本文選題：故障診斷與預(yù)測(cè) + 電源電流��； 參考：《華南理工大學(xué)》2016年碩士論文

【摘要】：隨著現(xiàn)代信息技術(shù)的迅速發(fā)展,航空電子系統(tǒng)的復(fù)雜性、綜合性和智能性程度不斷提高,其研制、生產(chǎn)尤其是維護(hù)和保障的成本也越來(lái)越高。對(duì)于構(gòu)成航電系統(tǒng)各個(gè)模塊的芯片,其可靠性將直接影響整個(gè)系統(tǒng)的可靠性和安全性。對(duì)相關(guān)芯片進(jìn)行故障診斷與預(yù)測(cè),將有利于提高設(shè)備乃至整個(gè)系統(tǒng)的可靠性,同時(shí)降低航電系統(tǒng)的維護(hù)成本。對(duì)于芯片的檢測(cè),傳統(tǒng)的基于電壓的故障診斷方法在故障類型和故障覆蓋率方面存在缺點(diǎn)。實(shí)際上IC芯片是由很多晶體管組成的CMOS集成電路,而晶體管的退化會(huì)導(dǎo)致芯片電源電流的變化,因此我們采用基于旁路信號(hào)——電源電流的芯片故障檢測(cè)方法。電源電流包括靜態(tài)電流(IDDQ)和動(dòng)態(tài)電流(IDDT),對(duì)于芯片故障的診斷與預(yù)測(cè),可以轉(zhuǎn)換成對(duì)相關(guān)電源電流的檢測(cè)與分析。本文主要以芯片MP2380和HS7408為本次研究的實(shí)驗(yàn)對(duì)象,基于電源電流技術(shù),將其分成兩個(gè)方面進(jìn)行研究:(1)電磁干擾條件下的故障診斷與預(yù)測(cè),(2)與性能退化相關(guān)的故障診斷與預(yù)測(cè)。首先,將芯片MP2380單獨(dú)置于事先建立好的電磁環(huán)境中,用來(lái)模擬芯片在實(shí)際運(yùn)行過(guò)程中所受到的電磁干擾,對(duì)采集到的數(shù)據(jù)進(jìn)行FFT頻譜分析,通過(guò)幅頻特性曲線、相頻特性曲線和功率譜的對(duì)比,診斷芯片是否受到較大的外界干擾。然后,對(duì)正常芯片HS7408施加過(guò)電壓使其性能退化,用來(lái)模擬芯片出現(xiàn)故障后的性能退化,對(duì)正常芯片和性能退化芯片的相關(guān)數(shù)據(jù)進(jìn)行多種方法的處理,包括建立IDDT-IDDQ關(guān)系圖和FFT頻譜分析等方法,尤其是通過(guò)相頻特性曲線的變化規(guī)律來(lái)實(shí)現(xiàn)預(yù)警作用,最終完成對(duì)芯片的故障診斷與預(yù)測(cè)。
[Abstract]:With the rapid development of modern information technology, the complexity of the avionics system, the degree of comprehensiveness and intelligence are increasing, and the cost of production, especially maintenance and guarantee is becoming higher and higher. The reliability and safety of the whole system will directly affect the reliability and safety of the whole system for the modules of the avionics system. The fault diagnosis and prediction of the chip will help to improve the reliability of the equipment and even the whole system, and reduce the maintenance cost of the avionics system. For the detection of the chip, the traditional voltage based fault diagnosis method has shortcomings in the fault type and fault coverage. In fact, the IC chip is a CMOS integration composed of many transistors. The degradation of the transistors will lead to changes in the power current of the chip. Therefore, we adopt the method of chip fault detection based on the bypass signal power current. The power current includes the static current (IDDQ) and the dynamic current (IDDT). The diagnosis and prediction of the chip fault can be converted to the detection and analysis of the related power current. This paper mainly uses chip MP2380 and HS7408 as the experimental object of this study. Based on the power current technology, it is divided into two aspects: (1) fault diagnosis and prediction under electromagnetic interference, (2) fault diagnosis and prediction related to performance degradation. First, the chip MP2380 is placed in a pre established electromagnetic environment alone. To simulate the electromagnetic interference that the chip is subjected to in the actual operation, the FFT spectrum analysis of the collected data is carried out. Through the amplitude frequency characteristic curve, the phase frequency characteristic curve and the power spectrum, the diagnosis chip is subjected to large external interference. Then, the performance of the normal chip HS7408 is applied to the performance degradation of the chip, which is used to simulate the chip. The performance degradation after the failure occurs, and the related data of the normal chip and the performance degradation chip are processed in many ways, including the establishment of the IDDT-IDDQ diagram and the FFT spectrum analysis, especially through the change of the phase frequency characteristic curve to realize the early warning function, and finally the fault diagnosis and prediction of the chip are finished.

【學(xué)位授予單位】：華南理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：V267

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