【摘要】：結(jié)合SiO_2納米球掩模和反應(yīng)離子刻蝕技術(shù)制備了結(jié)構(gòu)呈周期性排列的多晶黑硅,利用低濃度的NaOH溶液去除由荷能離子撞擊所帶來的損傷層,優(yōu)化了多晶黑硅結(jié)構(gòu)。在多晶黑硅上用原子層沉積技術(shù)沉積一層Al_2O_3薄膜,并對樣品進行快速熱退火處理。結(jié)果表明,采用低濃度的NaOH溶液可以完全去除損傷層,在保持原有黑硅結(jié)構(gòu)的基礎(chǔ)上使表面結(jié)構(gòu)更加光滑;經(jīng)450℃快速熱退火后少子壽命達到29.34μs,表面復(fù)合速率為306cm·s-1,在可見光范圍內(nèi)平均反射率降至7.12%。
[Abstract]:Polycrystalline black silicon with periodic arrangement was prepared by SiO_2 nanosphere mask and reactive ion etch. The damage layer caused by energy ion impact was removed by using low concentration NaOH solution, and the structure of polycrystalline black silicon was optimized. A layer of Al_2O_3 thin films were deposited on polycrystalline black silicon by atomic layer deposition, and the samples were treated by rapid thermal annealing. The results show that the damage layer can be completely removed by using low concentration NaOH solution, and the surface structure is smoother on the basis of maintaining the original black silicon structure. After rapid thermal annealing at 450 鈩，

本文編號：2501372