了SnO2摻雜對Ba0.85Ca0.15Zr0.1Ti0.9O3-0.2wt.%CuO2陶瓷相結構、電學性能以及介電弛豫行為的影響。結果表明,當SnO2摻雜量為0.3 wt.%時,陶瓷具有最優(yōu)的電學性能:d33=286 pC/N,kp=36.01%,εr=3118,tanδ=1.64%。對陶瓷樣品的介電性能研究結果表明,SnO2的摻雜使BCZT-Cu-x Sn陶瓷的居里溫度由86.1 o C降低到67.4 o C,且摻雜SnO2后的陶瓷其彌散系數(shù)γ=1.841,表現(xiàn)為典型的彌散相變特征與介電弛豫行為。4.研究了Sm2O3摻雜對(Ba0.85Ca0.15)(Zr0.1Ti0.893Mn0.005Y0.002)O3無鉛壓電陶瓷顯微結構、壓電性能、介電性能、擴散相變與介電弛豫行為的影響。結果表明,當x=0.3wt.%時,陶瓷具有最佳的綜合性能,即d33=171 pC/N,kp=20.45%,εr=5451,tanδ=2.03%。此外,對BCZTMY-x Sm陶瓷樣品的介電性能研究結果表明,Sm2O3摻雜使BCZTMY-x Sm陶瓷的居里溫度降低,且摻雜Sm2O3后的陶瓷,由于摻雜異性元素引起B(yǎng)CZT晶格的內(nèi)部在微小區(qū)域內(nèi)離子排列產(chǎn)生紊亂,出現(xiàn)極性微區(qū),呈現(xiàn)出典型的彌散相變特征與介電弛豫行為。
[Abstract]:BCZT-based lead-free piezoelectric ceramics are expected to replace lead based piezoelectric ceramics because of their high piezoelectric properties because of their unique mechanical and electrical energy interconversion properties and play an extremely important role in the field of materials. However, the low Curie temperature and high sintering temperature of BCZT based lead-free piezoelectric ceramics have not been greatly improved. In this paper, BCZT based lead-free piezoelectric ceramics were prepared by conventional solid-state sintering method. The effects of sintering temperature on the phase structure, microstructure and electrical properties of BCZT based lead-free piezoelectric ceramics were studied. The effect of Sno _ 2 O _ 2 O _ 2 O _ 3 doping on the ferroelectric properties of BCZT lead-free piezoelectric ceramics was also discussed. The specific contents of the study are as follows: 1. The effect of sintering temperature on the phase structure, microstructure and electrical properties of 0.996 Ba0.85Ca0.15Zr0.1Ti0.9O3-0.004BiYO3 ceramics was studied. The results show that the ceramics have dense microstructure at sintering temperature of 1420 o C, and the electrical properties of the ceramics are as follows: d33130pC / Nkp 18.2 and 蔚 rn 4225tan 未 1.95.2. The effects of La2O3 doping on the phase structure, microstructure and electrical properties of Ba0.85Ca0.15Zr0.1Ti0.9O3-0.8wt.%SiO2 ceramics were investigated. The results show that when the doping amount of La2O3 is 0.4 wt.%, the samples have uniform grain size, low porosity and compact grain structure. And at this time, the ceramic has the best electrical property: D33153pC / N, 蔚 rn 4487tan 未 2.444.3. The effects of SnO2 doping on the phase structure, electrical properties and dielectric relaxation behavior of Ba0.85Ca0.15Zr0.1Ti0.9O3-0.2wt.%CuO2 ceramics were investigated. The results show that when the doping amount of SnO2 is 0.3wt.%, the ceramic has the best electrical properties: D33286pC / NkpN 36.01 and 蔚 rn 3118tan 未 1.64. The dielectric properties of BCZT-Cu-x Sn ceramics were studied. The results showed that the Curie temperature of BCZT-Cu-x Sn ceramics was decreased from 86.1 OC to 67.4 OC, and the dispersion coefficient 緯 was 1.841 after doping with SnO2, which was characterized by typical diffusion phase transition and dielectric relaxation behavior. The effects of Sm2O3 doping on the microstructure, piezoelectric properties, dielectric properties, diffusion phase transition and dielectric relaxation behavior of (Ba0.85Ca0.15) (Zr0.1Ti0.893Mn0.005Y0.002) O3 lead-free piezoelectric ceramics were investigated. The results show that the ceramic has the best comprehensive properties when xG 0.3wt.%, that is, d33171pC / NkpN 20.45545, 蔚 rr5451tan 未 = 2.03. In addition, the dielectric properties of BCZTMY-x Sm ceramics have been studied. The results show that the Curie temperature of BCZTMY-x Sm ceramics decreases with doping of Sm _ 2O _ 3, and the doping of Sm2O3 leads to the disorder of ion arrangement in the small region of the BCZT lattice due to the heterogeneity of the doped elements. There are polar microregions, which show typical diffuse phase transition and dielectric relaxation behavior.
【學位授予單位】：貴州大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TQ174.1

【參考文獻】

相關期刊論文 前2條

1 姚喜,陳至立;弛豫型鐵電體[J];壓電與聲光;1984年06期

2 古訓玖;江向平;黎強;陳超;李小紅;涂娜;;Sr和Mn復合摻雜(Na_(0.8)K_(0.2))_0.5Bi_(0.5)TiO_3無鉛壓電陶瓷[J];中國陶瓷;2012年08期

，

本文編號：2186399