【摘要】：為減少發(fā)光量子阱區(qū)的缺陷,緩解量子阱區(qū)的應(yīng)力,減小極化效應(yīng),提高量子阱結(jié)晶質(zhì)量,本文將n-AlInGaN作為非對稱電荷諧振隧道(CART)層即電子緩沖層中的量子勢壘應(yīng)用于GaN基LED中,以降低外量子效率衰減、提高發(fā)光效率。實(shí)驗(yàn)數(shù)據(jù)表明,在相同的正向偏壓下,相對于傳統(tǒng)的以GaN為CART量子勢壘的LED,采用n-AlInGaN作為勢壘層具有更大光輸出功率。原子力顯微鏡結(jié)果顯示,以n-AlInGaN為CART勢壘層能有效截止底層產(chǎn)生的線性位錯(cuò),降低量子阱區(qū)由于晶格失配造成的應(yīng)力。由于極化作用的減小,及電流擴(kuò)展效應(yīng),采用n-AlInGaN作為勢壘層樣品的外量子效率衰減減弱,器件的抗靜電能力也明顯增強(qiáng)。
[Abstract]:In order to reduce the defects in the luminous quantum well region, alleviate the stress in the quantum well region, reduce the polarization effect and improve the crystallization quality of the quantum well, n-AlInGaN is applied to the GaN based LED as the quantum barrier in the asymmetric charge resonant tunnel (CART) layer, that is, the electron buffer layer, in order to reduce the attenuation of the external quantum efficiency and improve the luminous efficiency. The experimental data show that the n-AlInGaN as the barrier layer has higher optical output power than the traditional LED, with GaN as the CART quantum barrier at the same forward bias. The results of atomic force microscope show that the linear dislocation produced by the bottom layer can be effectively cut off by using n-AlInGaN as the CART barrier layer, and the stress caused by lattice mismatch in the quantum well region can be reduced. Due to the decrease of polarization and current spread effect, the external quantum efficiency attenuation of n-AlInGaN as barrier layer sample is weakened, and the antistatic ability of the device is also obviously enhanced.
【作者單位】： 武漢產(chǎn)品質(zhì)量監(jiān)督檢驗(yàn)所;中南民族大學(xué)電子信息工程學(xué)院;
【分類號】：TN312.8
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本文編號：2501340