簡(jiǎn)易化學(xué)水浴法制備SnO 2 /p-Si異質(zhì)結(jié)光電性能（英文）
發(fā)布時(shí)間：2021-07-07 17:53
通過一種簡(jiǎn)易化學(xué)水浴法將SnO2薄膜沉積在晶硅襯底上以制備n-SnO2/p-Si異質(zhì)結(jié)光電器件,這種自制的化學(xué)水浴裝置非常便宜和方便.采用XRD、SEM、XPS、PL、紫外-可見光分光光度計(jì)和霍爾效應(yīng)測(cè)試系統(tǒng)表征了SnO2薄膜的微結(jié)構(gòu)、光學(xué)和電學(xué)性能,對(duì)SnO2/p-Si異質(zhì)結(jié)的I-V曲線進(jìn)行測(cè)試并分析,獲得明顯的光電轉(zhuǎn)換特性.
【文章來源】：紅外與毫米波學(xué)報(bào). 2017,36(02)北大核心EISCICSCD
【文章頁數(shù)】：5 頁
【部分圖文】：
多晶SnO薄膜簡(jiǎn)易化學(xué)水浴制備系統(tǒng)
?Table1ElectricalparametersofSnO2film表1SnO2薄膜的電學(xué)性能參數(shù)Materialρ/(Ω·cm)n/(atom/cm3)μ/(cm2/V·s)SnO213．671．087×10174．2012．2I-VcharacteristicsThelinearcurrent-voltage(I-V)behaviorsbetweenthetwoAgelectrodesonthesurfaceoftheSnO2filmareshowninFig．3．Theinsetshowstheschematicoftheteststructure．Itindicatesagoodohmiccontact．Thedis-tancebetweenthetwoAgelectrodesonthefilmis1cm．Fig．3I-VcharacteristicsofAgohmiccontactstotheSnO2film圖3Ag電極與SnO2薄膜歐姆接觸的I-V曲線Figure4showsatypicalI-Vcharacteristicofthe141
紅外與毫米波學(xué)報(bào)36卷Fig．4I-VcurveoftheSnO2/p-Siheterojunctionindark圖4無光照SnO2/p-Si異質(zhì)結(jié)I-V曲線SnO2/p-Siheterojunctiondevicemeasuredindark．TheinsetinFig．4showstheheterojunctiondevicestructure．TheI-Vcurveofdeviceshowsarectifyingbehavior．Asmallleakagecurrentisobservedinthereversebiasre-gion，buttheforwardcurrentismuchhigherthanthere-versecurrent．AndthevalueofIF/IＲ(IFandIＲstandforforwardandreversecurrent，respectively)reachesto14.46．Ingeneral，theequationofthediodeisI=I0(eqVnkBT－1)，(2)wherenistheidealityfactorgivenby．Thevalueofnisfoundtobe7．4．WhilethevaluenofAZO/SiO2/p-SiSISheterojunctionpreparedbyＲFmagnetronsputteringis24．42［20］．TheresultsindicatethattheSnO2/p-Siheterojunctionhasgooddiodecharacteristics．Thep-nheterojunctionisformedattheinterfaceofthep-Siwaferandn-SnO2thinfilm．Fig．5I-VcharacteristicoftheSnO2/p-Siheterojunctionindarkandinlight(20Whalogenlamp)圖5SnO2/p-Si異質(zhì)結(jié)無光照及光照(20W鹵鎢燈)條件下I-V曲線ThephotoI-VcharacteristicoftheSnO2/p-Sihet-erojunctiondevicewasmeasuredunderilluminationbya20WhalogenlampasshowninFig．5．Typicalgoodrec-tifyingandphotoelectricbehaviorareobservedforthede-vice．Underthereversebias，thephotocurrentismuchlargerthanthedarkcurrent．Forexample，whenthere-versebiasis-5V，thedarkcurrentisonly7．33×10-5A，whilethephotocurrentreachesto1．44×10-3Aunderthe20Whalogenlampi
【參考文獻(xiàn)】：
期刊論文
[1]Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO2 thin films[J]. ZHAO Songqing1,2), ZHOU Yueliang1), WANG Shufang1), ZHAO Kun1,2), and HAN Peng1) 1) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China 2) Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China. Rare Metals. 2006(06)
本文編號(hào)：3270088
【文章來源】：紅外與毫米波學(xué)報(bào). 2017,36(02)北大核心EISCICSCD
【文章頁數(shù)】：5 頁
【部分圖文】：
多晶SnO薄膜簡(jiǎn)易化學(xué)水浴制備系統(tǒng)
?Table1ElectricalparametersofSnO2film表1SnO2薄膜的電學(xué)性能參數(shù)Materialρ/(Ω·cm)n/(atom/cm3)μ/(cm2/V·s)SnO213．671．087×10174．2012．2I-VcharacteristicsThelinearcurrent-voltage(I-V)behaviorsbetweenthetwoAgelectrodesonthesurfaceoftheSnO2filmareshowninFig．3．Theinsetshowstheschematicoftheteststructure．Itindicatesagoodohmiccontact．Thedis-tancebetweenthetwoAgelectrodesonthefilmis1cm．Fig．3I-VcharacteristicsofAgohmiccontactstotheSnO2film圖3Ag電極與SnO2薄膜歐姆接觸的I-V曲線Figure4showsatypicalI-Vcharacteristicofthe141
紅外與毫米波學(xué)報(bào)36卷Fig．4I-VcurveoftheSnO2/p-Siheterojunctionindark圖4無光照SnO2/p-Si異質(zhì)結(jié)I-V曲線SnO2/p-Siheterojunctiondevicemeasuredindark．TheinsetinFig．4showstheheterojunctiondevicestructure．TheI-Vcurveofdeviceshowsarectifyingbehavior．Asmallleakagecurrentisobservedinthereversebiasre-gion，buttheforwardcurrentismuchhigherthanthere-versecurrent．AndthevalueofIF/IＲ(IFandIＲstandforforwardandreversecurrent，respectively)reachesto14.46．Ingeneral，theequationofthediodeisI=I0(eqVnkBT－1)，(2)wherenistheidealityfactorgivenby．Thevalueofnisfoundtobe7．4．WhilethevaluenofAZO/SiO2/p-SiSISheterojunctionpreparedbyＲFmagnetronsputteringis24．42［20］．TheresultsindicatethattheSnO2/p-Siheterojunctionhasgooddiodecharacteristics．Thep-nheterojunctionisformedattheinterfaceofthep-Siwaferandn-SnO2thinfilm．Fig．5I-VcharacteristicoftheSnO2/p-Siheterojunctionindarkandinlight(20Whalogenlamp)圖5SnO2/p-Si異質(zhì)結(jié)無光照及光照(20W鹵鎢燈)條件下I-V曲線ThephotoI-VcharacteristicoftheSnO2/p-Sihet-erojunctiondevicewasmeasuredunderilluminationbya20WhalogenlampasshowninFig．5．Typicalgoodrec-tifyingandphotoelectricbehaviorareobservedforthede-vice．Underthereversebias，thephotocurrentismuchlargerthanthedarkcurrent．Forexample，whenthere-versebiasis-5V，thedarkcurrentisonly7．33×10-5A，whilethephotocurrentreachesto1．44×10-3Aunderthe20Whalogenlampi
【參考文獻(xiàn)】：
期刊論文
[1]Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO2 thin films[J]. ZHAO Songqing1,2), ZHOU Yueliang1), WANG Shufang1), ZHAO Kun1,2), and HAN Peng1) 1) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China 2) Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China. Rare Metals. 2006(06)
本文編號(hào)：3270088
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