基于InGaAs MOSFET的E類功率放大器的研究
發(fā)布時(shí)間：2019-05-27 01:56
【摘要】：傳統(tǒng)硅基CMOS集成技術(shù)遵循摩爾定律通過不斷縮小特征尺寸來提高器件的工作速度、增加集成度以及降低成本,然而在進(jìn)入納米時(shí)代后開始面臨著來自技術(shù)層面和物理層面的雙重挑戰(zhàn)。InGaAs MOSFET因其優(yōu)越的電子遷移率,成為了下一代CMOS技術(shù)的研究熱點(diǎn)。本論文主要基于中科院微電子研究所器件及其制造工藝,以InGaAs MOSFET功率器件和射頻E類功率放大器的設(shè)計(jì)為中心,分別開展了以下研究工作:1.基于中科院微電子研究所工藝條件,完成了InGaAs MOSFET功率器件的設(shè)計(jì)及制作,同時(shí)完成了GaAs背孔工藝的研究,實(shí)現(xiàn)了完整的InGaAs MOSFET MMIC制作工藝流程。2.研究并完成了與In GaAs MOSFET工藝相兼容的50Ω/□的TaN薄膜電阻、Si3N4MIM電容和螺旋電感無源器件制備�；贛IM電容和螺旋電感的測(cè)試和MOM仿真數(shù)據(jù),完成了電容和電感的建模工作。同時(shí)本文還研究了Al2O3介質(zhì)的厚度與MIM電容的直流特性和射頻特性之間的相互關(guān)系,為Al2O3介質(zhì)MIM電容應(yīng)用于InGaAs MOSFET MMIC電路做了一定的基礎(chǔ)。3.完成了InGaAs MOSFET從小信號(hào)模型到大信號(hào)模型的建模流程。根據(jù)InGaAs MOSFET功率器件結(jié)構(gòu),建立小信號(hào)模型的等效拓?fù)浣Y(jié)構(gòu),提出小信號(hào)模型參數(shù)的直接提取方法。并利用IC-CAP建模軟件和ADS仿真軟件進(jìn)行InGaAs MOSFET的EEHEMT大信號(hào)模型提參建模以及后期擬合工作。4.利用InGaAs MOSFET功率器件大信號(hào)模型,完成了兩級(jí)射頻E類功率放大器的仿真設(shè)計(jì)。該功率放大器在4V漏極工作電壓,-1.2V柵極工作電壓下,工作頻率為2.45 GHz~2.55 GHz,P1dB30dBm,Gain27dB,PAE65%。
[Abstract]:The traditional silicon-based CMOS integration technology follows Moore's law to improve the working speed of the device, increase the integration and reduce the cost by continuously reducing the characteristic size. However, after entering the nano-era, Ingaas MOSFET has become the research focus of the next generation CMOS technology because of its superior electron mobility. This paper is mainly based on the device and its manufacturing process of the Institute of Microelectronics of the Chinese Academy of Sciences. Based on the design of InGaAs MOSFET power device and RF class E power amplifier, the following research work has been carried out: 1. Based on the process conditions of Institute of Microelectronics, Chinese Academy of Sciences, the design and fabrication of InGaAs MOSFET power device are completed, and the research of GaAs back hole process is completed, and the complete InGaAs MOSFET MMIC fabrication process is realized. 2. The fabrication of 50 惟 /-TaN thin film resistance, Si3N4MIM capacitance and spiral inductor passive devices compatible with In GaAs MOSFET process is studied and completed. Based on the test of MIM capacitance and spiral inductance and MOM simulation data, the modeling of capacitance and inductance is completed. At the same time, the relationship between the thickness of Al2O3 dielectric and the DC and RF characteristics of MIM capacitance is also studied, which makes a certain basis for the application of Al2O3 dielectric MIM capacitance in InGaAs MOSFET MMIC circuit. The modeling process of InGaAs MOSFET from small signal model to large signal model is completed. According to the structure of InGaAs MOSFET power device, the equivalent topological structure of small signal model is established, and the direct extraction method of small signal model parameters is proposed. IC-CAP modeling software and ADS simulation software are used to model and fit the EEHEMT large signal model of InGaAs MOSFET. 4. Based on the large signal model of InGaAs MOSFET power device, the simulation design of two-stage RF E power amplifier is completed. The power amplifier operates at a frequency of 2.45 GHz~2.55 GHz,P1dB30dBm,Gain27dB,PAE65%. at 4V drain voltage and-1.2V gate operating voltage.
【學(xué)位授予單位】：桂林電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75
本文編號(hào)：2485813
[Abstract]:The traditional silicon-based CMOS integration technology follows Moore's law to improve the working speed of the device, increase the integration and reduce the cost by continuously reducing the characteristic size. However, after entering the nano-era, Ingaas MOSFET has become the research focus of the next generation CMOS technology because of its superior electron mobility. This paper is mainly based on the device and its manufacturing process of the Institute of Microelectronics of the Chinese Academy of Sciences. Based on the design of InGaAs MOSFET power device and RF class E power amplifier, the following research work has been carried out: 1. Based on the process conditions of Institute of Microelectronics, Chinese Academy of Sciences, the design and fabrication of InGaAs MOSFET power device are completed, and the research of GaAs back hole process is completed, and the complete InGaAs MOSFET MMIC fabrication process is realized. 2. The fabrication of 50 惟 /-TaN thin film resistance, Si3N4MIM capacitance and spiral inductor passive devices compatible with In GaAs MOSFET process is studied and completed. Based on the test of MIM capacitance and spiral inductance and MOM simulation data, the modeling of capacitance and inductance is completed. At the same time, the relationship between the thickness of Al2O3 dielectric and the DC and RF characteristics of MIM capacitance is also studied, which makes a certain basis for the application of Al2O3 dielectric MIM capacitance in InGaAs MOSFET MMIC circuit. The modeling process of InGaAs MOSFET from small signal model to large signal model is completed. According to the structure of InGaAs MOSFET power device, the equivalent topological structure of small signal model is established, and the direct extraction method of small signal model parameters is proposed. IC-CAP modeling software and ADS simulation software are used to model and fit the EEHEMT large signal model of InGaAs MOSFET. 4. Based on the large signal model of InGaAs MOSFET power device, the simulation design of two-stage RF E power amplifier is completed. The power amplifier operates at a frequency of 2.45 GHz~2.55 GHz,P1dB30dBm,Gain27dB,PAE65%. at 4V drain voltage and-1.2V gate operating voltage.
【學(xué)位授予單位】：桂林電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 D.S.RAWAL;B.K.SEHGAL;R.MURALIDHARAN;H.K.MALIK;;Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl_2/BCl_3-Based Inductively Coupled Plasma[J];Plasma Science and Technology;2011年02期
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